Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SI4425BDY Search Results

    SF Impression Pixel

    SI4425BDY Price and Stock

    Vishay Siliconix SI4425BDY-T1-E3

    MOSFET P-CH 30V 8.8A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4425BDY-T1-E3 Digi-Reel 4,752 1
    • 1 $1.83
    • 10 $1.165
    • 100 $1.83
    • 1000 $0.56675
    • 10000 $0.56675
    		Buy Now
    SI4425BDY-T1-E3 Cut Tape 4,752 1
    • 1 $1.83
    • 10 $1.165
    • 100 $1.83
    • 1000 $0.56675
    • 10000 $0.56675
    		Buy Now
    SI4425BDY-T1-E3 Reel 2,500 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.46488
    		Buy Now
    RS SI4425BDY-T1-E3 Bulk 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.43
    		Get Quote
    Bristol Electronics SI4425BDY-T1-E3 60 3
    • 1 -
    • 10 $1.8
    • 100 $1.125
    • 1000 $1.125
    • 10000 $1.125
    		Buy Now
    Quest Components SI4425BDY-T1-E3 48
    • 1 $2.4
    • 10 $1.8
    • 100 $1.5
    • 1000 $1.5
    • 10000 $1.5
    		Buy Now

    Vishay Siliconix SI4425BDY-T1-GE3

    MOSFET P-CH 30V 8.8A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4425BDY-T1-GE3 Digi-Reel 2,654 1
    • 1 $2.69
    • 10 $1.734
    • 100 $2.69
    • 1000 $0.8835
    • 10000 $0.8835
    		Buy Now
    SI4425BDY-T1-GE3 Cut Tape 2,654 1
    • 1 $2.69
    • 10 $1.734
    • 100 $2.69
    • 1000 $0.8835
    • 10000 $0.8835
    		Buy Now
    SI4425BDY-T1-GE3 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.7875
    		Buy Now

    Vishay Intertechnologies SI4425BDY-T1-E3

    Trans MOSFET P-CH 30V 8.8A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4425BDY-T1-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4425BDY-T1-E3 Reel 5,000 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.76271
    		Buy Now
    SI4425BDY-T1-E3 Ammo Pack 11 Weeks, 1 Days 1
    • 1 $1.55
    • 10 $1.21
    • 100 $1.01
    • 1000 $1.01
    • 10000 $1.01
    		Buy Now
    Verical SI4425BDY-T1-E3 2,500 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.4103
    		Buy Now
    Arrow Electronics SI4425BDY-T1-E3 2,500 13 Weeks 2,500
    • 1 $0.5616
    • 10 $0.5616
    • 100 $0.5616
    • 1000 $0.5616
    • 10000 $0.4103
    		Buy Now
    Newark SI4425BDY-T1-E3 Cut Tape 4,535 1
    • 1 $0.742
    • 10 $0.742
    • 100 $0.742
    • 1000 $0.742
    • 10000 $0.742
    		Buy Now
    SI4425BDY-T1-E3 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.816
    		Buy Now
    Bristol Electronics SI4425BDY-T1-E3 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    SI4425BDY-T1-E3 1,134
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Quest Components SI4425BDY-T1-E3 2,000
    • 1 $2.016
    • 10 $2.016
    • 100 $2.016
    • 1000 $0.7056
    • 10000 $0.7056
    		Buy Now
    SI4425BDY-T1-E3 303
    • 1 $2.016
    • 10 $2.016
    • 100 $1.008
    • 1000 $0.8064
    • 10000 $0.8064
    		Buy Now
    SI4425BDY-T1-E3 231
    • 1 $2.016
    • 10 $2.016
    • 100 $1.008
    • 1000 $0.8064
    • 10000 $0.8064
    		Buy Now
    TTI SI4425BDY-T1-E3 Reel 17,500 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.549
    		Buy Now
    Avnet Asia SI4425BDY-T1-E3 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    EBV Elektronik SI4425BDY-T1-E3 14 Weeks 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Vishay Intertechnologies SI4425BDY-T1-GE3

    P Channel Mosfet; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:11.4A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400Mv; Power Dissipation:2.5W Rohs Compliant: Yes |Vishay SI4425BDY-T1-GE3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI4425BDY-T1-GE3 Cut Tape 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    SI4425BDY-T1-GE3 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Vishay Intertechnologies SI4425BDYT1E3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI4425BDYT1E3 916
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    ComSIT USA SI4425BDYT1E3 907
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Find more SI4425BDY price and stock on Findchips.com

    SI4425BDY Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4425BDY Vishay Siliconix MOSFET, P SO-8MOSFET, P SO-8; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:8.8A; Current, Idm pulse:-50A; Power, Pd:1.5W; Resistance, Rds on:0.012R; SMD:1; Charge, gate p Original PDF
    SI4425BDY Vishay Siliconix MOSFETs Original PDF
    SI4425BDY Vishay Telefunken P-channel 30-v (d-s) Mosfet Original PDF
    SI4425BDY-E3 Vishay Siliconix P-Channel 30-V (D-S) MOSFET Original PDF
    Si4425BDY SPICE Device Model Vishay P-Channel 30-V (D-S) MOSFET Original PDF
    SI4425BDY-T1 Vishay Siliconix P-Channel 30-V (D-S) MOSFET Original PDF
    SI4425BDYT1E3 Vishay Siliconix TRANS,FET,P-CHAN,SOT23,30V,7A Original PDF
    SI4425BDY-T1-E3 Vishay Siliconix P-Channel 30-V (D-S) MOSFET Original PDF
    SI4425BDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 8.8A 8-SOIC Original PDF
    SI4425BDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 8.8A 8-SOIC Original PDF

    SI4425BDY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si4425BDY

    Abstract: 15TR13
    Text: SPICE Device Model Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si4425BDY S-51095Rev. 13-Jun-05 15TR13 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.012 @ VGS = −10 V −11.4 APPLICATIONS 0.019 @ VGS = −4.5 V −9.1 D Load Switches


    Original     		Si4425BDY Si4425BDY--T1 Si4425BDY--E3 Si4425BDY-T1--E3 18-Jul-08 PDF

    SI4425DY-T1

    Abstract: SI4425BDY Si4425DY Si4425BDY-E3 Si4425BDY-T1 Si4425BDY-T1-E3
    Text: Specification Comparison Vishay Siliconix Si4425BDY vs. Si4425DY Description: P-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4425BDY Replaces Si4425DY Si4425BDY-E3 (Lead (Pb)-free version) Replaces Si4425DY Si4425BDY-T1 Replaces Si4425DY-T1


    Original     		Si4425BDY Si4425DY Si4425BDY-E3 Si4425BDY-T1 Si4425DY-T1 Si4425BDY-T1-E3 PDF

    Si4425BDY

    Abstract: Si4425BDY-T1-E3 Si4425BDY-T1-GE3
    Text: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.012 at VGS = - 10 V - 11.4 0.019 at VGS = - 4.5 V - 9.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si4425BDY 2002/95/EC Si4425BDY-T1-E3 Si4425BDY-T1-GE3 11-Mar-11 PDF

    SI4425BDY

    Abstract: Si4425BDY-T1-E3 Si4425BDY-T1-GE3 SI4425BDY-T1-E3 SO8
    Text: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.012 at VGS = - 10 V - 11.4 0.019 at VGS = - 4.5 V - 9.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si4425BDY 2002/95/EC Si4425BDY-T1-E3 Si4425BDY-T1-GE3 18-Jul-08 SI4425BDY-T1-E3 SO8 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.012 at VGS = - 10 V - 11.4 0.019 at VGS = - 4.5 V - 9.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si4425BDY 2002/96/EC Si4425BDY-T1-E3 Si4425BDY-T1-GE3 18-Jul-08 PDF

    DSA003103

    Abstract: Si4425BDY Si4425BDY-T1
    Text: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.012 @ VGS = - 10 V - 11.4 APPLICATIONS 0.019 @ VGS = - 4.5 V - 9.1 D Load Switches


    Original     		Si4425BDY Si4425BDY-T1 S-31990--Rev. 13-Oct-03 DSA003103 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.012 at VGS = - 10 V - 11.4 0.019 at VGS = - 4.5 V - 9.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si4425BDY 2002/95/EC Si4425BDY-T1-E3 Si4425BDY-T1-GE3 11-Mar-11 PDF

    7916

    Abstract: AN609 Si4425BDY
    Text: Si4425BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si4425BDY AN609 31-Aug-05 7916 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.012 @ VGS = −10 V −11.4 APPLICATIONS 0.019 @ VGS = −4.5 V −9.1 D Load Switches


    Original     		Si4425BDY Si4425BDY--T1 Si4425BDY--E3 Si4425BDY-T1--E3 S-50366--Rev. 28-Feb-05 PDF

    SI4425DDY

    Abstract: SI4425DDY-T1-GE3 SI4425BDY SI4425BDY-T1-GE3 SI4425BDY-T1-E3 SO8 65188 SI4425BDY-T1-E3
    Text: Specification Comparison Vishay Siliconix Si4425DDY vs. Si4425BDY Description: Package: Pin Out: P-Channel, 30-V D-S MOSFET SO-8 Identical Part Number Replacements: Si4425DDY-T1-GE3 replaces Si4425BDY-T1-E3 Si4425DDY-T1-GE3 replaces Si4425BDY-T1-GE3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		Si4425DDY Si4425BDY Si4425DDY-T1-GE3 Si4425BDY-T1-E3 Si4425BDY-T1-GE3 Cond019 15-Jul-09 SI4425BDY-T1-E3 SO8 65188 PDF

    21862

    Abstract: Si4425BDY S2186
    Text: Si4425BDY New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET D Advanced High Cell Density Process rDS(on) (W) ID (A) 0.012 @ VGS = -10 V -1 1.4 APPLICATIONS 0.019 @ VGS = -4.5 V - 9.1 D Load Switches


    Original     		Si4425BDY S-21862--Rev. 21-Oct-02 21862 S2186 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.012 at VGS = - 10 V - 11.4 0.019 at VGS = - 4.5 V - 9.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si4425BDY 2002/95/EC Si4425BDY-T1-E3 Si4425BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si4425BDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si4425BDY 0-to-10V 29-Sep-02 PDF

    SI4425BDY-T1-E3

    Abstract: SO-8 gs 069
    Text: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.012 at VGS = - 10 V - 11.4 0.019 at VGS = - 4.5 V - 9.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si4425BDY 2002/95/EC Si4425BDY-T1-E3 Si4425BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SO-8 gs 069 PDF

    Si4425BDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si4425BDY 18-Jul-08 PDF

    Si4425BDY

    Abstract: Si4425BDY-T1
    Text: Si4425BDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D Advanced High Cell Density Process PRODUCT SUMMARY VDS (V) −30 rDS(on) (W) ID (A) 0.012 @ VGS = −10 V −11.4 APPLICATIONS 0.019 @ VGS = −4.5 V −9.1 D Load Switches


    Original     		Si4425BDY Si4425BDY--T1 Si4425BDY--E3 Si4425BDY-T1--E3 08-Apr-05 Si4425BDY-T1 PDF

    73D31

    Abstract: D9322 PC8394T NQ82915GM 88sa8040 PC8394T-VJG connector IDE TO SATA SIL3811 USB 1.0 A Socket wistron PC8394
    Text: Intel Mobile CPU Clock Generator ICS954204 IDTCV139/CY28441 14 Y Note-6 Block Diagram Dothan: 1.6BGHz/1.73GHz 1.87GHz/2AGHz/2.1GHz Celeron:1.4GHz/1.5GHz/1.6GHz 3,4,5 AGTL+ FSB Thermal Sensor LM26 DDR2 SODIMM Socket 4 6,7,8,9,10 SMBus ATMEL AT24RF08CN 48 HDD


    Original     		ICS954204 IDTCV139/CY28441 73GHz 87GHz/2AGHz/2 39T5202 400/533MHz 200-PIN 400/533MHz LM75X2 73D31 D9322 PC8394T NQ82915GM 88sa8040 PC8394T-VJG connector IDE TO SATA SIL3811 USB 1.0 A Socket wistron PC8394 PDF

    cx20561-12z

    Abstract: IT8502 IT8502E fds8884 8502E CX20561 RT8204 ISL6251 ALPRS355B R5538
    Text: 1 2 3 4 5 7 8 LE6 BLOCK DIAGRAM PCB STACK UP 6L LAYER 1 : TOP LAYER 3 : IN1 01 CPU THERMAL SENSOR CPU Penryn LAYER 2 : GND A 6 14.318MHz PAGE 6 478P uPGA /35W PAGE 4,5 LAYER 4 : IN2 A CLK_CPU_BCLK,CLK_CPU_BCLK# CLOCK GEN CLK_MCH_BCLK,CLK_MCH_BCLK# LAYER 5 : VCC


    Original     		318MHz ALPRS355B MLF64PIN 768KHz 150MB ISL6251AHAZ-layer PR174 BAT54S PR190 PR184 cx20561-12z IT8502 IT8502E fds8884 8502E CX20561 RT8204 ISL6251 R5538 PDF

    HD b3c

    Abstract: reference design 88E8057 TP160A WPCE773LA0DG tps51125 W25X32V oz27C10 CX20561 C1602 a v1.3 Wistron Corporation
    Text: 5 4 3 2 1 SYSTEM DC/DC MI1 Block Diagram 43 TPS51125 Project code: 91.4I201.001 PCB P/N : 48.4I201.0SB REVISION : SB INPUTS OUTPUTS 5V_S5 7A 3D3V_S5(7A) DCBATOUT 5V_AUX_S5 3D3V_AUX_S5 D D Fan1 SMSC Mobile CPU CPU EMC2106 Penryn SYSTEM DC/DC 21 INPUTS VGA 21


    Original     		TPS51125 4I201 EMC2106 TPS51116 667/800/1066MHz ISL6244 RT8202 PCIex16 10KR2J-3-GP HD b3c reference design 88E8057 TP160A WPCE773LA0DG tps51125 W25X32V oz27C10 CX20561 C1602 a v1.3 Wistron Corporation PDF

    SI4435BDY

    Abstract: pcie connector
    Text: MIC2341/2341R Dual-Slot PCI Express Hot-Plug Controller General Description The MIC2341 is a dual-slot power controller supporting the power distribution requirements for Peripheral Component Interconnect Express PCI Express Hot-Plug compliant systems. The MIC2341 provides complete power control


    Original     		MIC2341/2341R MIC2341 M9999-102507-A SI4435BDY pcie connector PDF

    1N4007 MINI MELF

    Abstract: No abstract text available
    Text: LCD Television Table of Contents BACKLIGHT INVERTER, Lighting Ignitor. 3 BACKLIGHT INVERTER, MOSFET Driver. 4


    Original     		250ns DO-220AA V-540V; V-440V; DO-204AL DO-41) DO-204AC 1N4007 MINI MELF PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3 PDF