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    SI4948 Price and Stock

    Vishay Siliconix SI4948BEY-T1-E3

    MOSFET 2P-CH 60V 2.4A 8SOIC
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    DigiKey SI4948BEY-T1-E3 Cut Tape 13,451 1
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    SI4948BEY-T1-E3 Digi-Reel 13,451 1
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    SI4948BEY-T1-E3 Reel 12,500 2,500
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    New Advantage Corporation SI4948BEY-T1-E3 2,500 1
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    Vishay Siliconix SI4948BEY-T1-GE3

    MOSFET 2P-CH 60V 2.4A 8SOIC
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    DigiKey SI4948BEY-T1-GE3 Digi-Reel 3,336 1
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    SI4948BEY-T1-GE3 Cut Tape 3,336 1
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    SI4948BEY-T1-GE3 Reel 2,500 2,500
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    New Advantage Corporation SI4948BEY-T1-GE3 5,000 1
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    Vishay Intertechnologies SI4948BEY-T1-E3

    Transistor MOSFET Array Dual P-CH 60V 2.4A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4948BEY-T1-E3)
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    Avnet Americas SI4948BEY-T1-E3 Reel 5,000 13 Weeks 2,500
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    SI4948BEY-T1-E3 Ammo Pack 31 Weeks, 1 Days 1
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    Mouser Electronics SI4948BEY-T1-E3 95,270
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    Verical SI4948BEY-T1-E3 155,000 2,500
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    SI4948BEY-T1-E3 40,000 2,500
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    SI4948BEY-T1-E3 2,500 2,500
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    SI4948BEY-T1-E3 2,500 2,500
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    Arrow Electronics SI4948BEY-T1-E3 155,000 13 Weeks 2,500
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    SI4948BEY-T1-E3 40,000 13 Weeks 2,500
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    Newark SI4948BEY-T1-E3 Cut Tape 2,726 5
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    SI4948BEY-T1-E3 Reel 2,500
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    Vishay Intertechnologies SI4948BEY-T1-GE3

    Transistor MOSFET Array Dual P-CH 60V 2.4A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4948BEY-T1-GE3)
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    Avnet Americas SI4948BEY-T1-GE3 Reel 2,500 6 Weeks 2,500
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    Mouser Electronics SI4948BEY-T1-GE3 19,155
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    Verical SI4948BEY-T1-GE3 5,000 2,500
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    Arrow Electronics SI4948BEY-T1-GE3 5,000 6 Weeks 2,500
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    SI4948BEY-T1-GE3 2,500 6 Weeks 2,500
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    SI4948BEY-T1-GE3 Cut Strips 210 6 Weeks 1
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    Newark SI4948BEY-T1-GE3 Cut Tape 1
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    SI4948BEY-T1-GE3 Reel 2,500
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    TTI SI4948BEY-T1-GE3 Reel 25,000 2,500
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    TME SI4948BEY-T1-GE3 680 1
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    Vishay Intertechnologies SI4948BEY-T1-E3.

    Mosfet, Dual P Channel, -60V, -2.4A, Soic-8, Full Reel; Channel Type:Dual P Channel; Drain Source Voltage Vds N Channel:-; Drain Source Voltage Vds P Channel:60V; Continuous Drain Current Id N Channel:-; No. Of Pins:8Pins Rohs Compliant: No |Vishay SI4948BEY-T1-E3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI4948BEY-T1-E3. Reel 2,500
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    Find more SI4948 price and stock on Findchips.com

    SI4948 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4948BEY Vishay Siliconix MOSFETs Original PDF
    Si4948BEY-E3 Vishay Dual P-Channel 60-V (D-S) 175 MOSFET Original PDF
    Si4948BEY-T1-E3 Vishay Dual P-Channel 60-V (D-S) 175 MOSFET Original PDF
    SI4948BEY-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 60V 2.4A 8-SOIC Original PDF
    SI4948BEY-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 60V 2.4A 8-SOIC Original PDF
    SI4948EY Unknown Dual P-Channel 60-V (D-S), 175C MOSFET Original PDF
    Si4948EY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI4948EY Vishay Dual P-Channel 60-V (D-S), 175°C MOSFET Original PDF
    Si4948EY Vishay Intertechnology Dual P-Channel 60-V (D-S), 175°C MOSFET Original PDF

    SI4948 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si4948EY

    Abstract: No abstract text available
    Text: Si4948EY Vishay Siliconix Dual P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.120 at VGS = - 10 V ± 3.1 0.150 at VGS = - 4.5 V ± 2.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si4948EY 2002/95/EC Si4948EY-T1-E3 Si4948EY-T1-GE3 18-Jul-08

    Si4948BEY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4948BEY Vishay Siliconix Dual P-Channel 60-V D-S 175° MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4948BEY 18-Jul-08

    Si4948EY

    Abstract: No abstract text available
    Text: Si4948EY Dual P-Channel 60-V, 175_C Rated MOSFET Product Summary VDS V –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.1 0.150 @ VGS = –4.5 V "2.8 S1 S2 SO-8 S1 G1 S2 G2 8 D1 2 7 D1 3 6 D2 4 5 D2 1 G1 Top View G2 D1 D1 D2 D2 P-Channel MOSFET P-Channel MOSFET


    Original     		PDF Si4948EY S-49520--Rev. 18-Dec-96

    SI4948EY-T1-E3

    Abstract: Si4948BEY Si4948BEY-T1-E3 Si4948EY si4948
    Text: Specification Comparison Vishay Siliconix Si4948BEY vs. Si4948EY Description: Dual P-Channel, 60 V D-S MOSFET Package: SO-8 Pin Out: Identical Part Number Replacements: Si4948BEY-T1-E3 Replaces Si4948EY-T1-E3 Si4948BEY-T1-E3 Replaces Si4948EY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si4948BEY Si4948EY Si4948BEY-T1-E3 Si4948EY-T1-E3 Si4948EY-T1 08-Nov-06 si4948

    SI4948EY-T1-E3

    Abstract: No abstract text available
    Text: Si4948EY Vishay Siliconix Dual P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.120 at VGS = - 10 V ± 3.1 0.150 at VGS = - 4.5 V ± 2.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si4948EY 2002/95/EC Si4948EY-T1-E3 Si4948EY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    99444

    Abstract: Si4948EY
    Text: Si4948EY Vishay Siliconix Dual P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.1 0.150 @ VGS = –4.5 V "2.8 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View G1 G2 D1 D1 D2 P-Channel MOSFET


    Original     		PDF Si4948EY 18-Jul-08 99444

    Si4948EY

    Abstract: No abstract text available
    Text: Si4948EY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.1 0.150 @ VGS = –4.5 V "2.8 S1 S2 SO-8 S1 G1 S2 G2 8 D1 2 7 D1 3 6 D2 4 5 D2 1 G1 Top View G2 D1 D1 D2 D2 P-Channel MOSFET P-Channel MOSFET


    Original     		PDF Si4948EY S-47968--Rev. 22-Jul-96

    99444

    Abstract: Si4948EY 31AR
    Text: Si4948EY Vishay Siliconix Dual P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.1 0.150 @ VGS = –4.5 V "2.8 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View G1 G2 D1 D1 D2 P-Channel MOSFET


    Original     		PDF Si4948EY 08-Apr-05 99444 31AR

    99444

    Abstract: Si4948EY
    Text: Si4948EY Vishay Siliconix Dual P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.1 0.150 @ VGS = –4.5 V "2.8 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View G1 G2 D1 D1 D2 P-Channel MOSFET


    Original     		PDF Si4948EY S-99444--Rev. 29-Nov-99 99444

    si4948

    Abstract: No abstract text available
    Text: Si4948EY Vishay Siliconix Dual P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.120 at VGS = - 10 V ± 3.1 0.150 at VGS = - 4.5 V ± 2.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si4948EY 2002/95/EC Si4948EY-T1-E3 Si4948EY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4948

    Untitled

    Abstract: No abstract text available
    Text: Si4948BEY Vishay Siliconix Dual P-Channel 60-V D-S 175° MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V - 3.1 0.150 at VGS = - 4.5 V - 2.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4948BEY 2002/95/EC Si4948BEY-T1-E3 Si4948BEY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si4948EY Vishay Siliconix Dual P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.120 at VGS = - 10 V ± 3.1 0.150 at VGS = - 4.5 V ± 2.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si4948EY 2002/95/EC Si4948EY-T1-E3 Si4948EY-T1-GE3 11-Mar-11

    Si4948BEY

    Abstract: Si4948BEY-T1-E3
    Text: Si4948BEY Vishay Siliconix Dual P-Channel 60-V D-S 175° MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V - 3.1 0.150 at VGS = - 4.5 V - 2.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4948BEY 2002/95/EC Si4948BEY-T1-E3 Si4948BEY-T1-GE3 18-Jul-08

    si494

    Abstract: SI4948BEY-T1-E3 1002 soic-8 transient
    Text: Si4948BEY Vishay Siliconix Dual P-Channel 60-V D-S 175° MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V - 3.1 0.150 at VGS = - 4.5 V - 2.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4948BEY 2002/95/EC Si4948BEY-T1-E3 Si4948BEY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si494 1002 soic-8 transient

    4704 mosfet

    Abstract: 4704 AN609 Si4948BEY
    Text: Si4948BEY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si4948BEY AN609 23-Jan-06 4704 mosfet 4704

    si4948

    Abstract: Si4948BEY 40430
    Text: Si4948BEY Vishay Siliconix New Product Dual P-Channel 60-V D-S 175_ MOSFET PRODUCT SUMMARY VDS (V) −60 60 rDS(on) (W) ID (A) 0.120 @ VGS = −10 V −3.1 0.150 @ VGS = −4.5 V −2.8 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View Ordering Information: Si4948BEY—E3 (Lead Free)


    Original     		PDF Si4948BEY Si4948BEY--E3 S-40430--Rev. 15-Mar-04 si4948 40430

    Si4948EY

    Abstract: No abstract text available
    Text: Si4948EY Dual P-Channel 60-V, 175_C Rated MOSFET Product Summary VDS V –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.1 0.150 @ VGS = –4.5 V "2.8 S1 S2 SO-8 S1 G1 S2 G2 8 D1 2 7 D1 3 6 D2 4 5 D2 1 G1 Top View G2 D1 D1 D2 D2 P-Channel MOSFET P-Channel MOSFET


    Original     		PDF Si4948EY S-49520--Rev. 18-Dec-96

    Untitled

    Abstract: No abstract text available
    Text: Si4948BEY Vishay Siliconix Dual P-Channel 60-V D-S 175° MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V - 3.1 0.150 at VGS = - 4.5 V - 2.8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si4948BEY 2002/95/EC Si4948BEY-T1-E3 Si4948BEY-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si4948BEY Vishay Siliconix New Product Dual P-Channel 60-V D-S 175_ MOSFET PRODUCT SUMMARY VDS (V) −60 60 rDS(on) (W) ID (A) 0.120 @ VGS = −10 V −3.1 0.150 @ VGS = −4.5 V −2.8 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View Ordering Information: Si4948BEY—E3 (Lead Free)


    Original     		PDF Si4948BEY Si4948BEY--E3 18-Jul-08

    Si4948BEY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4948BEY Vishay Siliconix Dual P-Channel 60-V D-S 175° MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si4948BEY S-52399Rev. 21-Nov-05

    Untitled

    Abstract: No abstract text available
    Text: Si4948EY Vishay Siliconix Dual P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.1 0.150 @ VGS = –4.5 V "2.8 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View G1 G2 D1 D1 D2 P-Channel MOSFET


    Original     		PDF Si4948EY S-99444--Rev. 29-Nov-99

    si4948

    Abstract: Si4948EY
    Text: Si4948EY Siliconix Dual P-Channel 60-V D-S , 175_C MOSFET Product Summary VDS (V) –60 60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "3.1 0.150 @ VGS = –4.5 V "2.8 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View G1 G2 D1 D1 D2 D2 P-Channel MOSFET


    Original     		PDF Si4948EY S-57253--Rev. 24-Feb-98 si4948

    Si4948BEY

    Abstract: No abstract text available
    Text: Si4948BEY Vishay Siliconix New Product Dual P-Channel 60-V D-S 175_ MOSFET PRODUCT SUMMARY VDS (V) −60 60 rDS(on) (W) ID (A) 0.120 @ VGS = −10 V −3.1 0.150 @ VGS = −4.5 V −2.8 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View Ordering Information: Si4948BEY—E3 (Lead Free)


    Original     		PDF Si4948BEY Si4948BEY--E3 08-Apr-05

    qmb-111p

    Abstract: NC13 ag 19V DC 90w Battery ER10280 X200C AD1985 82551ER CH-4542 DLP31DN201ML4L 52u27
    Text: 5 4 Version Date Author Remarks 0.1 05.06.2007 WAM Initial version 0.2 28.11.2007 PHA 3 2 1 Correction of PCI-Bus Correction of minor errors D 0.3 05.03.2008 PHA D Fix VCC SB +5V Standby to VCC (+5V) LCD (X15) Pinout compatible with MSM800 12V Supply removed / Supply the 12V external on .


    Original     		PDF MSM800 CH-4542 MSEBX800 330uF VCC12 SI4453DY 2N7002 qmb-111p NC13 ag 19V DC 90w Battery ER10280 X200C AD1985 82551ER DLP31DN201ML4L 52u27