SI5465EDC Search Results

SI5465EDC Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
Si5465EDC		Vishay Intertechnology	P-Channel 12-V (D-S) MOSFET		Original	PDF
SI5465EDC		Vishay Siliconix	MOSFETs		Original	PDF

SI5465EDC Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
73005 Abstract: Si5465EDC Text: SPICE Device Model Si5465EDC Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	PDF	Si5465EDC 18-Jul-08 73005
Si5465EDC Abstract: siliconix Text: Si5465EDC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.037 @ VGS = –4.5 V –7.0 0.048 @ VGS = –2.5 V –6.1 0.065 @ VGS = –1.8 V –5.2 S 1206-8 ChipFET 1 D D G 5.4 kW D D D D G S Marking Code	Original	PDF	Si5465EDC S-03912--Rev. 21-May-01 siliconix
Untitled Abstract: No abstract text available Text: Si5465EDC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.037 @ VGS = –4.5 V –7.0 –12 0.048 @ VGS = –2.5 V –6.1 0.065 @ VGS = –1.8 V –5.2 1206-8 ChipFET S 1 D D D D D D G S Marking Code 5.4 kW	Original	PDF	Si5465EDC S-03191--Rev. 12-Mar-01
Si5465EDC Abstract: No abstract text available Text: Si5465EDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) -12 rDS(on) (Ω) ID (A) 0.037 @ VGS = -4.5 V -7.0 0.048 @ VGS = -2.5 V -6.1 0.065 @ VGS = -1.8 V -5.2 S 1206-8 ChipFETt 1 D D G 5.4 kΩ D D D D G S Marking Code LC XX Lot Traceability	Original	PDF	Si5465EDC Si5465EDC-T1 S-21251--Rev. 05-Aug-02
Si5465EDC Abstract: 54kd Text: Si5465EDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) -12 rDS(on) (Ω) ID (A) 0.037 @ VGS = -4.5 V -7.0 0.048 @ VGS = -2.5 V -6.1 0.065 @ VGS = -1.8 V -5.2 S 1206-8 ChipFETt 1 D D G 5.4 kΩ D D D D G S Marking Code LC XX Lot Traceability	Original	PDF	Si5465EDC Si5465EDC-T1 18-Jul-08 54kd
1.6562 Abstract: 16562 4717 AN609 Si5465EDC Text: Si5465EDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	PDF	Si5465EDC AN609 20-Jun-07 1.6562 16562 4717
Untitled Abstract: No abstract text available Text: Si5465EDC Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) -12 rDS(on) (Ω) ID (A) 0.037 @ VGS = -4.5 V -7.0 0.048 @ VGS = -2.5 V -6.1 0.065 @ VGS = -1.8 V -5.2 S 1206-8 ChipFETt 1 D D G 5.4 kΩ D D D D G S Marking Code LC XX Lot Traceability	Original	PDF	Si5465EDC Si5465EDC-T1 08-Apr-05
Untitled Abstract: No abstract text available Text: Si5465EDC New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.037 @ VGS = –4.5 V –7.0 –12 0.048 @ VGS = –2.5 V –6.1 0.065 @ VGS = –1.8 V –5.2 1206-8 ChipFET S 1 D D D D D D G S Marking Code 5.4 kW	Original	PDF	Si5465EDC S-02662--Rev. 04-Dec-00
GS 069 Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8 Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no	Original	PDF	Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8