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Vishay Siliconix SI5855CDC-T1-E3 MOSFET P-CH 20V 3.7A 1206-8
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DigiKey	SI5855CDC-T1-E3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI5855CDCT1E3 Electronic Component
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ComSIT USA	SI5855CDCT1E3		43			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Others SI5855CDC-T1-E3
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Chip-Germany GmbH	SI5855CDC-T1-E3		1,458			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SI5855CDC-T1-E3
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Chip-Germany GmbH	SI5855CDC-T1-E3		309			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI5855CDC Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI5855CDC-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 3.7A 1206-8		Original	PDF

SI5855CDC Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Si5855CDC Abstract: No abstract text available Text: SPICE Device Model Si5855CDC Vishay Siliconix P-Channel 20-V D-S MOSFET with Schottky Diode CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range	Original	Si5855CDC 18-Jul-08	PDF
9806 Abstract: 3771 8727 AN609 Text: Si5855CDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	Si5855CDC AN609, CONFIG2518 15-Sep-08 9806 3771 8727 AN609	PDF
Untitled Abstract: No abstract text available Text: Si5855CDC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.144 at VGS = - 4.5 V - 3.7 0.180 at VGS = - 2.5 V - 3.3 0.222 at VGS = - 1.8 V - 3.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21	Original	Si5855CDC 2002/95/EC 11-Mar-11	PDF
Untitled Abstract: No abstract text available Text: Si5855CDC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.144 at VGS = - 4.5 V - 3.7 0.180 at VGS = - 2.5 V - 3.3 0.222 at VGS = - 1.8 V - 3.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21	Original	Si5855CDC 2002/95/EC 11-Mar-11	PDF
SI5855CDC-T1 Abstract: Si5855CDC-T1-E3 68910 Text: Si5855CDC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.144 at VGS = - 4.5 V - 3.7 0.180 at VGS = - 2.5 V - 3.3 0.222 at VGS = - 1.8 V - 3.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21	Original	Si5855CDC 2002/95/EC 18-Jul-08 SI5855CDC-T1 Si5855CDC-T1-E3 68910	PDF
Untitled Abstract: No abstract text available Text: Si5855CDC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.144 at VGS = - 4.5 V - 3.7 0.180 at VGS = - 2.5 V - 3.3 0.222 at VGS = - 1.8 V - 3.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21	Original	Si5855CDC 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
S-8229 Abstract: SI5855CDC Text: Si5855CDC Vishay Siliconix P-Channel 20-V D-S MOSFET With Schottky Diode FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.144 at VGS = - 4.5 V - 3.7 0.180 at VGS = - 2.5 V - 3.3 0.222 at VGS = - 1.8 V - 3.0 VDS (V) - 20 • LITTLE FOOT Plus Power MOSFET	Original	Si5855CDC 18-Jul-08 S-8229	PDF
Si5855DC Abstract: Si5855CDC-T1-E3 Si5855CDC SI5855CDC-T1 SI5855DC-T1 Si5855DC-T1-E3 Text: Specification Comparison Vishay Siliconix Si5855CDC vs. Si5855DC Description: Package: Pin Out: P-Channel, 20-V D-S MOSFET with Schottky Diode 1206-8 ChipFET Identical Part Number Replacements: Si5855CDC-T1-E3 replaces Si5855DC-T1-E3 Si5855CDC-T1-E3 replaces Si5855DC-T1	Original	Si5855CDC Si5855DC Si5855CDC-T1-E3 Si5855DC-T1-E3 Si5855DC-T1 23-Sep-08 SI5855CDC-T1	PDF
Untitled Abstract: No abstract text available Text: Si5855CDC Vishay Siliconix P-Channel 20 V D-S MOSFET with Schottky Diode FEATURES MOSFET PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) - 20 0.144 at VGS = - 4.5 V - 3.7 0.180 at VGS = - 2.5 V - 3.3 0.222 at VGS = - 1.8 V - 3.0 • Halogen-free According to IEC 61249-2-21	Original	Si5855CDC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF
Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477	PDF