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    SI6415 Price and Stock

    Vishay Siliconix SI6415DQ-T1-GE3

    MOSFET P-CH 30V 6.5A 8TSSOP
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    DigiKey SI6415DQ-T1-GE3 Digi-Reel 4,907 1
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    SI6415DQ-T1-GE3 Cut Tape 4,907 1
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    SI6415DQ-T1-GE3 Reel 3,000 3,000
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    New Advantage Corporation SI6415DQ-T1-GE3 3,000 1
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    Vishay Siliconix SI6415DQ-T1-E3

    MOSFET P-CH 30V 6.5A 8TSSOP
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    DigiKey SI6415DQ-T1-E3 Cut Tape 1,691 1
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    SI6415DQ-T1-E3 Digi-Reel 1,691 1
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    SI6415DQ-T1-E3 Reel 3,000
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    RS SI6415DQ-T1-E3 Bulk 3,000
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    Vishay Siliconix SI6415DQ-T1-BE3

    P-CHANNEL 30-V (D-S) MOSFET
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    DigiKey SI6415DQ-T1-BE3 Cut Tape 1
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    SI6415DQ-T1-BE3 Digi-Reel 1
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    SI6415DQ-T1-BE3 Reel 3,000
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    Vishay Intertechnologies SI6415DQ-T1-E3

    Trans MOSFET P-CH 30V 6.5A 8-Pin TSSOP T/R - Tape and Reel (Alt: SI6415DQ-T1-E3)
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    Avnet Americas SI6415DQ-T1-E3 Reel 3,000
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    Verical SI6415DQ-T1-E3 3,000 10
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    Arrow Electronics SI6415DQ-T1-E3 Cut Strips 3,000 9 Weeks 1
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    Newark SI6415DQ-T1-E3 Cut Tape 2,674 1
    • 1 $1.93
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    SI6415DQ-T1-E3 Reel 3,000
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    Bristol Electronics SI6415DQ-T1-E3 5
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    TTI SI6415DQ-T1-E3 Reel 27,000 3,000
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    EBV Elektronik SI6415DQ-T1-E3 10 Weeks 3,000
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    Vishay Intertechnologies SI6415DQ-T1-GE3

    Trans MOSFET P-CH 30V 6.5A 8-Pin TSSOP T/R - Tape and Reel (Alt: SI6415DQ-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI6415DQ-T1-GE3 Reel 13 Weeks 3,000
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    Mouser Electronics SI6415DQ-T1-GE3 16,595
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    Verical SI6415DQ-T1-GE3 3,000 3,000
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    SI6415DQ-T1-GE3 3,000 3,000
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    SI6415DQ-T1-GE3 2,610 38
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    Arrow Electronics SI6415DQ-T1-GE3 3,000 13 Weeks 3,000
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    Newark SI6415DQ-T1-GE3 Cut Tape 4,676 5
    • 1 $1.81
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    SI6415DQ-T1-GE3 Reel 3,000
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    TTI SI6415DQ-T1-GE3 Reel 3,000
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    Velocity Electronics SI6415DQ-T1-GE3 1
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    Chip1Stop SI6415DQ-T1-GE3 Cut Tape 2,800
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    • 100 $0.636
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    EBV Elektronik SI6415DQ-T1-GE3 14 Weeks 3,000
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    SI6415 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI6415DQ Fairchild Semiconductor 30V P-Channel PowerTrench MOSFET Original PDF
    Si6415DQ Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI6415DQ Vishay 30-V (D-S) Single Original PDF
    Si6415DQ Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original PDF
    Si6415DQ SPICE Device Model Vishay P-Channel 30-V (D-S) MOSFET Original PDF
    SI6415DQ-T1 Vishay Transistor Mosfet P-CH 30V 6.5A 8TSSOP REEL Original PDF
    SI6415DQ-T1 Vishay Intertechnology P-Channel 30-V (D-S) MOSFET Original PDF
    SI6415DQ-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 6.5A 8-TSSOP Original PDF
    SI6415DQ-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 6.5A 8-TSSOP Original PDF

    SI6415 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V ± 6.5 0.030 at VGS = - 4.5 V ± 5.2 • Halogen-free • TrenchFET Power MOSFETs Pb-free Available RoHS* COMPLIANT S* TSSOP-8


    Original
    Si6415DQ Si6415DQ-T1 Si6415DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si6415DQ

    Abstract: Si6415DQ-T1 Si6415DQ-T1-GE3
    Text: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V ± 6.5 0.030 at VGS = - 4.5 V ± 5.2 • Halogen-free • TrenchFET Power MOSFETs Pb-free Available RoHS* COMPLIANT S* TSSOP-8


    Original
    Si6415DQ Si6415DQ-T1 Si6415DQ-T1-GE3 PDF

    Si6415DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si6415DQ S-60075Rev. 23-Jan-06 PDF

    Si6415DQ

    Abstract: No abstract text available
    Text: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.019 @ VGS = –10 V "6.5 0.030 @ VGS = –4.5 V "5.2 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6415DQ G * Source Pins 2, 3, 6 and 7 must be tied common.


    Original
    Si6415DQ 08-Apr-05 PDF

    2502P

    Abstract: CBHK741B019 F63TNR FDW2502P Si6415DQ
    Text: Si6415DQ 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive


    Original
    Si6415DQ 2502P CBHK741B019 F63TNR FDW2502P PDF

    Si6415DQ

    Abstract: No abstract text available
    Text: Si6415DQ 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive


    Original
    Si6415DQ PDF

    Si6415DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si6415DQ 0-to-10V 11-Apr-02 PDF

    Si6415DQ

    Abstract: Si6415DQ-T1
    Text: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V ± 6.5 0.030 at VGS = - 4.5 V ± 5.2 • Halogen-free • TrenchFET Power MOSFETs Pb-free Available RoHS* COMPLIANT S* TSSOP-8


    Original
    Si6415DQ Si6415DQ-T1 Si6415DQ-T1-GE3 18-Jul-08 PDF

    Si6415DQ

    Abstract: No abstract text available
    Text: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.019 @ VGS = –10 V "6.5 0.030 @ VGS = –4.5 V "5.2 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6415DQ G * Source Pins 2, 3, 6 and 7 must be tied common.


    Original
    Si6415DQ S-49519--Rev. 18-Dec-96 PDF

    leadframe materials

    Abstract: No abstract text available
    Text: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V ± 6.5 0.030 at VGS = - 4.5 V ± 5.2 • Halogen-free • TrenchFET Power MOSFETs Pb-free Available RoHS* COMPLIANT S* TSSOP-8


    Original
    Si6415DQ Si6415DQ-T1 Si6415DQ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 leadframe materials PDF

    Untitled

    Abstract: No abstract text available
    Text: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V ± 6.5 0.030 at VGS = - 4.5 V ± 5.2 • Halogen-free • TrenchFET Power MOSFETs Pb-free Available RoHS* COMPLIANT S* TSSOP-8


    Original
    Si6415DQ Si6415DQ-T1 Si6415DQ-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V ± 6.5 0.030 at VGS = - 4.5 V ± 5.2 • Halogen-free • TrenchFET Power MOSFETs Pb-free Available RoHS* COMPLIANT S* TSSOP-8


    Original
    Si6415DQ Si6415DQ-T1 Si6415DQ-T1-GE3 11-Mar-11 PDF

    Si6415DQ

    Abstract: No abstract text available
    Text: Si6415DQ P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.019 @ VGS = –10 V "6.5 0.030 @ VGS = –4.5 V "5.2 S* TSSOP-8 D S S G 1 2 3 4 D Si6415DQ 8 7 6 5 G D S S D *Source Pins 2, 3, 6 and 7 must be tied common. Top View


    Original
    Si6415DQ S-49519--Rev. 18-Dec-96 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si6415DQ P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.019 @ VGS = –10 V "6.5 0.030 @ VGS = –4.5 V "5.2 S* TSSOP-8 D S S G 1 2 3 4 D Si6415DQ 8 7 6 5 G D S S D *Source Pins 2, 3, 6 and 7 must be tied common. Top View


    Original
    Si6415DQ S-49519--Rev. 18-Dec-96 PDF

    Si6415DQ-T1

    Abstract: Si6415DQ
    Text: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V ± 6.5 0.030 at VGS = - 4.5 V ± 5.2 • Halogen-free • TrenchFET Power MOSFETs Pb-free Available RoHS* COMPLIANT S* TSSOP-8


    Original
    Si6415DQ Si6415DQ-T1 Si6415DQ-T1-GE3 11-Mar-11 PDF

    Si6415DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si6415DQ 18-Jul-08 PDF

    diode 1 N 4747 A

    Abstract: AN609 Si6415DQ 25166
    Text: Si6415DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    Si6415DQ AN609 27-Jun-07 diode 1 N 4747 A 25166 PDF

    Si4435DY

    Abstract: Si4710CY
    Text: Si4710CY New Product Vishay Siliconix Battery Disconnect Switch FEATURES D Level-Shifted Gate Drive with Internal MOSFET D Ultra Low Power Consumption in Off State Leakage Current Only D Logic Supply Voltage is Not Required D Solution for Bi-Directional Blocking


    Original
    Si4710CY S-99585--Rev. 20-Dec-98 Si4435DY PDF

    mi4410

    Abstract: MI4435 S39421 Si4431DY equivalent MI44 IRF7606 VME COnnector IRF7603 IRF7413 MMSF7N03HD
    Text: Application Note 9 Using the S39421 as the Primary Control Circuit on a VME Live Insertion Card High availability is a key feature of many types of systems today. Whether the system is a central office switch, a private branch exchange or a server it is important the


    Original
    S39421 These30V MTSF2P03HD MMSF3P02HD MTD20P03HDL2 Si6435DQ Si6415DQ Si4431DY Si4435DY VME64x mi4410 MI4435 Si4431DY equivalent MI44 IRF7606 VME COnnector IRF7603 IRF7413 MMSF7N03HD PDF

    Bi-Directional P-Channel mosfet

    Abstract: si4720cy Si4435DY Si4720
    Text: Si4720CY Vishay Siliconix Battery Disconnect Switch FEATURES D Level-Shifted Gate Drive with Internal MOSFET D Two Independent Inputs D Ultra Low Power Consumption in Off State Leakage Current Only D Logic Supply Voltage is Not Required D Solution for Bi-Directional Blocking


    Original
    Si4720CY Si472lectual 18-Jul-08 Bi-Directional P-Channel mosfet Si4435DY Si4720 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original
    SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3 PDF

    Si4435DY

    Abstract: Si4720 Si4720CY
    Text: Si4720CY Vishay Siliconix Battery Disconnect Switch FEATURES D Level-Shifted Gate Drive with Internal MOSFET D Two Independent Inputs D Ultra Low Power Consumption in Off State Leakage Current Only D Logic Supply Voltage is Not Required D Solution for Bi-Directional Blocking


    Original
    Si4720CY Si472ed 08-Apr-05 Si4435DY Si4720 PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original
    GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF