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    h1010

    Abstract: 1/SI9939 Si9942DY si9939
    Text: Si9942DY Siliconix Dual EnhancementĆMode MOSFET NĆ and PĆChannel Product Summary VDS (V) NĆChannel 20 PĆChannel -20 rDS(on) (W) ID (A) 0.125 @ VGS = 10 V "3.0 0.250 @ VGS = 4.5 V "2.0 0.200 @ VGS = -10 V "2.5 0.350 @ VGS = -4.5 V "2.0 Recommended upgrade: Si9939


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    Si9942DY Si9939 Si6942DQ P-38798--Rev. h1010 1/SI9939 si9939 PDF

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    Abstract: No abstract text available
    Text: Tem ic SÌ9942DY Siliconix Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VD S(V) N-Channel 20 P-Channel 20 r DS(on) (Û ) I d (A) 0.125 @ V GS = 10 V ±3.0 0.250 @ V Gs = 4.5 V ± 2.0 0.200 @ V Gs = - 1 0 V ±2.5 0.350 @ V GS = -4 .5 V ± 2.0


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    9942DY Si9939 Si6942DQ P-35258--Rev. PDF

    si6942

    Abstract: No abstract text available
    Text: T e m ic siiiconix_ SÌ9942DY Dual Enhancement-Mode MOSFET N- and P-Channel Product Summary VDS(V) N-Channel P-Channel 20 -2 0 r DS(on) (Q ) I d (A) 0.125 @ VGs = 10 V ±3.0 0.250 @ VGs = 4.5 V ±2.0 0.200 @ VGs = - 1 0 V ±2.5 0.350 @ VGS = -4 .5 V


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    9942DY Si9939 Si6942DQ l50oC P-38798-- si6942 PDF

    SI9952DY

    Abstract: P3482 SI9952 S19939DY
    Text: Tem ic SÌ9952DY Siliconix Dual Enhancement-Mode MOSFET N- and P-Channel Product Summaiy V d s (V) N-Channel r DS(on) (Q ) I d (A) 0.10 @ V GS = 10 V ± 3 .5 0.15 @ V GS = 4.5 V ± 2 .0 0.25 @ V GS = - 1 0 V ± 2 .3 0.40 @ V GS = - 4 .5 V ± 1 .8 25 P-Channel


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    9952DY S19939DY Si9943DY Si6942DQ P-34826--Rev. 05A6/94) SI9952DY P3482 SI9952 PDF