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    SI6983DQ Search Results

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    SI6983DQ Price and Stock

    Vishay Siliconix SI6983DQ-T1-E3

    MOSFET 2P-CH 20V 4.6A 8TSSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI6983DQ-T1-E3 Digi-Reel 1
    • 1 $2.16
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    • 100 $2.16
    • 1000 $2.16
    • 10000 $2.16
    		Buy Now
    SI6983DQ-T1-E3 Reel 3,000
    • 1 -
    • 10 -
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    • 1000 -
    • 10000 $0.58375
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    SI6983DQ-T1-E3 Cut Tape 1
    • 1 $2.16
    • 10 $2.16
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    Vishay Siliconix SI6983DQ-T1-GE3

    MOSFET 2P-CH 20V 4.6A 8TSSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI6983DQ-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.58375
    		Buy Now

    SI6983DQ Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI6983DQ Vishay Siliconix MOSFETs Original PDF
    Si6983DQ SPICE Device Model Vishay Dual P-Channel 20-V (D-S) MOSFET Original PDF
    SI6983DQ-T1-E3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 4.6A 8TSSOP Original PDF
    SI6983DQ-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 20V 4.6A 8TSSOP Original PDF

    SI6983DQ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si6983DQ

    Abstract: No abstract text available
    Text: Si6983DQ Vishay Siliconix New Product Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.024 at VGS = - 4.5 V - 5.4 0.030 at VGS = - 2.5 V - 4.8 0.042 at VGS = - 1.8 V - 4.0 • TrenchFET Power MOSFET Pb-free - 20 APPLICATIONS


    Original     		Si6983DQ Si6983DQ-T1 Si6983DQ-T1-E3 08-Apr-05 PDF

    Si6983DQ

    Abstract: No abstract text available
    Text: Si6983DQ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.024 at VGS = - 4.5 V - 5.4 0.030 at VGS = - 2.5 V - 4.8 0.042 at VGS = - 1.8 V - 4.0 • Halogen-free • TrenchFET Power MOSFET RoHS COMPLIANT


    Original     		Si6983DQ Si6983DQ-T1-GE3 18-Jul-08 PDF

    Si6983DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6983DQ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si6983DQ 19-Sep-03 PDF

    74801

    Abstract: 412600 AN609 Si6983DQ 74909
    Text: Si6983DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si6983DQ AN609 11-Jul-07 74801 412600 74909 PDF

    Si6983DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6983DQ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si6983DQ 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si6983DQ Vishay Siliconix New Product Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.024 at VGS = - 4.5 V - 5.4 0.030 at VGS = - 2.5 V - 4.8 0.042 at VGS = - 1.8 V - 4.0 • TrenchFET Power MOSFET Pb-free - 20 APPLICATIONS


    Original     		Si6983DQ Si6983DQ-T1 Si6983DQ-T1-E3 08-Apr-05 PDF

    31913

    Abstract: Si6983DQ
    Text: Si6983DQ Vishay Siliconix New Product Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.024 @ VGS = -4.5 V -5.4 0.030 @ VGS = -2.5 V -4.8 0.042 @ VGS = -1.8 V -4.0 APPLICATIONS D Load Switch


    Original     		Si6983DQ Si6983DQ-T1 S-31913--Rev. 15-Sep-03 31913 PDF

    Si6983DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6983DQ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si6983DQ S-60146Rev. 13-Feb-06 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si6983DQ Vishay Siliconix New Product Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.024 @ VGS = -4.5 V -5.4 0.030 @ VGS = -2.5 V -4.8 0.042 @ VGS = -1.8 V -4.0 APPLICATIONS D Load Switch


    Original     		Si6983DQ Si6983DQ-T1 08-Apr-05 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3 PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF

    BS250KL

    Abstract: tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X
    Text: P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		SC-75 SC-75A SC-89 BS250KL tsop6 marking 345 SUD50P08 SI3437 SUD19P06-60L MOSFET SUB75P03 tsop6 marking 443 Si5947DU Si1471DH SI1073X PDF

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8 PDF

    si5480

    Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
    Text: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


    Original     		Si6463BDQ Si6459BDQ-T1-GE3 SI5944DU-T1-E3 SI5944DU-T1-GE3 SI5945DU-T1-E3 SI5945DU-T1-GE3 SI5947DU-T1-E3 SI5947DU-T1-GE3 PPAKSC75 si5480 SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3 PDF