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Vishay Siliconix SI8816EDB-T2-E1 MOSFET N-CH 30V 4MICROFOOT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI8816EDB-T2-E1	Cut Tape	4,753		1	1 $0.65 10 $0.399 100 $0.65 1000 $0.17356 10000 $0.17356	Buy Now
	SI8816EDB-T2-E1	Digi-Reel	4,753		1	1 $0.65 10 $0.399 100 $0.65 1000 $0.17356 10000 $0.17356	Buy Now
	SI8816EDB-T2-E1	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.14811	Buy Now
Vishay Intertechnologies SI8816EDB-T2-E1 N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI8816EDB-T2-E1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI8816EDB-T2-E1	Reel		6 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.10871	Buy Now
Mouser Electronics	SI8816EDB-T2-E1		2,179			1 $0.51 10 $0.34 100 $0.191 1000 $0.157 10000 $0.115	Buy Now
Newark	SI8816EDB-T2-E1	Reel			3,000	1 $0.183 10 $0.183 100 $0.183 1000 $0.183 10000 $0.151	Buy Now
TTI	SI8816EDB-T2-E1	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.118	Buy Now
EBV Elektronik	SI8816EDB-T2-E1			7 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI8816EDB-T2-E1-A VISSI8816EDB-T2-E1-A N-CHANNEL 30-V (D-S (Alt: SI8816EDB-T2-E1-A)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Asia	SI8816EDB-T2-E1-A			8 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI8816EDB Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SI8816EDB-T2-E1		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V MICRO FOOT		Original	PDF

SI8816EDB Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SI8816EDB Abstract: No abstract text available Text: Si8816EDB www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) Max. ID (A) a 0.109 at VGS = 10 V 2.3 0.116 at VGS = 4.5 V 2.3 0.123 at VGS = 3.7 V 2.2 0.142 at VGS = 2.5 V 2.0 VDS (V) 30 MICRO FOOT 0.8 x 0.8 S	Original	Si8816EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model Si8816EDB www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C	Original	Si8816EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SI8816EDB Abstract: No abstract text available Text: Si8816EDB Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () Max. ID (A)a 0.109 at VGS = 10 V 2.3 0.116 at VGS = 4.5 V 2.3 0.123 at VGS = 3.7 V 2.2 0.142 at VGS = 2.5 V 2.0 • • • • • Qg (Typ.) 2.4 nC APPLICATIONS	Original	Si8816EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Untitled Abstract: No abstract text available Text: Si8816EDB_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	Si8816EDB AN609, 6881u 1308u 0726m 3566u 8911m 8092m 7026m 28-Feb-13	PDF
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm	Original	Si8489EDB Si8902AEDB VMN-PT0107-1402	PDF