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    SI8821EDB Price and Stock

    Vishay Siliconix SI8821EDB-T2-E1

    MOSFET P-CH 30V 4MICROFOOT
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    DigiKey SI8821EDB-T2-E1 Cut Tape 5,391 1
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    SI8821EDB-T2-E1 Digi-Reel 5,391 1
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    SI8821EDB-T2-E1 Reel 3,000 3,000
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    Vishay Intertechnologies SI8821EDB-T2-E1

    Trans MOSFET P-CH 30V 2.3A 4-Pin MICRO FOOT T/R - Tape and Reel (Alt: SI8821EDB-T2-E1)
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    Avnet Americas SI8821EDB-T2-E1 Reel 3,000 18 Weeks 3,000
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    Mouser Electronics SI8821EDB-T2-E1 26,863
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    Verical SI8821EDB-T2-E1 3,000 3,000
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    Arrow Electronics SI8821EDB-T2-E1 3,000 18 Weeks 3,000
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    Newark SI8821EDB-T2-E1 Reel 3,000
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    TTI SI8821EDB-T2-E1 Reel 3,000 3,000
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    EBV Elektronik SI8821EDB-T2-E1 22 Weeks 3,000
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    SI8821EDB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI8821EDB-T2-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V MICRO FOOT Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: Si8821EDB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) (Ω) Max. ID (A) a, e 0.135 at VGS = -4.5 V -2.3 0.150 at VGS = -3.7 V -2.1 0.215 at VGS = -2.5 V -1.8 MICRO FOOT 0.8 x 0.8 S 3 xxx xx 5.2 nC


    Original
    PDF Si8821EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si8821EDB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original
    PDF Si8821EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8821EDB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) () Max. ID (A) a, e 0.128 at VGS = -4.5 V -2.3 0.143 at VGS = -3.7 V -2.1 0.215 at VGS = -2.5 V -1.8 MICRO FOOT 0.8 x 0.8 S 3 xxx xx 5.2 nC


    Original
    PDF Si8821EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8821EDB Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY RDS(on) () Max. ID (A)a, e 0.128 at VGS = - 4.5 V - 2.3 0.143 at VGS = - 3.7 V - 2.1 0.215 at VGS = - 2.5 V - 1.8 VDS (V) - 30 Qg (Typ.) 5.2 nC


    Original
    PDF Si8821EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI8821EDB

    Abstract: No abstract text available
    Text: Si8821EDB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) (Ω) Max. ID (A) a, e 0.128 at VGS = -4.5 V -2.3 0.143 at VGS = -3.7 V -2.1 0.215 at VGS = -2.5 V -1.8 MICRO FOOT 0.8 x 0.8 S 3 xxx xx 5.2 nC


    Original
    PDF Si8821EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm


    Original
    PDF Si8489EDB Si8902AEDB VMN-PT0107-1402