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    SI941 Price and Stock

    NXP Semiconductors SI9410DY,518

    MOSFET N-CH 30V SOT96-1
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    DigiKey SI9410DY,518 Reel 10,000
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    Vishay Siliconix SI9410BDY-T1-E3

    MOSFET N-CH 30V 6.2A 8SO
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    Vishay Siliconix SI9410BDY-T1-GE3

    MOSFET N-CH 30V 6.2A 8SO
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    Vishay Intertechnologies SI9410BDY-T1-E3

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    Quest Components SI9410BDY-T1-E3 1,532
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    SI9410BDY-T1-E3 1,488
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    SI9410BDY-T1-E3 754
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    EBV Elektronik SI9410BDY-T1-E3 143 Weeks 2,500
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    Vishay Siliconix SI9410DYT1

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    Bristol Electronics SI9410DYT1 2,462
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    SI941 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI9410ADY Vishay N-Channel Enhancement-Mode MOSFET Original PDF
    SI9410BDY Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    Si9410BDY SPICE Device Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF
    Si9410BDY-T1 Vishay Siliconix N-Channel 30-V (D-S) MOSFET Original PDF
    SI9410BDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.2A 8SOIC Original PDF
    SI9410BDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.2A 8SOIC Original PDF
    SI9410DY Fairchild Semiconductor Single N-Channel Enhancement Mode MOSFET Original PDF
    SI9410DY Kexin N-Channel 30V MOSFET Original PDF
    Si9410DY Philips Semiconductors N-channel TrenchMOS logic level FET Original PDF
    SI9410DY Philips Semiconductors N-channel enhancement mode field-effect transistor Original PDF
    Si9410DY Philips Semiconductors N-Channel Enhancement Mode Field-Effect Transistor Original PDF
    Si9410DY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI9410DY General Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N-Channel, 30V, Single, Pkg Style SO-8 Scan PDF
    SI9410DY,518 Philips Semiconductors FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 7A SOT96-1 Original PDF
    Si9410DY SPICE Device Model Vishay N-Channel 30-V (D-S) MOSFET Original PDF

    SI941 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Si9410BDY

    Abstract: Si9410BDY-T1-E3
    Text: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.024 at VGS = 10 V 8.1 0.033 at VGS = 4.5 V 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		Si9410BDY 2002/95/EC Si9410BDY-T1-E3 Si9410BDY-T1-GE3 11-Mar-11 PDF

    Si9410DY

    Abstract: No abstract text available
    Text: Si9410DY Siliconix NĆChannel EnhancementĆMode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 30 D D D D SOĆ8 N/C 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S NĆChannel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)


    Original     		Si9410DY P-38889--Rev. PDF

    Power MOSFET, Fairchild

    Abstract: Si9410DY
    Text: Si9410DY* Single N-Channel Enhancement Mode MOSFET General Description Features This N-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		Si9410DY Power MOSFET, Fairchild PDF

    133532

    Abstract: AN609 Si9410BDY
    Text: Si9410BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si9410BDY AN609 10-Aug-07 133532 PDF

    Si4410DY

    Abstract: Si4936DY Si6434DQ Si9410DY
    Text: Si9410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see Si6434DQ D D D D SO-8


    Original     		Si9410DY Si4410DY Si4936DY Si6434DQ S-51309--Rev. 18-Dec-96 PDF

    Si9410BDY

    Abstract: Si9410BDY-T1
    Text: Si9410BDY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 8.1 0.033 @ VGS = 4.5 V 6.9 D TrenchFETr Power MOSFETS D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si9410BDY


    Original     		Si9410BDY Si9410BDY-T1 25Duty S-31409--Rev. 07-Jul-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 8.1 0.033 @ VGS = 4.5 V 6.9 D TrenchFETr Power MOSFETS D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET Ordering Information: Si9410BDY


    Original     		Si9410BDY Si9410BDY-T1 Si9410BDY--E3 Si9410BDY-T1--E3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.024 at VGS = 10 V 8.1 0.033 at VGS = 4.5 V 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		Si9410BDY 2002/95/EC Si9410BDY-T1-E3 Si9410BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SI9410DY Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)20 I(D) Max. (A)7.0 I(DM) Max. (A) Pulsed I(D)5.8 @Temp (øC)70’ IDM Max (@25øC Amb)20 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.5 Minimum Operating Temp (øC)-55


    Original     		SI9410DY PDF

    HZG469

    Abstract: Si9410DY
    Text: Si9410DY N-channel TrenchMOS logic level FET Rev. 03 — 23 January 2004 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 2. Features • Low on-state resistance ■ Fast switching


    Original     		Si9410DY M3D315 OT96-1 MBK187 MBB076 HZG469 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.024 at VGS = 10 V 8.1 0.033 at VGS = 4.5 V 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		Si9410BDY 2002/95/EC Si9410BDY-T1-E3 Si9410BDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si9410DY

    Abstract: No abstract text available
    Text: Si9410DY N-channel enhancement mode field-effect transistor Rev. 02 — 05 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9410DY in SOT96-1 SO8 .


    Original     		Si9410DY M3D315 OT96-1 OT96-1, PDF

    a-14-s

    Abstract: Si4410DY Si4936DY Si6434DQ Si9410DY
    Text: Si9410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6434DQ


    Original     		Si9410DY Si4410DY Si4936DY Si6434DQ S-47958--Rev. 15-Apr-96 a-14-s PDF

    Si9410BDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si9410BDY 0-to-10V 27-Jun-03 PDF

    74ac123

    Abstract: u21a C277 RSMRST U21B FUSE-1A C278 1k33 r566 r564
    Text: 1 2 3 4 5 6 7 8 +5V VDD3 pull high at d/d bd pull high at d/d bd PWR_ON CPUPWR_ON 16,21 VDD3 14 12 R112 2 2 1 1 1 2 RSMRST# VDD3 C601 1U/NA 0805C 7,20 1 2 2 3 JP506 JP_SMT4_DFS JP505 JP_SMT4_DFS 1 S U510B 6 CEXT VCC GND 0/NA C594 0.1U 0603B Q14 SI9410DY_V/NA


    Original     		SI9410DY 0603B 1000P 0603B DTC144WK OT23AN 74ac123 u21a C277 RSMRST U21B FUSE-1A C278 1k33 r566 r564 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si9410DY N-channel enhancement mode field-effect transistor Rev. 01 — 15 May 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9410DY in SOT96-1 SO8 .


    Original     		Si9410DY M3D315 OT96-1 OT96-1, MBK187 MBB076 PDF

    Si9410DY

    Abstract: Siliconix Si4410DY Si4936DY Si6434DQ
    Text: Si9410DY Siliconix N-Channel Enhancement-Mode MOSFET PRODUCT SUMMARY VDS V RDS(ON) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 30 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see Si6434DQ D D D D


    Original     		Si9410DY Si4410DY Si4936DY Si6434DQ S-51309--Rev. 18-Dec-96 Siliconix PDF

    Si9410DY

    Abstract: No abstract text available
    Text: Si9410DY Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 30 D D D D SO-8 N/C 8 D 2 7 D 3 6 D 5 D 1 S S G 4 G Top View S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		Si9410DY S-00652--Rev. 27-Mar-00 PDF

    AW SO-8

    Abstract: No abstract text available
    Text: Si9410DY Single N-Channel Enhancement Mode MOSFET General Description Features This N-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		Si9410DY AW SO-8 PDF

    Si9410BDY-T1

    Abstract: No abstract text available
    Text: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.024 at VGS = 10 V 8.1 0.033 at VGS = 4.5 V 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC


    Original     		Si9410BDY 2002/95/EC Si9410BDY-T1-E3 Si9410BDY-T1-GE3 11-Mar-11 Si9410BDY-T1 PDF

    SI9410DY-T1

    Abstract: Si9410BDY-E3 Si9410BDY-T1-E3 SI9410DY Si9410BDY TF11 Si9410BDY-T1
    Text: Specification Comparison Vishay Siliconix Si9410BDY vs. Si9410DY Description: N-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si9410BDY Replaces Si9410DY Si9410BDY-E3 (Lead (Pb)-free version) Replaces Si9410DY Si9410BDY-T1 Replaces Si9410DY-T1


    Original     		Si9410BDY Si9410DY Si9410BDY-E3 Si9410BDY-T1 Si9410DY-T1 Si9410BDY-T1-E3 TF11 PDF

    Si9410BDY-E3

    Abstract: No abstract text available
    Text: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 8.1 0.033 @ VGS = 4.5 V 6.9 D TrenchFETr Power MOSFETS D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET Ordering Information: Si9410BDY


    Original     		Si9410BDY Si9410BDY-T1 Si9410BDY--E3 Si9410BDY-T1--E3 08-Apr-05 Si9410BDY-E3 PDF

    Si9410BDY

    Abstract: Si9410BDY-E3 Si9410BDY-T1
    Text: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V 8.1 0.033 @ VGS = 4.5 V 6.9 D TrenchFETr Power MOSFETS D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET Ordering Information: Si9410BDY


    Original     		Si9410BDY Si9410BDY-T1 Si9410BDY--E3 Si9410BDY-T1--E3 70TERISTICS S-50153--Rev. 31-Jan-05 Si9410BDY-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOSFET SMD Type N-Channel 30-V D-S MOSFET SI9410DY SOP-8 • Features ● VDS (V) = 30V ● ID = 7 A (VGS = 10V) ● RDS(ON) ＜0.03 Ω (VGS = 10V) ● RDS(ON) ＜0.04 Ω (VGS = 5V) ● RDS(ON) ＜0.05 Ω (VGS = 4.5V) D D D D N/C 1 8 D S 2 7 D S 3 6 D G


    Original     		SI9410DY PDF