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    SI9948 Search Results

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    SI9948 Price and Stock

    UMW SI9948AEY

    MOSFET 2P-CH 60V 5.3A 8SOP
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    DigiKey SI9948AEY Digi-Reel 1
    • 1 $0.88
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    SI9948AEY Cut Tape 1
    • 1 $0.88
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    SI9948AEY Reel 3,000
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    Vishay Intertechnologies SI9948AEY-T1-E3

    Channel Type:P Channel; Drain Source Voltage Vds N Channel:-; Drain Source Voltage Vds P Channel:60V; Continuous Drain Current Id N Channel:-; Continuous Drain Current Id P Channel:2.6A; Drain Source On State Resistance N Channel:- Rohs Compliant: Yes |Vishay SI9948AEY-T1-E3
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    Newark SI9948AEY-T1-E3 Cut Tape 2,500
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    Bristol Electronics SI9948AEY-T1-E3 195
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    Quest Components SI9948AEY-T1-E3 842
    • 1 $3.54
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    ComSIT USA SI9948AEY-T1-E3 3,597
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    Vishay Siliconix SI9948DY-T1

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    Bristol Electronics SI9948DY-T1 1,500
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    Vishay Intertechnologies SI9948AEY

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    Bristol Electronics SI9948AEY 490
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    Quest Components SI9948AEY 116
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    Vishay Siliconix SI9948AEY

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    Bristol Electronics SI9948AEY 29
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    Quest Components SI9948AEY 23
    • 1 $3.99
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    ComSIT USA SI9948AEY 2,165
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    SI9948 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si9948AEY Unknown Metal oxide P-channel FET, Enhancement Type Original PDF
    Si9948AEY Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SI9948AEY Vishay Dual P-Channel 60-V (D-S), 175°C MOSFET Original PDF
    Si9948AEY Vishay Intertechnology Dual P-Channel Enhancement-Mode MOSFET Original PDF
    SI9948AEY Siliconix Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, P-Channel, -60, Dual, Pkg Style, SO-8 Scan PDF
    Si9948AEY SPICE Device Model Vishay Dual P-Channel Enhancement-Mode MOSFET Original PDF
    SI9948AEY-T1 Vishay Intertechnology Dual P-Channel Enhancement-Mode MOSFET Original PDF
    Si9948DY Toshiba Power MOSFETs Cross Reference Guide Original PDF

    SI9948 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    The subcircuit model was extracted and optimized

    Abstract: Si9948AEY si9948
    Text: SPICE Device Model Si9948AEY Dual P-Channel Enhancement-Mode MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model Subcircuit • Level 3 MOS • Applicable for Both Linear and Switchmode • Applicable Over a -55 to 125°C Temperature Range


    Original
    PDF Si9948AEY The subcircuit model was extracted and optimized si9948

    si9950

    Abstract: Si9950DY Si9948DY SI9945 Si9945DY
    Text: Si9950DY Complementary MOSFET Half-Bridge Product Summary VDS V N- or P-Channel 50 rDS(on) (W) ID (A) 0.3 @ VGS = 10 V "2.0 1.0 @ VGS = 5 V "1.2 Alternate Solution: one Si9948DY and one Si9945DY V+ V+ SO-16 GND 1 16 GND OUTPUT 2 15 OUTPUT OUTPUT 3 14 OUTPUT


    Original
    PDF Si9950DY Si9948DY Si9945DY SO-16 P-38889--Rev. 17-Oct-94 si9950 SI9945

    Si9948DY

    Abstract: No abstract text available
    Text: Si9948DY Siliconix Dual PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -60 rDS(on) (W) ID (A) 0.28 @ VGS = -10 V "2.0 0.50 @ VGS = -4.5 V "1.6 S1 S2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View G1 G2 D1 D1 D2 D2 PĆChannel MOSFET PĆChannel MOSFET


    Original
    PDF Si9948DY S-42910--Rev.

    SI9948AEY-T1-E3

    Abstract: Si9948AEY SI9948AEY-T1
    Text: Si9948AEY Vishay Siliconix Dual P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.17 at VGS = - 10 V ± 2.6 0.26 at VGS = - 4.5 V ± 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original
    PDF Si9948AEY 2002/95/EC Si9948AEY-T1-E3 Si9948AEY-T1-GE3 18-Jul-08 SI9948AEY-T1

    2231 0048

    Abstract: AN609 Si9948AEY 17818 matching mosfet
    Text: Si9948AEY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    PDF Si9948AEY AN609 10-Aug-07 2231 0048 17818 matching mosfet

    SI9950DY

    Abstract: si9950 6V25V SI9945 Si9948DY Si9945DY
    Text: Si9950DY Complementary MOSFET Half-Bridge Product Summary VDS V N- or P-Channel 50 rDS(on) (W) ID (A) 0.3 @ VGS = 10 V "2.0 1.0 @ VGS = 5 V "1.2 Alternate Solution: one Si9948DY and one Si9945DY V+ V+ SO-16 GND 1 16 GND OUTPUT 2 15 OUTPUT OUTPUT 3 14 OUTPUT


    Original
    PDF Si9950DY Si9948DY Si9945DY SO-16 P-38889--Rev. 17-Oct-94 si9950 6V25V SI9945

    SI9948AEY-T1

    Abstract: No abstract text available
    Text: Si9948AEY Vishay Siliconix Dual P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.17 at VGS = - 10 V ± 2.6 0.26 at VGS = - 4.5 V ± 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original
    PDF Si9948AEY 2002/95/EC Si9948AEY-T1-E3 Si9948AEY-T1-GE3 11-Mar-11 SI9948AEY-T1

    Si9948AEY

    Abstract: No abstract text available
    Text: Si9948AEY Vishay Siliconix Dual P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.17 @ VGS = –10 V "2.6 0.26 @ VGS = –4.5 V "2.1 –60 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View G1 G2 D1 D1 D2 P-Channel MOSFET


    Original
    PDF Si9948AEY 18-Jul-08

    SI9948AEY

    Abstract: No abstract text available
    Text: Si9948AEY Vishay Siliconix Dual P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.17 @ VGS = –10 V "2.6 0.26 @ VGS = –4.5 V "2.1 –60 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View G1 G2 D1 D1 D2 P-Channel MOSFET


    Original
    PDF Si9948AEY 08-Apr-05

    Si9948AEY

    Abstract: No abstract text available
    Text: Si9948AEY Vishay Siliconix Dual P-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.17 @ VGS = –10 V "2.6 0.26 @ VGS = –4.5 V "2.1 –60 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View G1 G2 D1 D1 D2 P-Channel MOSFET


    Original
    PDF Si9948AEY S-57253--Rev. 24-Feb-98

    Si9948DY

    Abstract: No abstract text available
    Text: Si9948DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –60 rDS(on) (W) ID (A) 0.28 @ VGS = –10 V "2.0 0.50 @ VGS = –4.5 V "1.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2 D1 D1 D2 D2 P-Channel MOSFET P-Channel MOSFET


    Original
    PDF Si9948DY S-47958--Rev. 15-Apr-96

    Si9948AEY

    Abstract: No abstract text available
    Text: SPICE Device Model Si9948AEY Vishay Siliconix Dual P-Channel Enhancement-Mode MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si9948AEY 18-Jul-08

    si9948

    Abstract: SI9948AEY-T1
    Text: Si9948AEY Vishay Siliconix Dual P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.17 at VGS = - 10 V ± 2.6 0.26 at VGS = - 4.5 V ± 2.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original
    PDF Si9948AEY 2002/95/EC Si9948AEY-T1-E3 Si9948AEY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si9948 SI9948AEY-T1

    Si9948DY

    Abstract: No abstract text available
    Text: Si9948DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –60 rDS(on) (W) ID (A) 0.28 @ VGS = –10 V "2.0 0.50 @ VGS = –4.5 V "1.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2 D1 D1 D2 D2 P-Channel MOSFET P-Channel MOSFET


    Original
    PDF Si9948DY S-47958--Rev. 15-Apr-96

    Si9948DY

    Abstract: No abstract text available
    Text: Si9948DY Dual P-Channel Enhancement-Mode MOSFET Product Summary VDS V –60 rDS(on) (W) ID (A) 0.28 @ VGS = –10 V "2.0 0.50 @ VGS = –4.5 V "1.6 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2 D1 D1 D2 D2 P-Channel MOSFET P-Channel MOSFET


    Original
    PDF Si9948DY S-47958--Rev. 15-Apr-96

    Si9948AEY

    Abstract: No abstract text available
    Text: Si9948AEY Siliconix Dual P-Channel 60-V D-S , 175_C MOSFET New Product Product Summary VDS (V) –60 60 rDS(on) (W) ID (A) 0.17 @ VGS = –10 V "2.6 0.26 @ VGS = –4.5 V "2.1 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2 D1 D1 D2 D2 P-Channel MOSFET


    Original
    PDF Si9948AEY S-57253--Rev. 24-Feb-98

    Si9948AEY

    Abstract: SI9948AEY T&R
    Text: SPICE Device Model Si9948AEY Vishay Siliconix Dual P-Channel Enhancement-Mode MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si9948AEY 18-Apr-01 SI9948AEY T&R

    SI9950DY

    Abstract: si9950 Si9948DY SI9945 Si9945DY 6V25V
    Text: Si9950DY Complementary MOSFET Half-Bridge Product Summary VDS V N- or P-Channel 50 rDS(on) (W) ID (A) 0.3 @ VGS = 10 V "2.0 1.0 @ VGS = 5 V "1.2 Alternate Solution: one Si9948DY and one Si9945DY V+ V+ SO-16 GND 1 16 GND OUTPUT 2 15 OUTPUT OUTPUT 3 14 OUTPUT


    Original
    PDF Si9950DY Si9948DY Si9945DY SO-16 P-38889--Rev. 17-Oct-94 si9950 SI9945 6V25V

    Si9948AEY

    Abstract: No abstract text available
    Text: SPICE Device Model Si9948AEY Vishay Siliconix Dual P-Channel Enhancement-Mode MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    PDF Si9948AEY S-60410Rev. 20-Mar-06

    Untitled

    Abstract: No abstract text available
    Text: SI9948DY Transistors Matched Pair of P-Channel Enhancement MOSFETs V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)2.0 I(DM) Max. (A) Pulsed I(D)1.6 @Temp (øC)70’ IDM Max (@25øC Amb)10 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.0 Minimum Operating Temp (øC)-55


    Original
    PDF SI9948DY

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original
    PDF

    IRF7205

    Abstract: IRF7342 IXTH7P50 T0-220AB BSS83 BSS84 irfp9240 IRF5210S IRFD9110 IRFD9210
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: BSS84 BSS92 BS250 BSS83 IRF5210S IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRFD9014 BSP315P IRFD9024 IRF9610 IRFL9014 IRF9620 IRF9630 SI9953DY SI9948AEY


    OCR Scan
    PDF BSS84 BSS92 BS250 BSS83 IRF5210S T0263 IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRF7205 IRF7342 IXTH7P50 T0-220AB irfp9240

    IRF7342

    Abstract: IRF7205 SI9933ADY IRF7103 IRF7104 SI4948EY SI4982DY SI9407AEY SI9939DY SI9942DY
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 CunoBbie TpaH3MCTopbi MOSFET b Kopnyce S M D S08 n p O M 3 B O flM T e n b flMana30H pa6oHMXTeMnepaiyp Kofl: Rds Hanpa^eHMe CTOK-MCTOK IRF7104 SI9953DY SI9948AEY SI4982DY IRF7103


    OCR Scan
    PDF flMana30H IRF7104 SI9953DY SI9948AEY SI4982DY IRF7103 SI9942DY SI4948EY SI9933ADY IRF7342 IRF7205 SI9407AEY SI9939DY

    Untitled

    Abstract: No abstract text available
    Text: Si9948AEY VISHAY Siliconix Dual P-Channel 60-V D-S , 175 °C MOSFET New Product Product Sum m ary VDS(V) -60 r DS(on) (£2) I d (A) 0.17 @ VGs = -10V ±2.6 0.26 @ VGs = -4.5 V ±2.1 P 0 'N T Si O S2 Q SO-8 si |~ r ~B~I Di Gi [ T ~ 1 Di 6 | D2 S2 [ T G2 I 4


    OCR Scan
    PDF Si9948AEY S2SM735 DD17flflT