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    Vishay Siliconix

    Vishay Siliconix SIA850DJ-T1-GE3

    MOSFET N-CH 190V 950MA PPAK
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    SIA850DJ Datasheets (1)

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    SIA850DJ-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 190V 950MA SC70-6 Original PDF

    SIA850DJ Datasheets Context Search

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    4532 MOSFET

    Abstract: Siliconix 4532 AN609 16933
    Text: SiA850DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		SiA850DJ AN609, 03-Sep-08 4532 MOSFET Siliconix 4532 AN609 16933 PDF

    DIODE TA 70/04

    Abstract: SC-70-6
    Text: New Product SiA850DJ Vishay Siliconix N-Channel 190-V D-S MOSFET with 190-V Diode FEATURES PRODUCT SUMMARY ID (A)a 0.95 Qg (Typ.) 4.2 at VGS = 2.5 V 0.9 1.4 nC 17 at VGS = 1.8 V 0.3 VDS (V) RDS(on) (Ω) 190 3.8 at VGS = 4.5 V • Halogen-free • LITTLE FOOT Plus Schottky Power MOSFET


    Original     		SiA850DJ SC-70 SC-70-6 18-Jul-08 DIODE TA 70/04 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA850DJ Vishay Siliconix N-Channel 190-V D-S MOSFET with 190-V Diode FEATURES PRODUCT SUMMARY ID (A)a 0.95 Qg (Typ.) 4.2 at VGS = 2.5 V 0.9 1.4 nC 17 at VGS = 1.8 V 0.3 VDS (V) RDS(on) (Ω) 190 3.8 at VGS = 4.5 V • Halogen-free According to IEC 61249-2-21


    Original     		SiA850DJ SC-70 SC-70-6 18-Jul-08 PDF

    SC-70-6

    Abstract: SIA850DJ
    Text: New Product SiA850DJ Vishay Siliconix N-Channel 190-V D-S MOSFET with 190-V Diode FEATURES PRODUCT SUMMARY ID (A)a 0.95 Qg (Typ.) 4.2 at VGS = 2.5 V 0.9 1.4 nC 17 at VGS = 1.8 V 0.3 VDS (V) RDS(on) (Ω) 190 3.8 at VGS = 4.5 V • Halogen-free According to IEC 61249-2-21


    Original     		SiA850DJ SC-70 SC-70-6 18-Jul-08 PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 PDF