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Vishay Siliconix SIB406EDK-T1-GE3 MOSFET N-CH 20V 6A PPAK SC75-6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIB406EDK-T1-GE3	Digi-Reel	1,873		1	1 $0.84 10 $0.52 100 $0.84 1000 $0.2319 10000 $0.2319	Buy Now
	SIB406EDK-T1-GE3	Cut Tape	1,873		1	1 $0.84 10 $0.52 100 $0.84 1000 $0.2319 10000 $0.2319	Buy Now
	SIB406EDK-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.19952	Buy Now
RS	SIB406EDK-T1-GE3	Bulk			20	1 - 10 - 100 $0.395 1000 $0.355 10000 $0.336	Get Quote
Vishay Intertechnologies SIB406EDK-T1-GE3 N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIB406EDK-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIB406EDK-T1-GE3	Reel		17 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.15375	Buy Now
Mouser Electronics	SIB406EDK-T1-GE3		11,004			1 $0.77 10 $0.497 100 $0.326 1000 $0.227 10000 $0.17	Buy Now
Verical	SIB406EDK-T1-GE3		295		38	1 - 10 - 100 $0.3363 1000 $0.335 10000 $0.335	Buy Now
Newark	SIB406EDK-T1-GE3	Reel			3,000	1 $0.22 10 $0.22 100 $0.22 1000 $0.22 10000 $0.199	Buy Now
	SIB406EDK-T1-GE3	Cut Tape			3,000	1 - 10 - 100 - 1000 - 10000 $0.215	Buy Now
TTI	SIB406EDK-T1-GE3	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.166	Buy Now

TME	SIB406EDK-T1-GE3				3,000	1 - 10 - 100 - 1000 - 10000 $0.273	Get Quote
Chip1Stop	SIB406EDK-T1-GE3	Cut Tape	295			1 - 10 $0.546 100 $0.218 1000 $0.217 10000 $0.217	Buy Now
EBV Elektronik	SIB406EDK-T1-GE3			18 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SIB406EDK Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIB406EDK-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 6A SC-75-6		Original	PDF

SIB406EDK Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SPICE Device Model SiB406EDK Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	SiB406EDK 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
64707 Abstract: 8844 1.4136 AN609 Text: SiB406EDK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,	Original	PDF	SiB406EDK AN609, 16-Dec-08 64707 8844 1.4136 AN609
SC-75 Abstract: No abstract text available Text: New Product SiB406EDK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.046 at VGS = 4.5 V 6 0.063 at VGS = 2.5 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®	Original	PDF	SiB406EDK SC-75 SC-75-6L-Single SiB406EDK-T1-GE3 18-Jul-08
Untitled Abstract: No abstract text available Text: SPICE Device Model SiB406EDK www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	SiB406EDK 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: New Product SiB406EDK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.046 at VGS = 4.5 V 6 0.063 at VGS = 2.5 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®	Original	PDF	SiB406EDK SC-75 SC-75-6L-Single SiB40electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: New Product SiB406EDK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.046 at VGS = 4.5 V 6 0.063 at VGS = 2.5 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®	Original	PDF	SiB406EDK SC-75 SC-75-6L-Single SiB406EDK-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: New Product SiB406EDK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.046 at VGS = 4.5 V 6 0.063 at VGS = 2.5 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®	Original	PDF	SiB406EDK SC-75 SC-75-6L-Single 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: New Product SiB406EDK Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.046 at VGS = 4.5 V 6 0.063 at VGS = 2.5 V 6 VDS (V) 20 • Halogen-free According to IEC 61249-2-21 • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®	Original	PDF	SiB406EDK SC-75 SC-75-6L-Single SiB406EDK-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - 1.6 mm x 1.6 mm Footprint with Low On-Resistance PowerPAK SC-75 Ultra-Low On-Resistance, and Ultra-Small Size Key features • PowerPAK® SC-75 provides same tiny 1.6 mm x 1.6 mm footprint as standard SC-75, but with	Original	PDF	SC-75 SC-75 SC-75, appli32 SiB437EDKT SiB441EDK SiB457EDK SiB433EDK SiB914DK SiB912DK
SiB914 Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 1.6 mm x 1.6 mm Footprint with Low On-Resistance AND TEC I INNOVAT O L OGY PowerPAK SC-75 N HN POWER MOSFETs O 19 62-2012 Ultra-Low On-Resistance, and Ultra-Small Size KEY FEATURES • PowerPAK® SC-75 provides same tiny 1.6 mm x 1.6 mm footprint as standard SC-75, but with	Original	PDF	SC-75 SC-75 SC-75, space-const19 com/mosfets/powerpak-sc-75-package/ VMN-PT0196-1209 SiB914
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	PDF	Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477