smd transistor M30
Abstract: siemens gaas fet m30 smd TRANSISTOR Behet SIEMENS MICROWAVE RADIO HBT3 low noise hemt x-band microwave fet infineon rf smd package w-band
Text: 7KH *D$V RXQGU\ +LVWRU\ Since 1975 Infineon Technologies former Siemens Semiconductors) has been engaged in research and development of III-V semiconductor components and circuits. The world‘s first commercially available GaAs MMIC was created by Infineon Technologies in 1981.
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D-81541
smd transistor M30
siemens gaas fet
m30 smd TRANSISTOR
Behet
SIEMENS MICROWAVE RADIO
HBT3
low noise hemt
x-band microwave fet
infineon rf smd package
w-band
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motion sensor doppler
Abstract: microwave RADAR motion sensors doppler sensor microwave motion sensors 24 GHz Microwave Doppler Radar Speed Sensor motion DOPPLER motion sensor doppler effect motion sensor based on doppler effect automatic door opening sensor microwave motion sensor
Text: Motion Sensors 3 Motion Sensors 3.1 Functional Description The KMY modules are microwave radar motion sensors based on the Doppler effect. A high frequency transistor is used as an oscillator. Depending on the operating frequency of 9.35 KMY 10 or 2.45 (KMY 24) GHz a GaAs-FET- or SIEGET (Siemens grounded
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Untitled
Abstract: No abstract text available
Text: SIEMENS AKTIENGESELLSCHAF LOE ]> • 023SbOS G D S m ? S M7D I1SIE6 SIEMENS Transistoren Transistors AIGaAs/GaAs HEMTs AIGaAs/GaAs HEMTs Characteristics TA = 25° C Maximum Ratings E mW 9m mS 70 180 40 ¿> P o Type 70 180 40 -3.0.0 60 180 50 70 200 40
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023SbOS
CGY50
OT-143
CGY40
CLY10
CGY52
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24 GHz Microwave Doppler Radar Speed Sensor
Abstract: microwave motion sensors microwave RADAR motion sensors motion sensor doppler 24 GHz Microwave Sensor motion DOPPLER siemens speed sensor speed sensors Siemens motion sensor based on doppler effect automatic door opening sensor
Text: SIEMENS 3 Motion Sensors 3.1 Functional Description Motion Sensors The KMY modules are microwave radar motion sensors based on the Doppler effect. A high frequency transistor is used as an oscillator. Depending on the operating frequency of 9.35 KMY 10 or 2.45 (KMY 24) GHz a GaAs-FET- or SIEGET (Siemens grounded
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012E3
Abstract: No abstract text available
Text: SIEMENS CF 750 GaAs MMIC • • • • • • Biased Dual Gate GaAs FET For frequencies from 400 MHz to 3 GHz Mixer and amplifier applications in handheld equipment Low power consumption, 2mA operating current typ. Operating voltage range: 3 to 6V Ion-implanted planar structure
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Q62702-F1391
fl535bG5
012E3b4
Rn/50fi
D1555LÃ
fl235b05
fl23Sb05
012E3
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CF739
Abstract: 7S66 1 928 300 599 marking MS "marking ms"
Text: SIEMENS GaAs FET CF 739 Features • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-F1215
OT-143
CF739
7S66
1 928 300 599
marking MS
"marking ms"
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transistor marking 7D
Abstract: marking MS 7d marking "marking ms"
Text: SIEMENS GaAs FET CF 739 Features • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-F1215
OT-143
transistor marking 7D
marking MS
7d marking
"marking ms"
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Untitled
Abstract: No abstract text available
Text: SIEMENS GaAs FET CF 739 Features • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62702-F1215
T-143
E3Sb05
23SLQ5
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GaAs FET cfy 14
Abstract: No abstract text available
Text: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For iow-noise front end amplifiers * For DBS down converters ESO: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Pin Configuration
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Q62702-F1393
Q62702-F1394
GaAs FET cfy 14
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GaAs FET cfy 19
Abstract: S11 SIEMENS z0 607 MA 7a
Text: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters 4 ^ ESD: V5005553 Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20
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V5005553
Q62702-F1393
Q62702-F1394
GaAs FET cfy 19
S11 SIEMENS
z0 607 MA 7a
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cfy 19 siemens
Abstract: cfy 14 siemens CFY 18 siemens gaas fet CFY 19 cfy siemens cfy 25-20 cfy 25-17 Q62703-F106 CFY 10 Q62703-F108
Text: SIEMENS CFY 25 GaAs FET • • • • • Low noise High gain For front-end amplifiers ion-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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VXM05208
Q62703-F106
Q62703-F107
Q62703-F108
0Qfcj75Cn
cfy 19 siemens
cfy 14 siemens
CFY 18
siemens gaas fet
CFY 19
cfy siemens
cfy 25-20 cfy 25-17
CFY 10
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CFY10
Abstract: siemens gaas fet CFY 10 Ga FET marking k CFY 18 cfy 14 siemens
Text: SIEMENS CFY 10 GaAs FET • Low noise • High gain • Suitable up to 14 G Hz • Ion-implanted planar structure • All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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Q62703-F11
fl23SbOS
00b74cÃ
CFY10
fl235fci05
CFY10
siemens gaas fet
CFY 10
Ga FET marking k
CFY 18
cfy 14 siemens
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3tb 50 siemens
Abstract: No abstract text available
Text: SIEMENS CFY 35 GaAs FET • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20 NA Q62702-F1393
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Q62702-F1393
Q62702-F1394
535bD5
D155EÃ
3tb 50 siemens
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siemens gaas fet
Abstract: TMS 1600 marking S221
Text: SIEMENS GaAs FET CLY 2 Datasheet * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * P at V0=3V, f=1.8GHz typ. 23.5 dBm * High efficiency better 55 % out ESD: Type CLY 2 Electrostatic discharge sensitive device,
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Q62702-L96
siemens gaas fet
TMS 1600
marking S221
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SIEMENS 230 92 O
Abstract: siemens gaas fet gaas fet marking a FET GAAS marking a CFY 18 siemens 230 98 O siemens 230 99 o CFY30 S11 SIEMENS
Text: SIEMENS CFY30 GaAs FET Datasheet * Low noise Fmjn= 1.4 dB @ 4 G H z * High gain ( 11.5 dB typ. @ 4 G H z) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz * Ion implanted planar structure * Chip all gold metallization * Chip nitride passivation
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CFY30
Q62703-F97
OT-143
SIEMENS 230 92 O
siemens gaas fet
gaas fet marking a
FET GAAS marking a
CFY 18
siemens 230 98 O
siemens 230 99 o
CFY30
S11 SIEMENS
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Untitled
Abstract: No abstract text available
Text: SIEMENS CFY 30 GaAs FET • • • • • • • Low noise Fmin= 1.4 dB @ 4 GHz High gain (11.5 dB typ. @ 4 GHz) For oscillators up to 12 GHz For amplifiers up to 6 GHz Ion implanted planar structure Chip all gold metallization Chip nitride passivation
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Q62703-F97
OT-143
D15SS7b
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MMIC marking CODE cf
Abstract: ma com 4 pin mmic A7560
Text: SIEMENS CF 750 GaAs MMIC D a t a s h e e t * Biased Dual Gate G a A s FET * For frequencies from 400 M Hz to 3 GHz * Mixer and amplifier applications in handheld equipment * Low power consumption, 2mA operating current typ. * Operating voltage range: 3 to 6V
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VPS05178
Q62702-F1391
Rn/50Q
MMIC marking CODE cf
ma com 4 pin mmic
A7560
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siemens gaas fet
Abstract: E7916 pinFET marking c6 cerec
Text: SIEMENS GaAs FET CFY 25-20 E7916 Preliminary Data • • • • • Low noise High gain Low gate-leakage current All gold metallization For high-speed fibre optic receivers and PIN-FET modules up to 2.4 Gbit/sec VC E05255 ESD: Electrostatic discharge sensitive device, observe handling precautions!
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E7916
E05255
E7916
Q62703-F113
fl23SbOS
D0b7S13
A235b05
00b7Sm
siemens gaas fet
pinFET
marking c6
cerec
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cfy 19 siemens
Abstract: No abstract text available
Text: SIEMENS CFY 19 GaAs FET • • • • • Low noise High gain Ion-implanted planar structure All gold metallization For front ends • For oscillators • For antenna amplifiers from UHF up to 12 GHz • Hi rel/MIL tested upon request ESD: Electrostatic discharge sensitive device, observe handling precautions!
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Q62703-F14
Q62703-F3
G0b7502
00h7S03
cfy 19 siemens
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Siemens A 1458
Abstract: FET marking code 365
Text: SIEMENS CLY15 GaAs FET Datasheet * Power am plifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz 'O p e ra tin g voltage range: 2.7 to 6 V * P ^ at V 0=3V, f= 1.8 GHz typ. 31.5 dBm * Efficiency better 50% s s ~ /7 / d ^ ESD: G Electrostatic discharge sensitive device,
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CLY15
Q62702-L99
Siemens A 1458
FET marking code 365
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CF739 R
Abstract: CF739 siemens gaas fet
Text: 32E D • 023ti3SQ 0G17342 1 H S I P GaAsFET SIEMENS/ SPCL*. SEMICONDS CF739 T 'S I- a S ' • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain
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023ti3SQ
0G17342
CF739
00MHz
23b32ü
Q017347
CF739
CF739 R
siemens gaas fet
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CLY10
Abstract: No abstract text available
Text: SIEMENS CLY10 GaAs FET D a t a s h e e t * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * P „1Tat Vn=3V, f=1,8GHz 28.5 dBm typ. * High efficiency better 55 % 3 p k S 2 1 ESD: V PSC5 I6 J
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CLY10
Q62702-L94
CLY10
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siemens gaas fet
Abstract: gaas fet marking J
Text: SIEMENS CLY 5 GaAs FET D a t a s h e e t * Pow er amplifier for mobile phones * For frequencies from 400 M H z to 2.5 G H z * W ide operating voltage range: 2.7 to 6 V * at V 0=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 % X 2 1 ESD: V P S0S163
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S0S163
Q62702-L90
615ms
i77mS-
417ps
siemens gaas fet
gaas fet marking J
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5N521
Abstract: CFY30
Text: SIEMENS CFY 30 GaAs FET F eatures • Low noise /-'mm = 1.4 d B at 4 G Hz • High gain (11.5 dB typ. a l 4 GHz) • For o scillators up to 12 G Hz • For am p lifiers up to 6 GHz • Io n -im planted p lanar structure • C hip all gold m etallization
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