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    SIEMENS MOSFET BUZ Search Results

    SIEMENS MOSFET BUZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    SIEMENS MOSFET BUZ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Spice Model for TMOS Power MOSFETs

    Abstract: scr spice model n mosfet depletion pspice model parameters transistor SMD making code 3f MOTOROLA smd SCR 707n AN1043 1E12 ABM11 BUZ103S
    Text: A Hierarchical Cross-Platform Physics Based MOSFET Model for SPICE and SABER By Jon Mark Hancock Siemens Microelectronics ABSTRACT A physics based MOSFET subcircuit model has been developed and implemented for SABER and several SPICE platforms, including PSPICE, IS-SPICE, and S-SPICE. The model is hierarchical in


    Original     		PDF

    SIEMENS 800

    Abstract: 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n
    Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) ros (on) (Ohms) Po Max ON) 9FS VGS(th) C|S8 •Oper Max Max tr Max tf Min Max Max W (V) (F) (8) (8) (°0 Package Style MOSFETs, N-Channel Enhancement-Type (Cont'd) . . .5 . .10 BUZ308 BUZ80


    Original     		O-220AB O-218 O-204 204AC O-238AA SIEMENS 800 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n PDF

    buz350 mosfet

    Abstract: DVD120T efm1394m160 SOT23 34N 2N6960 DVD020S MTH30N20 20/SGSP577 EFM139 MTE60N20
    Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max (A) Po Max (W) ros (on) (Ohms) gFS Min (S) VGS(th) Clsa Max (V) Max JF) tr Max (s) tf Max (s) Toper Max eC) Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 IAFJ240 BUZ37 BUZ31 BUZ34


    Original     		2100p 1800p IAFJ240 BUZ37 BUZ31 BUZ34 IXTL15N20 MTH15N20 MTM15N20 buz350 mosfet DVD120T efm1394m160 SOT23 34N 2N6960 DVD020S MTH30N20 20/SGSP577 EFM139 MTE60N20 PDF

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 PDF

    B81121 X2 mkt

    Abstract: B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2
    Text: Version 1.1 , March 2001 Application Note AN-TDA16888-0-010323 TDA 16888: Multioutput Single Transistor Forward Converter 150W / 100kHz Author: Michael Herfurth Published by Infineon Technologies AG http://www.infineon.com Power Management & Supply N e v e r


    Original     		AN-TDA16888-0-010323 100kHz V/18A; -12V/1A; V/100mA Room14J1 Room1101 B81121 X2 mkt B81121 X2 mkp AN-TDA16888-0-010323 ELKO capacitors MKT .22K 250V X2 EPCOS 230 00 O ELKO CAPACITOR 63v 2,2 elko capacitor TDA 16888 B81121 X2 PDF

    c 4692 transistor

    Abstract: P-DIP-18 siemens FLH SPH4692 TDA 4605-3 sph 4692 c 4692 transistor diagram v3h diode
    Text: SIEMENS Siemens Power Hybrid for SMPS SPH 4692 Preliminary Data Bipolar 1C Features • • • • • • • • Fold-back characteristics provides overload protection for external components Burst operation under secondary short-circuit condition implemented


    OCR Scan     		16min 25max UED03870 ued03948 15max 15min 15max c 4692 transistor P-DIP-18 siemens FLH SPH4692 TDA 4605-3 sph 4692 c 4692 transistor diagram v3h diode PDF

    sso8 package

    Abstract: MOSFET P SOT-23 BUZ350 BS0615NV BUZ345 SOT323 MOSFET P tda 2850 n-channel 250V power mosfet smd buz341 BSS138N
    Text: L o w Vo l t a g e I C s – D i s c r e t e s : O p t i M O S , O p t i M O S ® 2 Pow e r Ma n a g e m e n t & Su p p l y : D C / D C Se l e c t i o n Gu i d e w w w. i n f i n e o n . c o m / p o w e r Never stop thinking. Introduction DC/DC CONVERSION plays a critical role in todays’ applications such as


    Original     		B152-H8203-X-X-7600 sso8 package MOSFET P SOT-23 BUZ350 BS0615NV BUZ345 SOT323 MOSFET P tda 2850 n-channel 250V power mosfet smd buz341 BSS138N PDF

    of mosfet BUZ 384

    Abstract: simple SL 100 NPN Transistor leistungstransistoren ANALOG DEVICES bar code on the lable test transistors Siemens Dioden fgs npn
    Text: SIEMENS Technische Angaben Technical Information 1 Übersicht 1 Overview 1.1 SIPMOS-Leistungstransistoren 1.1 SIPMOS Power Transistors Leistungstransistoren im Bereich 5 0 V . 1000 V und 10 m fi . 8 Q Power transistors in the 50 V to 1000 V and 10 mQ to 8 Q range


    OCR Scan     		SIL00001 SIL00002 MILSTD-883, of mosfet BUZ 384 simple SL 100 NPN Transistor leistungstransistoren ANALOG DEVICES bar code on the lable test transistors Siemens Dioden fgs npn PDF

    0119A

    Abstract: 230V ac to 9V dc converter circuit 220V ac to 96V dc converter circuit zero crossing detector ic with 230v 220V ac to 96V dc converter 230v ac dc smps circuit 230v dc to 440v ac mosfet ac 220v to dc 3v converter rm14 N67 230V AC to 3V DC ic
    Text: SIEM ENS AT2 9402 E Application Note Automotive/Transportation/Industrial Electronics Power Factor Controller TDA 4862 Applications M. Herfurth Applications: Description: Power Factor Preconverter for lamp ballasts and switched mode power supplies with wide


    OCR Scan     		268mA 11Vpp 10VPP 0V-270V 33Vpp pfc94067 0119A 230V ac to 9V dc converter circuit 220V ac to 96V dc converter circuit zero crossing detector ic with 230v 220V ac to 96V dc converter 230v ac dc smps circuit 230v dc to 440v ac mosfet ac 220v to dc 3v converter rm14 N67 230V AC to 3V DC ic PDF

    siemens BSM b2

    Abstract: smd zener GD AX transistor fp 1016 79 p Siemens anwendungsbeispiele siemens igbt BSM 25 gb 100 d BTS412A DIODE ZENER BZW 04 TRANSISTOR EN SMD TZ N-Kanal FET BTS542R
    Text: Technische Angaben SIPMOS-Leistungstransistoren und Dioden SIPMOS-Leistungstransistoren Transistoren im Bereich 50 V . 1000 V, 1,5 A . 60 A und 18 mQ . 8 Q. P -K a n a l N-Kanal Produktpalette • • • • • N- und P-Kanal-Anreicherungstypen FREDFET


    OCR Scan     		B152-B6299-X-X-7400 siemens BSM b2 smd zener GD AX transistor fp 1016 79 p Siemens anwendungsbeispiele siemens igbt BSM 25 gb 100 d BTS412A DIODE ZENER BZW 04 TRANSISTOR EN SMD TZ N-Kanal FET BTS542R PDF

    TDA 16822

    Abstract: 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3
    Text: ICs: SMPS, CoolSET TM TM – D i s c r e t e s : C o o l M O S , I G B T, t h i n Q ! Pow e r Ma n a g e m e n t & Su p p l y : : AC / D C Se l e c t i o n Gu i d e www.infineon.com/power Never stop thinking. TM Introduction TODAY’S MODERN LIFE style leads to a fast growing energy requirement as


    Original     		B152-H8202-X-X-7600 TDA 16822 04N60C3 equivalent ICE1QS01 equivalent tda 3050 tda 1040 TDA 16846 TDA 16888 1QS01 07N60C3 mosfet transistor 04n60c3 PDF

    BUP314

    Abstract: BUP307 igbt types siemens bup314 BUP401 BUZ334 BUZ MOSFET MOSFET welding INVERTER 334 mosfet flyback inverter welding
    Text: APPLICATIONS POWER SEMICONDUCTORS Andreas Bachofner ● Michael Herfurth ● Michael Schmitt High-speed IGBTs: Fast switching at an attractive price Developed from secondgeneration IGBTs, highspeed IGBTs insulated gate bipolar transistors are particularly economical for


    Original     		O-220 O-218 BUP314 BUP307 igbt types siemens bup314 BUP401 BUZ334 BUZ MOSFET MOSFET welding INVERTER 334 mosfet flyback inverter welding PDF

    BUZ MOSFET

    Abstract: Mosfet 1 cell switch low voltage low resistance SIEMENS MOSFET application
    Text: Higher Cell Density, More Rugged Design MOS-based power semiconductors in S-FET technology can switch currents from a few milliamperes up to several hundred amperes at a voltage of 55 V. Extremely short source lengths make them commutation-proof and more resistant to avalanche breakdowns. At the


    Original     		T0-220 OT-223 P-DS0-28 mid-1997. O-220 BUZ MOSFET Mosfet 1 cell switch low voltage low resistance SIEMENS MOSFET application PDF

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
    Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package


    Original     		615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D PDF

    siemens dioden

    Abstract: leistungstransistoren thyristor capacitive discharge ignition Leistungsdiode car ignition circuit diagram of mosfet BUZ 384 car ignition chip die npn transistor Siemens Halbleiter
    Text: Technische Angaben Erläuterungen der Datenblattwerte Qualität und Zuverlässigkeit Technical Inform ation Explanation o f Data Sheet Parameters Q uality and R eliability SIEM ENS 1 Übersicht 1.1 SIPM OS-Leistungstransistoren Leistungstransistoren im Bereich 5 0 V .


    OCR Scan     		SIL00001 MILSTD-883, siemens dioden leistungstransistoren thyristor capacitive discharge ignition Leistungsdiode car ignition circuit diagram of mosfet BUZ 384 car ignition chip die npn transistor Siemens Halbleiter PDF

    BUZ MOSFET

    Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
    Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8


    OCR Scan     		615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S PDF

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR PDF

    S 170 MOSFET TRANSISTOR

    Abstract: 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book
    Text: Low Voltage ICs – Discretes: OptiMOS , OptiMOS ®2 Power Management & Supply DC/DC Selection Guide www.infineon.com/power May 2006 Introduction D C / D C C O N V E R S I O N plays a critical role in today’s applications such as desktop and notebook computers, consumer equipment, e.g. DVD players and


    Original     		B152-H8203-G4-X-7600 S 170 MOSFET TRANSISTOR 8203 dual mosfet S 170 MOSFET SOT323 MOSFET P MOSFET SWITCHING FREQUENCY IPS09N03LA P-channel power mosfet SO-8 TDA21102 mosfet all mosfet equivalent book PDF

    VN1210N5

    Abstract: BR 115N sfn02202 sfn02802 sfn02812 RRF530
    Text: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max Of) (A) rDs (on) (Ohms) Po Max (W) 9FS Min (S) V GS<tri) Max (V) Cin Max tr Max tf Max (P) (8) (8) T Opw Max Package Style (°C) MOSFETs, N-Channel Enhancement-Type (Cont'd) . . . . 5 • . . .10


    Original     		RRF120 RRF520 UFN132 IRrj120 RRF522 SFN02802 SFN02812 SFN106A3 YTF520 IRF120 VN1210N5 BR 115N sfn02202 RRF530 PDF

    v3h diode

    Abstract: TDA 4605-3 sph4692 71C452.V1-6 18 pin flyback transformer 4605-3 AC Motor soft start IC c 4692 P-DIP-18 "12-pin" flyback smps
    Text: Siemens Power Hybrid for SMPS SPH 4692 Preliminary Data Bipolar IC Features ● Fold-back characteristics provides overload protection for ● ● ● ● ● ● ● external components Burst operation under secondary short-circuit condition implemented Protection against open or a short of the control loop


    Original     		P-DIP-18-4 v3h diode TDA 4605-3 sph4692 71C452.V1-6 18 pin flyback transformer 4605-3 AC Motor soft start IC c 4692 P-DIP-18 "12-pin" flyback smps PDF

    siemens automotive relay dc 12v

    Abstract: Control of Starter-generator BTS560P gasoline direct injection BTS660P TO263 siemens functional profet abs sensor bmw 300W AMPLY BTS640S2 BTS723
    Text: 18th Conference ‘Vehicle Electronics’ 16/17 June 1998, Munich Semiconductor technologies and switches for the new automotive electrical system Semiconductor Technologies and Switches for new Automotive Electrical Systems Dr. Alfons Graf, Siemens AG, HL PS TM, 81617 Munich, Tel. +49 89/636-22805


    Original     		32-bit de/semiconductor/products/36/3673 HDT98E siemens automotive relay dc 12v Control of Starter-generator BTS560P gasoline direct injection BTS660P TO263 siemens functional profet abs sensor bmw 300W AMPLY BTS640S2 BTS723 PDF

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40 PDF

    BTS560P

    Abstract: mercedes SPT170 BCD Schalter BTS660P TO263 POWER SUPPLY BTS SIEMENS siemens automotive relay dc 12v to218 BTS640S2 SPT75
    Text: 18. Tagung ‘Elektronik im Kraftfahrzeug’ 16./17. Juni 1998, München Halbleiter-Technologien und Schalter für das neue Kfz-Bordnetz Halbleiter-Technologien und Schalter für neue Kfz-Bordnetze Dr. Alfons Graf, Siemens AG, HL PS TM, 81617 München, Tel. 089/636-22805


    Original     		2V/14V, 32-bit de/semiconductor/products/36/3673 HDT98D BTS560P mercedes SPT170 BCD Schalter BTS660P TO263 POWER SUPPLY BTS SIEMENS siemens automotive relay dc 12v to218 BTS640S2 SPT75 PDF

    MTBF SIEMENS s7-1200

    Abstract: S7-1200 SIEMENS s7 1200 CM 1241 siemens Siemens s7 1200 manual 6ES7 232-4HB32-0XB0 S7-200 cpu 214 3ZX1012-0R 6ES7 232-4HB30-0XB0 S7-1200 service manual
    Text: 3 Siemens AG 2013 SIMATIC S7-1200 3/2 Introduction 3/4 3/4 3/8 3/12 3/16 3/20 Central processing units CPU 1211C CPU 1212C CPU 1214C CPU 1215C CPU 1217C 3/23 3/23 3/27 3/31 3/36 SIPLUS central processing units SIPLUS CPU 1211C SIPLUS CPU 1212C SIPLUS CPU 1214C


    Original     		S7-1200 1211C 1212C 1214C 1215C 1217C MTBF SIEMENS s7-1200 S7-1200 SIEMENS s7 1200 CM 1241 siemens Siemens s7 1200 manual 6ES7 232-4HB32-0XB0 S7-200 cpu 214 3ZX1012-0R 6ES7 232-4HB30-0XB0 S7-1200 service manual PDF