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    Vishay Siliconix SIHB16N50C-E3

    MOSFET N-CH 500V 16A D2PAK
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    DigiKey SIHB16N50C-E3 Tube 1,000
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    Quest Components SIHB16N50C-E3 640
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    SIHB16N50C-E3 6
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    SIHB16 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHB16N50C-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 16A D2PAK Original PDF

    SIHB16 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved


    Original     		SiHP16N50C SiHB16N50C SiHF16N50C O-220AB O-220 2002/95/EC O-263) SiHP16N50C-E3 PDF

    731 MOSFET

    Abstract: AN609 SiHP16N50C SiHF
    Text: SiHP16N50C_RC, SiHB16N50C_RC, SiHF16N50C_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiHP16N50C SiHB16N50C SiHF16N50C AN609, O220AB, 14-Apr-10 731 MOSFET AN609 SiHF PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved


    Original     		SiHP16N50C SiHB16N50C SiHF16N50C O-220AB O-220 2002/95/EC O-263) SiHP16N50C-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved


    Original     		SiHP16N50C SiHB16N50C SiHF16N50C O-220AB O-220 2002/95/EC O-263) SiHP16N50C-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 500 V, 16 A with RDS on max. = 380 mW at VGS = 10 V AND TEC I INNOVAT O L OGY SiHP16N50C-E3, SiHF16N50C-E3, SiHB16N50C-E3, SiHG16N50C-E3 N HN POWER MOSFETs O 19 62-2012 High-Voltage MOSFETs - 500 V N-Channel with Gen. 6.4 Cell Technology


    Original     		SiHP16N50C-E3 SiHF16N50C-E3 SiHB16N50C-E3 SiHG16N50C-E3 13-Jun-11 VMN-PT0246-1208 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved


    Original     		SiHP16N50C SiHB16N50C SiHF16N50C O-220AB O-220 2002/95/EC O-263) SiHB16N50C-E3 SiHF16N50C-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved


    Original     		SiHP16N50C SiHB16N50C SiHF16N50C O-220AB O-220 2002/95/EC O-263) SiHB16N50C-E3 SiHF16N50C-E3 PDF

    SiHP16N50C

    Abstract: ktp12 MJ-38 SIHF16N50C-E3
    Text: SiHP16N50C, SiHB16N50C, SiHF16N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved


    Original     		SiHP16N50C SiHB16N50C SiHF16N50C O-220AB O-220 2002/95/EC O-263) ktp12 MJ-38 SIHF16N50C-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved


    Original     		SiHP16N50C SiHB16N50C SiHF16N50C O-220AB O-220 2002/95/EC O-263) SiHP16N50C-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP16N50C, SiHB16N50C, SiHF16N50C www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) () VGS = 10 V 0.38 Qg (Max.) (nC) • 100 % Avalanche Tested 68 Qgs (nC) • Gate Charge Improved


    Original     		SiHP16N50C SiHB16N50C SiHF16N50C O-220AB O-220 2002/95/EC O-263) SiHB16N50C-E3 SiHF16N50C-E3 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . HIGH-VOLTAGE POWER MOSFETs Devices Use Vishay Planar Cell Technology to Minimize On-Resistance and Withstand High Energy Pulses KEY BENEFITS • 16 A, 500 V, RDS on max. = 380 mW at VGS = 10 V • Low gate charge: Qg max. = 68 nC


    Original     		SiHP16 SiHF16 SiHB16 SiHG16 2002/95/EC SiHP16N50C-E3 SiHF16N50C-E3 SiHB16N50C-E3 VMN-PT0246-1010 PDF