SIHFI9630G Search Results

SIHFI9630G Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
irfi9630g Abstract: SiHFI9630G SiHFI9630G-E3 Text: IRFI9630G, SiHFI9630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFI9630G, SiHFI9630G O-220 18-Jul-08 irfi9630g SiHFI9630G-E3	PDF
AN609 Abstract: IRFI9630G SiHFI9630G Text: IRFI9630G_RC, SiHFI9630G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	IRFI9630G SiHFI9630G AN609, 11-May-10 AN609	PDF
Untitled Abstract: No abstract text available Text: IRFI9630G, SiHFI9630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFI9630G, SiHFI9630G O-220 12-Mar-07	PDF
SiHFI9630G-E3 Abstract: IRFI9630G SiHFI9630G Text: IRFI9630G, SiHFI9630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFI9630G, SiHFI9630G O-220 18-Jul-08 SiHFI9630G-E3 IRFI9630G	PDF
IRFI9630G Abstract: SiHFI9630G SiHFI9630G-E3 Text: IRFI9630G, SiHFI9630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFI9630G, SiHFI9630G O-220 11-Mar-11 IRFI9630G SiHFI9630G-E3	PDF
Untitled Abstract: No abstract text available Text: IRFI9630G, SiHFI9630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFI9630G, SiHFI9630G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
IRFI9630G Abstract: No abstract text available Text: IRFI9630G, SiHFI9630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFI9630G, SiHFI9630G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFI9630G	PDF
Untitled Abstract: No abstract text available Text: IRFI9630G, SiHFI9630G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Isolated Package • High Voltage Isolation = 2.5 kVRMS (t = 60 s, f = 60 Hz) • Sink to Lead Creepage Distance = 4.8 mm • P-Channel • Dynamic dV/dt Rating • Low Thermal Resistance	Original	IRFI9630G, SiHFI9630G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF