Untitled
Abstract: No abstract text available
Text: IRFR010, SiHFR010 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration Single DESCRIPTION D The power MOSFET technology is the key to Vishay’s
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Original
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IRFR010,
SiHFR010
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G Low Drive Current Surface Mount Fast Switching Ease of Paralleling
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Original
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IRFR010,
SiHFR010
O-252)
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling
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Original
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IRFR010,
SiHFR010
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling
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Original
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IRFR010,
SiHFR010
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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IRFR9012
Abstract: No abstract text available
Text: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling
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Original
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IRFR010,
SiHFR010
2002/95/EC
11-Mar-11
IRFR9012
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PDF
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MOSFET 7121
Abstract: AN609 IRFR010 SiHFR010 1712-1
Text: IRFR010_RC, SiHFR010_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Original
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IRFR010
SiHFR010
AN609,
2433m
0564m
1737u
9554m
2279m
7246m
29-Oct-10
MOSFET 7121
AN609
1712-1
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PDF
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IRFR9012
Abstract: No abstract text available
Text: IRFR010, SiHFR010 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration Single DESCRIPTION D The power MOSFET technology is the key to Vishay’s
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Original
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IRFR010,
SiHFR010
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
IRFR9012
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PDF
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S10 diode
Abstract: IRFR9012 IRFR010 IRFU9012 SiHFR010 SiHFR010-E3
Text: IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 50 RDS(on) () VGS = 10 V 0.20 Qg (Max.) (nC) 10 Qgs (nC) 2.6 Qgd (nC) 4.8 Configuration D DPAK (TO-252) G G S Low Drive Current Surface Mount Fast Switching Ease of Paralleling
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Original
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IRFR010,
SiHFR010
O-252)
2002/95/EC
18-Jul-08
S10 diode
IRFR9012
IRFR010
IRFU9012
SiHFR010-E3
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PDF
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