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    SIHP12N50 Price and Stock

    Vishay Siliconix SIHP12N50C-E3

    MOSFET N-CH 500V 12A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHP12N50C-E3 Tube 1,000 1
    • 1 $5.54
    • 10 $3.695
    • 100 $5.54
    • 1000 $2.1
    • 10000 $2.1
    		Buy Now

    Vishay Siliconix SIHP12N50E-GE3

    MOSFET N-CH 500V 10.5A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHP12N50E-GE3 Tube 1,000 1
    • 1 $2.59
    • 10 $2.59
    • 100 $2.59
    • 1000 $0.84765
    • 10000 $0.75
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    Vishay Siliconix SIHP12N50E-BE3

    N-CHANNEL 500V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHP12N50E-BE3 Tube 836 1
    • 1 $2.59
    • 10 $2.59
    • 100 $2.59
    • 1000 $0.91996
    • 10000 $0.91996
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    Vishay Intertechnologies SIHP12N50E-GE3

    N-CHANNEL 500V - Tape and Reel (Alt: SIHP12N50E-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHP12N50E-GE3 Reel 18 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.75
    • 10000 $0.70588
    		Buy Now
    Mouser Electronics SIHP12N50E-GE3 3,687
    • 1 $1.69
    • 10 $1.07
    • 100 $0.961
    • 1000 $0.755
    • 10000 $0.75
    		Buy Now
    Newark SIHP12N50E-GE3 Bulk 32 1
    • 1 $0.688
    • 10 $0.688
    • 100 $0.688
    • 1000 $0.688
    • 10000 $0.688
    		Buy Now
    TTI SIHP12N50E-GE3 Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.81
    • 10000 $0.75
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    TME SIHP12N50E-GE3 489 1
    • 1 $1.64
    • 10 $1.48
    • 100 $1.18
    • 1000 $1.09
    • 10000 $1.09
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    EBV Elektronik SIHP12N50E-GE3 19 Weeks 50
    • 1 -
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    • 10000 -
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    Vishay Intertechnologies SIHP12N50E-BE3

    N-CHANNEL 500V - Rail/Tube (Alt: SIHP12N50E-BE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHP12N50E-BE3 Tube 18 Weeks 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.75
    • 10000 $0.72
    		Buy Now
    Mouser Electronics SIHP12N50E-BE3 1,591
    • 1 $2.06
    • 10 $1.28
    • 100 $1.07
    • 1000 $0.791
    • 10000 $0.75
    		Buy Now
    Newark SIHP12N50E-BE3 Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.918
    • 10000 $0.822
    		Buy Now
    TTI SIHP12N50E-BE3 Tube 2,000 50
    • 1 -
    • 10 -
    • 100 $1.06
    • 1000 $0.78
    • 10000 $0.74
    		Buy Now
    Find more SIHP12N50 price and stock on Findchips.com

    SIHP12N50 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHP12N50C-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 12A TO-220AB Original PDF
    SIHP12N50E-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 10.5A TO-220AB Original PDF

    SIHP12N50 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SiHP12N50C

    Abstract: ktp12
    Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved


    Original     		SiHP12N50C SiHB12N50C SiHF12N50C O-220AB O-220 2002/95/EC O-263) ktp12 PDF

    SiHF

    Abstract: AN609 SiHP12N50C
    Text: SiHP12N50C_RC, SiHB12N50C_RC, SiHF12N50C_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		SiHP12N50C SiHB12N50C SiHF12N50C AN609, O220AB, 16-Apr-10 SiHF AN609 PDF

    SiHP12N50C

    Abstract: sihb12n50c-e3
    Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved


    Original     		SiHP12N50C SiHB12N50C SiHF12N50C O-220AB O-220 2002/95/EC O-263) sihb12n50c-e3 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved


    Original     		SiHP12N50C SiHB12N50C SiHF12N50C O-220AB O-220 2002/95/EC O-263) PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved


    Original     		SiHP12N50C SiHB12N50C SiHF12N50C O-220AB O-220 2002/95/EC O-263) PDF

    BY 220 diode

    Abstract: SiHF
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 500 V with Max RDS on of 0.555 Ω at VGS = 10 V AND TEC I INNOVAT O L OGY SiHP12N50C, SiHB12N50C, SiHF12N50C N HN POWER MOSFETs O 19 62-2012 High-Voltage MOSFETs - 500 V N-Channel Power MOSFETs in TO-220AB, TO-220 FULLPAK, and D2PAK Packages


    Original     		SiHP12N50C SiHB12N50C SiHF12N50C O-220AB, O-220 SiP12N50C SiB12N50C SiF12N50C 26-Apr-10 VMN-PT0217-1208 BY 220 diode SiHF PDF

    siliconix mosfet marking to-220

    Abstract: No abstract text available
    Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved


    Original     		SiHP12N50C SiHB12N50C SiHF12N50C O-220AB O-220 2002/95/EC O-263) SiHP12N50C-E3 siliconix mosfet marking to-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 V RDS(on) (Ω) VGS = 10 V 0.555 Qg (Max.) (nC) 48 Qgs (nC) 12 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved


    Original     		SiHP12N50C SiHB12N50C SiHF12N50C O-220AB O-220 2002/95/EC O-263) PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHP12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM) Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V Qg max. (nC) • • • • • 0.380 50 Qgs (nC) 6 Qgd (nC) 10


    Original     		SiHP12N50E O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Group: Vishay Siliconix, MOSFETs / January 2015 Author: Philip Zuk Tel: 1 408-970-5298 E-mail: [email protected] 500 V High-Voltage MOSFETs Built on Gen II Super Junction Technology Feature Extremely Low Conduction and Switching Losses Product Benefits:


    Original     		O-220, O-252, O-263, O-247AC, O-220 SiHB12N50E SiHA12N50E SiHP15N50E SiHB15N60E SiHA15N50E PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    SiHP12N50

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . HIGH-VOLTAGE POWER MOSFETs FEATURES • Maximum RDS on of 0.555 Ω at VGS = 10 V • Low gate charge, Qg max = 48 nC • RDS(on) * Qg FOM of 26.64 Ω-nC • 100 % avalanche tested • Improved Trr / Qrr • Compliant to RoHS Directive 2002/95/EC


    Original     		SiHP12N50 SiHB12N50 SiHF12N50 O-220AB, O-220 2002/95/EC SiHP12N50C SiHB12N50C SiHF12N50C PDF