Inselek
Abstract: Boeing NOW JERSEY SEMICONDUCTOR PHYSICS Mueller Electric Company soi switches 2003 soi switches cmos transistor 1972
Text: W hat is Silicon-on-Sapphire? Silicon-on-Sapphire SOS is one of the siliconon-insulator (SOI) semiconductor manufacturing technologies. In fact, SOS is the first of the SOI technologies. SOS is formed by depositing a thin layer of silicon onto a sapphire wafer at high temperature.
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stiffness diaphragm pressure sensor
Abstract: diaphragm TP301 tunnel sensor Force Transducer sensitivity resolution
Text: Miniature silicon-on-insulator pressure transducer for absolute pressure measurement at 260˚C TP 301 Model 8540 miniature pressure transducer for absolute pressure measurement at 260˚C Abstract A miniature, silicon-on-insulator absolute pressure The present paper will describe a pressure transducer
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TP301
stiffness diaphragm pressure sensor
diaphragm
TP301
tunnel sensor
Force Transducer sensitivity resolution
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MPC7448
Abstract: MPC7447 MPC7448 MPC7447 MPC7447A sfx2
Text: High-Performance Processors MPC7448 Host Processor Built on Power Architecture Technology The MPC7448 is the first discrete MPC7448 Block Diagram high-performance processor, built on Power Architecture™ technology, manufactured on 90 nanometer silicon-on-insulator SOI
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MPC7448
MPC7448
MPC7448FS
MPC7447 MPC7448
MPC7447
MPC7447A
sfx2
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BP050-0024UJ03
Abstract: F923 PE4309 acg-6
Text: Product Specification PE4309 50 Ω RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHz Product Description The PE4309 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance
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PE4309
PE4309
BP050-0024UJ03
F923
acg-6
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PE4309
Abstract: BP050-0024UJ03
Text: Preliminary Specification PE4309 50 Ω RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHz Product Description The PE4309 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance
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PE4309
PE4309
BP050-0024UJ03
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BP050-0024UJ03
Abstract: 20 pins qfn 4x4 footprint
Text: Product Specification PE4309 50 Ω RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHz Product Description The PE4309 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance
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PE4309
PE4309
BP050-0024UJ03
20 pins qfn 4x4 footprint
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Untitled
Abstract: No abstract text available
Text: Product Specification PE4309 50 RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHz Product Description The PE4309 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance
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PE4309
PE4309
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Untitled
Abstract: No abstract text available
Text: Product Specification PE4309 50 Ω RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHz Product Description The PE4309 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance
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PE4309
PE4309
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SAE J2411
Abstract: rain sensor BOSCH for car application steering controlled headlight report ecu Bosch ICs car ecu microprocessors 24 v temic ecu list of sensors used in bmw car BOSCH ECU microcontroller microprocessors used in car ecus siemens ecu VDO
Text: Semiconductors Philips - the vital link in the interconnected car Semiconductors Advancing silicon for automotive processes Connecting flexible intelligence in the car Philips’ SOI Silicon-on-Insulator technology is the Meeting the comfort, convenience, safety and security demands of
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MPC7448
Abstract: MPC7447 MPC7448 MPC7447 MPC7447A
Text: High-Performance Processors MPC7448 PowerPC Processor The MPC7448 is the first discrete high- MPC7448 POWERPC® PROCESSOR BLOCK DIAGRAM ® performance PowerPC processor manufactured on 90 nanometer silicon-on-insulator SOI Completion Instruction Fetch
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MPC7448
MPC7448
MPC7448POWPCFS
MPC7447 MPC7448
MPC7447
MPC7447A
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bsim3
Abstract: IMD2 transistor metal oxide in capacitor "X-Fab" Core cell library transistor ag metal sheet thickness sensor 45 nm library breakdown gate oxide
Text: 1.0 µm SOI Process 1.0 µm Silicon-On-Insulator Technology 1.0 µm Non-fully Depleted SOI Technology with: Applications 1000 nm Box Oxide - Dielectric Isolated Mixed-Signal multi voltage systems 250 nm Active Silicon 25 nm Gate Oxide Thickness - High Temperature
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Untitled
Abstract: No abstract text available
Text: Product Specification PE42650A SP3T High Power UltraCMOS RF Switch 30 MHz - 1000 MHz Product Description ig de s The PE42650A is manufactured on Peregrine’s UltraCMOS™ process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance
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PE42650A
PE42650A
32-lead
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Untitled
Abstract: No abstract text available
Text: Product Specification PE4305 50 Ω RF Digital Attenuator 5-bit, 15.5 dB, DC – 4.0 GHz Product Description de s ig The PE4305 is manufactured on Peregrine’s UltraCMOS process, a patented variation of silicon-on-insulator SOI technology on a sapphire substrate, offering the performance
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PE4305
PE4305
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HXSRD01
Abstract: 10Gb trivor smd transistor M21 Lanes PRBS31 w21 transistor smd 8B10B S150 honeywell material spec microcircuit w18 smd transistor
Text: HXSRD01 Trivor SERDES Quad Redundant Transceiver Radiation Hardened Features • Fabricated on S150 Silicon On Insulator SOI CMOS ■ ■ 150 nm Process (Leff = 110 nm) 4 Channel (Quad) Transceiver with Redundant Transmitters ■ Channel Data Rates to 3.1875Gb/s
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HXSRD01
1875Gb/s
10Gb/s
1X106
1x10-12
2x10-12
1x1014
1x1010
1x1012
10Gb trivor
smd transistor M21
Lanes
PRBS31
w21 transistor smd
8B10B
S150
honeywell material spec microcircuit
w18 smd transistor
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Untitled
Abstract: No abstract text available
Text: CPC7220 Low Charge Injection, 8-Channel High Voltage Analog Switch INTEGRATED CIRCUITS DIVISION Features Description • Processed with BCDMOS on SOI Silicon On Insulator • Flexible High Voltage Supplies up to VPP-VNN=200V • DC to 10MHz Analog Signal Frequency
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10MHz
-60dB
CPC7220
DS-CPC7220-R01
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Untitled
Abstract: No abstract text available
Text: CPC7232 8-Channel HV Analog Switch with Built-in Bleeder Resistors INTEGRATED CIRCUITS DIVISION Features Description • Processed with BCDMOS on SOI Silicon on Insulator • Flexible High Voltage Supplies up to VPP-VNN=200V • Internal Output Bleeder Resistors
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10MHz
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CPC7232
DS-DS-CPC7232-R01
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CPC7220
Abstract: CPC7220W CPC7221
Text: CPC7220/CPC7221 Low Charge Injection 8-Channel High Voltage Analog Switch Description • Processed with BCDMOS on SOI Silicon On Insulator • DC to 10MHz analog signal frequency • Surface mount package available • Low quiescent power dissipation (< 1µA typical)
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CPC7220/CPC7221
10MHz
CPC7220
CPC7221,
DS-CPC7220/CPC7221-R00B
CPC7220W
CPC7221
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K0220
Abstract: b0930 lqfp48 land pattern K1160 CPC7232
Text: CPC7232 8-Channel HV Analog Switch with Built-in Bleeder Resistors INTEGRATED CIRCUITS DIVISION PRELIMINARY Features Description • Processed with BCDMOS on SOI Silicon on Insulator • Flexible High Voltage Supplies up to VPP-VNN=200V • Internal Output Bleeder Resistors
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CPC7232
CPC7232
DS-DS-CPC7232-R00J
K0220
b0930
lqfp48 land pattern
K1160
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CPC7220
Abstract: CPC7220W
Text: CPC7220 Low Charge Injection 8-Channel High Voltage Analog Switch Features Description • Processed with BCDMOS on SOI Silicon On Insulator • DC to 10MHz analog signal frequency • Surface mount package available • Low quiescent power dissipation (< 1µA typical)
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CPC7220
10MHz
CPC7220
DS-CPC7220-R00E
CPC7220W
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Untitled
Abstract: No abstract text available
Text: CPC7601 Low Charge Injection, 16-Channel High Voltage Analog Switch INTEGRATED CIRCUITS DIVISION Features Description • Processed with BCDMOS on SOI Silicon On Insulator • Flexible High Voltage Supplies up to VPP-VNN=200V • DC to 10MHz Analog Signal Frequency
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10MHz
16-Channel
CPC7601
DS-CPC7601-R02
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silicon on insulator
Abstract: No abstract text available
Text: CPC7220 Low Charge Injection 8-Channel High Voltage Analog Switch Features Description • Processed with BCDMOS on SOI Silicon On Insulator • DC to 10MHz analog signal frequency • Surface mount package available • Low quiescent power dissipation (< 1µA typical)
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CPC7220
10MHz
CPC7220
DS-CPC7220-R00H
silicon on insulator
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Untitled
Abstract: No abstract text available
Text: Honeywell Aerospace Electronics HX6356 32K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |j.m Process (Left= 0.6 (im) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(S i02)
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HX6356
1x106rad
1x101
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Untitled
Abstract: No abstract text available
Text: HMXMUX01 8-Channel Analog Multiplexer Radiation Hardened Features ▪ Fabricated on Silicon On Insulator SOI CMOS Technology ▪ SOI4 Process (Leff = 0.8 um) ▪ Total Dose Hardness 300k rad (Si) ▪ Dose Rate Upset Hardness 1x109 rad(Si)/s ▪ Dose Rate Survivability
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HMXMUX01
1x109
1x1012
1x1014
120ns
HMXMUX01
ADS-14199
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • • Listed on SMD #5962-96840 Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 jam Process (Leff = 0.6 ^m) • Total Dose Hardness through 1x106 rad (S i0 2)
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HX84050
1x106
1x101
1x109
0GD1755
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