SILICON RF TRANSISTOR S PARAMETERS UP TO 4GHZ Search Results

SILICON RF TRANSISTOR S PARAMETERS UP TO 4GHZ Result Highlights (5)

Part	Manufacturer	Description
LBAA0QB1SJ-295	Murata Manufacturing Co Ltd	SX1262 MODULE WITH OPEN MCU
GRM-KIT-OVER100-DE-D	Murata Manufacturing Co Ltd	0805-1210 over100uF Cap Kit
LBUA5QJ2AB-828	Murata Manufacturing Co Ltd	QORVO UWB MODULE
LXMSJZNCMH-225	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag
LXMS21NCMH-230	Murata Manufacturing Co Ltd	Ultra small RAIN RFID chip tag

SILICON RF TRANSISTOR S PARAMETERS UP TO 4GHZ Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MAX2430 Abstract: MAX2430ISE JR060 Text: 19-1093; Rev 0; 7/96 UAL MAN ET KIT E N H TIO ATA S LUA D EVA LOWS L FO Low-Voltage, Silicon RF Power Amplifier/Predriver _Features ♦ Operates Over the 800MHz to 1000MHz Frequency Range The MAX2430 is ideal as a driver amplifier for portable	Original	800MHz 1000MHz MAX2430 915MHz 16-pin 125mW 100mW MAX2430ISE JR060	PDF
ACS 086 Abstract: germanium transistor ac 128 acs sot-343 4ghz s parameters transistor s parameters 4ghz fa 5571 TRANSISTOR NPN 5GHz SOT 343 MARKING BF transistor k 620 silicon rf transistor s parameters up to 4ghz Text: BFP 620 NPN Silicon Germanium RF Transistor Preliminary data 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	VPS05605 OT-343 -j100 Feb-09-2000 ACS 086 germanium transistor ac 128 acs sot-343 4ghz s parameters transistor s parameters 4ghz fa 5571 TRANSISTOR NPN 5GHz SOT 343 MARKING BF transistor k 620 silicon rf transistor s parameters up to 4ghz	PDF
Untitled Abstract: No abstract text available Text: IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 6, JUNE 2012 1755 LDMOS Technology for RF Power Amplifiers S. J. C. H. Theeuwen and J. H. Qureshi Invited Paper Abstract—We show the status of laterally diffused metal–oxide–semiconductor (LDMOS) technology, which has	Original		PDF
BFP620 acs Abstract: BFP620 s parameters 4ghz Text: BFP620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz	Original	BFP620 VPS05605 OT343 -j100 Aug-29-2001 BFP620 acs BFP620 s parameters 4ghz	PDF
BFP405 ALs Abstract: BFP405 Text: SIEGET 25 BFP405 NPN Silicon RF Transistor 3 For low current applications 4 For oscillators up to 12 GHz Noise figure F = 1.25 dB at 1.8 GHz outstanding G ms = 23 dB at 1.8 GHz 2 Transition frequency f T = 25 GHz Gold metallization for high reliability	Original	BFP405 VPS05605 OT343 -j100 Aug-20-2001 BFP405 ALs BFP405	PDF
HMXR-5001 Abstract: 13001 YF 09 TRANSISTOR HP 5082 7000 5082-0825 33150A 2N6838 Hxtr 3101 Hxtr 3101 transistor 5082-2815 hsch-1001 Text: For Complete . Application &Sales . '. Information ' ,.' • Call ' Joseph Masarich Sales Representative HEWLETT PACKARD . NEELY "Sales Region 3003 scon BLVD. SANTA CLARA, CA 95050 408 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog	Original		PDF
Infineon Technologies transistor 4 ghz Abstract: No abstract text available Text: SIEGET 25 BFP 405 NPN Silicon RF Transistor 3 For low current applications For oscillators up to 12 GHz Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding Gms = 23 dB at 1.8 GHz Transition frequency fT = 25 GHz Gold metallization for high reliability	Original	VPS05605 OT-343 -j100 Nov-17-2000 Infineon Technologies transistor 4 ghz	PDF
BFP420 application notes Abstract: BFP420 equivalent BFP420 INFINEON BFP420 (Ams) transistor bfp420 INFINEON BFP420 Ams Text: SIEGET 25 BFP420 NPN Silicon RF Transistor 3 For high gain low noise amplifiers 4 For oscillators up to 10 GHz Noise figure F = 1.1 dB at 1.8 GHz outstanding G ms = 21 dB at 1.8 GHz 2 Transition frequency f T = 25 GHz Gold metallization for high reliability	Original	BFP420 VPS05605 OT343 45GHz -j100 Aug-20-2001 BFP420 application notes BFP420 equivalent BFP420 INFINEON BFP420 (Ams) transistor bfp420 INFINEON BFP420 Ams	PDF
acs sot-343 Abstract: spice germanium diode RF POWER TRANSISTOR NPN 3GHz marking BFP 620 sot-343 VPS0560 Text: BFP 620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	VPS05605 OT-343 -j100 Dec-22-2000 acs sot-343 spice germanium diode RF POWER TRANSISTOR NPN 3GHz marking BFP 620 sot-343 VPS0560	PDF
620 sot-343 Abstract: acs sot-343 Text: BFP 620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.7 dB at 1.8 GHz	Original	VPS05605 OT-343 -j100 Mar-01-2001 620 sot-343 acs sot-343	PDF
VPS05605 Abstract: BF 212 transistor TS1440 Text: SIEGET 25 BFP 405 NPN Silicon RF Transistor 3 For low current applications 4 For oscillators up to 12 GHz Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz 2 Transition frequency f T = 25 GHz Gold metallization for high reliability	Original	VPS05605 OT-343 -j100 Dec-13-1999 VPS05605 BF 212 transistor TS1440	PDF
420 NPN Silicon RF Transistor Abstract: VPS05605 marking AMs 4 pin marking 53 Sot-343 DIODE bfp 86 Text: SIEGET 25 BFP 420 NPN Silicon RF Transistor 3 For high gain low noise amplifiers 4 For oscillators up to 10 GHz Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz 2 Transition frequency f T = 25 GHz Gold metallization for high reliability	Original	VPS05605 OT-343 45GHz -j100 Dec-13-1999 420 NPN Silicon RF Transistor VPS05605 marking AMs 4 pin marking 53 Sot-343 DIODE bfp 86	PDF
Untitled Abstract: No abstract text available Text: SIEGET 25 BFP 420 NPN Silicon RF Transistor 3 For high gain low noise amplifiers For oscillators up to 10 GHz Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding Gms = 21 dB at 1.8 GHz Transition frequency fT = 25 GHz Gold metallization for high reliability	Original	VPS05605 OT-343 45GHz -j100 Nov-17-2000	PDF
R4S BFP640 Abstract: BFP640 VPS05605 4ghz s parameters transistor s parameters 4ghz Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	BFP640 VPS05605 OT343 Apr-21-2004 R4S BFP640 BFP640 VPS05605 4ghz s parameters transistor s parameters 4ghz	PDF

BFP640 noise figure Abstract: s parameters 4ghz Text: BFP640 E/L6327 and E/L7764 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	BFP640 E/L6327 E/L7764 L6327 L7764 VPS05605 BFP640 Oct-30-2003 BFP640 noise figure s parameters 4ghz	PDF
transistor bfp420 Abstract: INFINEON BFP420 Ams BFP420 equivalent BFP420 application notes S parameters of 4 GHz transistor Text: SIEGET 25 BFP420 NPN Silicon RF Transistor 3 For high gain low noise amplifiers 4 For oscillators up to 10 GHz Noise figure F = 1.1 dB at 1.8 GHz outstanding G ms = 21 dB at 1.8 GHz 2 Transition frequency f T = 25 GHz Gold metallization for high reliability	Original	BFP420 VPS05605 OT343 transistor bfp420 INFINEON BFP420 Ams BFP420 equivalent BFP420 application notes S parameters of 4 GHz transistor	PDF
R4S BFP640 Abstract: BFP640 transistor ph 45 v marking r4s Text: BFP640 NPN Silicon Germanium RF Transistor 3 4 • High gain low noise RF transistor • Provides outstanding performance for a wide range of wireless applications 2 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	BFP640 VPS05605 OT343 Aug-16-2004 R4S BFP640 BFP640 transistor ph 45 v marking r4s	PDF
siemens rs 1003 Abstract: TRANSISTOR BI 187 Q62702-F1592 VPS05605 TS1440 Text: SIEGET 25 BFP 405 NPN Silicon RF Transistor 3 • For low current applications 4 • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f T = 25 GHz 2 • Gold metalization for high reliability	Original	VPS05605 Q62702-F1592 OT-343 -j100 Sep-09-1998 siemens rs 1003 TRANSISTOR BI 187 Q62702-F1592 VPS05605 TS1440	PDF
4GHZ TRANSISTOR Abstract: R4S BFP640 bfp640 BFP640 noise figure BGA420 T-25 TRANSISTOR NPN 5GHz marking r4s 4ghz s parameters transistor Text: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	BFP640 OT343 4GHZ TRANSISTOR R4S BFP640 bfp640 BFP640 noise figure BGA420 T-25 TRANSISTOR NPN 5GHz marking r4s 4ghz s parameters transistor	PDF
420 NPN Silicon RF Transistor Abstract: transistor 1346 Q62702-F1591 BFP420 VPS05605 RNF50 TP66 zs transistor transistor fc 1013 Semiconductor 1346 transistor Text: SIEGET 25 BFP 420 NPN Silicon RF Transistor 3 • For high gain low noise amplifiers 4 • For oscillators up to 10 GHz • Noise figure F = 1.05 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz 2 • Gold metalization for high reliability	Original	VPS05605 Q62702-F1591 OT-343 45GHz -j100 Jul-14-1998 420 NPN Silicon RF Transistor transistor 1346 Q62702-F1591 BFP420 VPS05605 RNF50 TP66 zs transistor transistor fc 1013 Semiconductor 1346 transistor	PDF
Untitled Abstract: No abstract text available Text: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	BFP640	PDF
Untitled Abstract: No abstract text available Text: SIEGET 25 BFP405 NPN Silicon RF Transistor 3 For low current applications 4 For oscillators up to 12 GHz Noise figure F = 1.25 dB at 1.8 GHz outstanding G ms = 23 dB at 1.8 GHz 2 Transition frequency f T = 25 GHz Gold metallization for high reliability	Original	BFP405 VPS05605 OT343	PDF
BFP640E6327 Abstract: BFP640 noise figure bfp640e R4S BFP640 Text: BFP640 NPN Silicon Germanium RF Transistor • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 for a wide range of wireless applications 1 • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	BFP640 OT343 726-BFP640E6327 E6327 BFP640E6327 BFP640 noise figure bfp640e R4S BFP640	PDF
Untitled Abstract: No abstract text available Text: BFP640F NPN Silicon Germanium RF Transistor* • High gain low noise RF transistor 3 • Provides outstanding performance 2 4 1 for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz	Original	BFP640F BFP640may	PDF

SILICON RF TRANSISTOR S PARAMETERS UP TO 4GHZ Search Results

SILICON RF TRANSISTOR S PARAMETERS UP TO 4GHZ Result Highlights (5)

SILICON RF TRANSISTOR S PARAMETERS UP TO 4GHZ Datasheets Context Search

MAX2430

ACS 086

Untitled

BFP620 acs

BFP405 ALs

HMXR-5001

Infineon Technologies transistor 4 ghz

BFP420 application notes

acs sot-343

620 sot-343

VPS05605

420 NPN Silicon RF Transistor

Untitled

R4S BFP640

BFP640 noise figure

transistor bfp420

R4S BFP640

siemens rs 1003

4GHZ TRANSISTOR

420 NPN Silicon RF Transistor

Untitled

Untitled

BFP640E6327

Untitled