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    SINEWAVE CHIP Search Results

    SINEWAVE CHIP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GCM188D70E226ME36D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    GRM022C71A472KE19L Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM033C81A224KE01W Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155D70G475ME15D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd
    GRM155R61J334KE01D Murata Manufacturing Co Ltd Chip Multilayer Ceramic Capacitors for General Purpose Visit Murata Manufacturing Co Ltd

    SINEWAVE CHIP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PI6UMC10802

    Abstract: No abstract text available
    Text: PI6UMC10802 Ultra Mobility, Clipped Sinewave, Clock Buffer with 2 Outputs Features Description ÎÎDual Analog Voltage Clipped Sinewave Buffer The PI6UMC10802 is a small footprint, low power, clipped sinewave buffer with 2 outputs designed to address mobile clock


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    PDF PI6UMC10802 26MHz -50dBc -15dBc -20dBc PI6UMC10802

    Untitled

    Abstract: No abstract text available
    Text: PI6UMC10802 Ultra Mobility, Clipped Sinewave, Clock Buffer with 2 Outputs Features Description ÎÎDual Analog Voltage Clipped Sinewave Buffer The PI6UMC10802 is a small footprint, low power, clipped sinewave buffer with 2 outputs designed to address mobile clock


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    PDF PI6UMC10802 26MHz -50dBc -15dBc -20dBc PS9021A

    48v to 230v inverters circuit diagram

    Abstract: 230v to 12v step down transformer DSP BASED ONLINE UPS design SOLAR INVERTER 1000 watts circuit diagram 12v dc -230v ac 200W inverter CIRCUIT DIAGRAM sinewave ups EN50091-1 advantages of battery charging circuit using scr over other battery chargers Pure Sine Wave Inverter circuit 12V to 110V circuit diagram of 230v 50hz ac input 230v 50hz
    Text: PRODUCT INDEX Line Interactive • Modified Sinewave T1 • Pure Sinewave (T2) Online Double Conversion • 1 Phase Input / 1 Phase Output (T3) • 3 Phase Input / 1 Phase Output (T4) • 3 Phase Input / 3 Phase Output (T5) Specialist Networking Distributor


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    PDF 100Ah 48v to 230v inverters circuit diagram 230v to 12v step down transformer DSP BASED ONLINE UPS design SOLAR INVERTER 1000 watts circuit diagram 12v dc -230v ac 200W inverter CIRCUIT DIAGRAM sinewave ups EN50091-1 advantages of battery charging circuit using scr over other battery chargers Pure Sine Wave Inverter circuit 12V to 110V circuit diagram of 230v 50hz ac input 230v 50hz

    Signal Types and Terminations

    Abstract: No abstract text available
    Text: Helping Customers Innovate, Improve & Grow Application Note Signal Types and Terminations Introduction. CMOS, HCMOS, LVCMOS, Sinewave, Clipped Sinewave, TTL, PECL, LVPECL, LVDS, CML…Oscillators and frequency control devices come with a range of different output buffer types and each type has its own advantages and disadvantages. The aim of this


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    PDF D-74924 1-88-VECTRON-1 Signal Types and Terminations

    TQFP32

    Abstract: magnetoresistive 10-bitDAC
    Text: Integrierte Innovation COSIN-Chip In incremental position and angular measuring systems, the COSIN circuit conditions the sinewave signals supplied by magneto-resistive sensor bridges for further processing. Highlights Function of a 6-bit D/A converter. n Automatic Gain Control


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    PDF 11-bit TQFP32 10-bit D-01109 D-01101 TQFP32 magnetoresistive 10-bitDAC

    FMC-G28SL

    Abstract: FMC-G28S
    Text: Ultra-Fast-Recovery Rectifier Diodes Electrical Characteristics Ta =25°C Absolute Maximum Ratings Parameter VRM (V) Type No. I F(AV) (A) FMC-G28S Tj (°C) IFSM (A) With Heatsink 50Hz Half-cycle Sinewave Single Shot 3.0 50 Tstg (°C) VF (V) max per chip


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    PDF FMC-G28S FMC-G28SL UL94V-0 FMC-G28SL FMC-G28S

    FMC 150

    Abstract: FMC-26UA FMC-26U FMC-28U FMC-28UA
    Text: Ultra-Fast-Recovery Rectifier Diodes Electrical Characteristics Ta=25°C Absolute Maximum Ratings Parameter VRM (V) Type No. FMC-26U I F(AV) (A) With Heatsink 50Hz Half-cycle Sinewave Single Shot 3.0 50 VF (V) max 2.0 (1 Chip) –40 to +150 3.0 (1 Chip)


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    PDF FMC-28UA FMC-28U FMC-26UA FMC-26U UL94V-0 FMC 150 FMC-26UA FMC-26U FMC-28U FMC-28UA

    c-mac

    Abstract: CS 9371 PLUTO pluto crystals CFPO-20 CFPO-21 CFPO-22 CFPO-23 CMAC TCOCXO
    Text: CFPO-20,-21,-22,-23 TC-OCXO Frequency Stability • Temperature: see table ■ Supply Voltage Variation, ±5% ±0.1ppm typ. ■ Load Coefficient, 15pF ±5pf HCMOS or 10kΩ // 10pF ±10% (clipped sinewave) ±0.1ppm typ. ISSUE 2; 20 APRIL 2006 Preliminary Specification


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    PDF CFPO-20 05ppm c-mac CS 9371 PLUTO pluto crystals CFPO-21 CFPO-22 CFPO-23 CMAC TCOCXO

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes Power Surface Mount Electrical Characteristics (Ta = 25°C) Absolute Maximum Ratings Parameter I F (AV) (A) VRM (V) Type No. SPJ-63S Tj (°C) IFSM (A) Tstg (°C) 50Hz Half-cycle Sinewave Single Shot max per element SPB-64S 6.0 SPB-G34S


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    PDF SPJ-63S SPB-64S SPB-G34S SPB-G54S MPE-24H SPB-G56S

    MPE-24H

    Abstract: SPB-64S SPB-G34S SPB-G54S SPB-G56S SPJ-63S
    Text: Schottky Barrier Diodes Power Surface Mount Electrical Characteristics (Ta = 25°C) Absolute Maximum Ratings Parameter I F (AV) (A) VRM (V) Type No. SPJ-63S Tj (°C) IFSM (A) Tstg (°C) 50Hz Half-cycle Sinewave Single Shot max per element SPB-64S 6.0 SPB-G34S


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    PDF SPJ-63S SPB-64S SPB-G34S SPB-G54S MPE-24H SPB-64S SPB-G34S SPB-G54S SPB-G56S SPJ-63S

    14X1

    Abstract: 16X2 MAS9276 MSOP10 MSOP-10 SB20
    Text: DA9276.003 13 July, 2006 MAS9276 IC for 10.00 – 30.00 MHz VCTCXO Very High Control Voltage Sensitivity True Sinewave Output Electrically Trimmable Very Low Phase Noise Low Power Low Cost • • • • • • DESCRIPTION To build a VCTCXO only a crystal is required in


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    PDF DA9276 MAS9276 MAS9276. MAS9276 14X1 16X2 MSOP10 MSOP-10 SB20

    FMB-G22H

    Abstract: FMB-22L FMB-22H FMB-32 FMB-32M FMB-G12L
    Text: Schottky Barrier Diodes 20V Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter VRM (V) Type No. Tj (°C) I F (AV) (A) IFSM (A) With Heatsink 50Hz Half-cycle Sinewave Single Shot FMB-G12L 5.0 Tstg (°C) IR (mA) VR = VRM VF (V) IF (A)


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    PDF FMB-G12L FMB-G22H FMB-22L FMB-22H FMB-G22H FMB-22L FMB-22H FMB-32 FMB-32M FMB-G12L

    FMB26L

    Abstract: FMB-36M FMB-G16L FMB-26 FMB-26L FMB-36 60V-20 dc/IR 545
    Text: Schottky Barrier Diodes 60V Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter I F (AV) (A) VRM (V) Type No. Tj (°C) IFSM (A) Tstg (°C) IR (mA) VR = VRM VF (V) 50Hz Half-cycle Sinewave Single Shot IF (A) max per element 6.0 50 5.0


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    PDF FMB-36 FMB-36M FMB-26 FMB-G16L FMB-26L FMB26L FMB-36M FMB-G16L FMB-26 FMB-26L FMB-36 60V-20 dc/IR 545

    FMB-29

    Abstract: FMB-29L FMB-39 FMB-39M FMB-G19L fmbg19l
    Text: Schottky Barrier Diodes 90V Electrical Characteristics Ta = 25°C Absolute Maximum Ratings Parameter VRM (V) Type No. Tj (°C) IFSM (A) I F (AV) (A) Tstg (°C) 50Hz Half-cycle Sinewave Single Shot FMB-G19L VF (V) IF (A) max per element 5.0 35 3.0 15 Rth ( j-c) Mass


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    PDF FMB-G19L FMB-29 FMB-29L FMB-39 FMB-39M FMB-29 FMB-29L FMB-39 FMB-39M FMB-G19L fmbg19l

    EK 110

    Abstract: FMB-2304 FMB-34M SFPB-54 SFPB-64 SFPB-74 SFPE-64 SPB-64S SPB-G34S SPB-G54S
    Text: Schottky Barrier Diodes Package Part Number I F AV (A) IFSM (A) 50Hz Tj (°C) VF (V) max IF (A) Half-cycle Sinewave Single Shot Surface Mount Surface Mount Center-tap Axial Frame-2Pin VR = VRM max Ta (°C) Rth (j- ) Rth (j-c) (°C/W) Mass (g) 1.0 30 –40 to +150


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    PDF SFPB-54 SFPB-74 SPB-G54S EK 110 FMB-2304 FMB-34M SFPB-54 SFPB-64 SFPB-74 SFPE-64 SPB-64S SPB-G34S SPB-G54S

    FMB-34M

    Abstract: FMB-G14 FMB-G14L FMB-G24H MPE-24H SFPB-54 SFPB-64 SFPB-74 SFPE-64 SPB-64S
    Text: Schottky Barrier Diodes Package Part Number I F AV (A) IFSM (A) 50Hz Tj (°C) VF (V) max IF (A) Half-cycle Sinewave Single Shot Surface Mount Surface Mount Center-tap Axial Frame-2Pin VR = VRM max Ta (°C) Rth (j- ) Rth (j-c) (°C/W) Mass (g) 1.0 30 –40 to +150


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    PDF SFPB-54 SFPB-74 SPB-G54S FMB-34M FMB-G14 FMB-G14L FMB-G24H MPE-24H SFPB-54 SFPB-64 SFPB-74 SFPE-64 SPB-64S

    fmbg19l

    Abstract: FMB-39M
    Text: Schottky Barrier Diodes 90V Electrical Characteristics(Ta=25℃) Absolute Maximum Ratings Parameter VRM (V) Type No. I F( AV) (A) FMB-G19L IFSM (A) 50Hz Half-cycle Sinewave Single Shot 4.0 5.0 35 50 2.0 3.0 15 4.0 5.0 35 7.5 10.0 50 10.0


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    PDF Ta100 FMBG19L FMB29 FMB29L FMB39 FMB39M FMBG19L FMB-39M

    FMB-G22H

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes 20V Electrical Characteristics(Ta=25℃) Absolute Maximum Ratings Parameter IFSM (A) (A) VRM I F( AV) 50Hz (V) With Half-cycle Sinewave Type No. Heatsink FMB-G12L Tj Tstg (℃) (℃) IF (A) max per element


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    PDF Ta100 FMBG12L FMBG22H FMB22L FMB22H FMB32 FMB32M FMBG12L FMB-G22H

    FMB36M

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes 60V Electrical Characteristics(Ta=25℃) Absolute Maximum Ratings Parameter I F( AV) (A) VRM (V) Type No. IFSM (A) Tj Tstg (℃) (℃) VF (V) 50Hz Half-cycle Sinewave Single Shot IF (A) max per


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    PDF Ta100 FMBG16L FMB26 FMB26L FMB36 FMB36M FMBG16L FMB36M

    Untitled

    Abstract: No abstract text available
    Text: August 1992 PRELIMINARY Micro Linear ML2035, ML2036 Programmable Sinewave Generator GENERAL DESCRIPTION FEATURES The frequency of these monolithic sinewave generators is programmable for the ML2035 from DC to 25kHz and for the ML2036 from DC to 50kHz. No external


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    PDF ML2035, ML2036 ML2035 25kHz ML2036 50kHz. 50kHz 12MHz -45dB

    ML2036IJ

    Abstract: ML2035IJ Q 345b ml2035 CIRCUIT
    Text: October 1994 % M ic r o Linear ML2035, ML2036 Programmable Sinewave Generator GENERAL DESCRIPTION FEATURES The frequency of these monolithic sinewave generators is programmable for the ML2035 from DC to 25kHz and for the ML2036 from DC to 50kHz. No external components


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    PDF ML2035 25kHz ML2036 50kHz. 16-bit ML2036 bGT341fi ML2036IJ ML2035IJ Q 345b ml2035 CIRCUIT

    ml2035 CIRCUIT

    Abstract: sine and generator and 5khz ML2036IJ
    Text: October 1994 % M ic r o Linear ML2035, ML2036 Programmable Sinewave Generator GENERAL DESCRIPTION FEATURES The frequency of these monolithic sinewave generators is programmable for the ML2035 from DC to 25kHz and for the ML2036 from DC to 50kHz. No external components


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    PDF ML2035 25kHz ML2036 50kHz. 16-bit ML2036 ML2035, ml2035 CIRCUIT sine and generator and 5khz ML2036IJ

    squarewave generator

    Abstract: SC11314 SC11313CN SC11313 SC11313/SC11314
    Text: SC11313/SC11314 Programmable Sinewave/Squarewave Generator SIERRA SEMICONDUCTOR □ Programming frequency from DC to 3.5 KHz with ±0.1 dB amplitude attenuation □ Gain error—±1.0dB □ Harmonic distortion—45 dB □ On chip crystal oscillator □ No external com ponents


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    PDF SC11313/SC11314 SC11314CN SC11313CN 14-pin SC11314CM SC11313CM SC11313 SC11314 squarewave generator

    squarewave generator

    Abstract: D2900 4th-order switch-capacitor notch filter
    Text: >11^ SIERRA SEMICONDUCTOR SC11315/SC11316/SC11317 Programmable Sinewave/Squarewave Generator The Programmable Sine/Squarewave Generator is a 8 / 14/20-pin 5 V /10 V integrated circuit. It uses switch-capacitor filter design tech­ niques to attenuate the harmonic


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    PDF SC11315/SC11316/SC11317 20-PIN 14/20-pin 14-pin, 32-bit squarewave generator D2900 4th-order switch-capacitor notch filter