transistor c 6073
Abstract: mosfet 0018 AN609 SiR494DP 174576
Text: SiR494DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SiR494DP
AN609,
09-Apr-09
transistor c 6073
mosfet 0018
AN609
174576
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Untitled
Abstract: No abstract text available
Text: New Product SiR494DP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0012 at VGS = 10 V 60 0.0017 at VGS = 4.5 V 60 VDS (V) 12 Qg (Typ.) 50 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition
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SiR494DP
2002/95/EC
SiR494DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SIR494
Abstract: No abstract text available
Text: New Product SiR494DP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0012 at VGS = 10 V 60 0.0017 at VGS = 4.5 V 60 VDS (V) 12 Qg (Typ.) 50 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition
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PDF
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SiR494DP
2002/95/EC
SiR494DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SIR494
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Untitled
Abstract: No abstract text available
Text: New Product SiR494DP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0012 at VGS = 10 V 60 0.0017 at VGS = 4.5 V 60 VDS (V) 12 Qg (Typ.) 50 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition
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SiR494DP
2002/95/EC
SiR494DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR494DP www.vishay.com Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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PDF
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SiR494DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SiR494DP
Abstract: No abstract text available
Text: New Product SiR494DP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0012 at VGS = 10 V 60 0.0017 at VGS = 4.5 V 60 VDS (V) 12 Qg (Typ.) 50 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition
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SiR494DP
2002/95/EC
SiR494DP-T1-GE3
11-Mar-11
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SiR494DP
Abstract: No abstract text available
Text: SPICE Device Model SiR494DP Vishay Siliconix N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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SiR494DP
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: New Product SiR494DP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0012 at VGS = 10 V 60 0.0017 at VGS = 4.5 V 60 VDS (V) 12 Qg (Typ.) 50 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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PDF
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SiR494DP
2002/95/EC
SiR494DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: New Product SiR494DP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0012 at VGS = 10 V 60 0.0017 at VGS = 4.5 V 60 VDS (V) 12 Qg (Typ.) 50 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition
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Original
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PDF
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SiR494DP
2002/95/EC
SiR494DP-T1-GE3
11-Mar-11
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SiR494DP
Abstract: No abstract text available
Text: New Product SiR494DP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0012 at VGS = 10 V 60 0.0017 at VGS = 4.5 V 60 VDS (V) 12 Qg (Typ.) 50 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition
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SiR494DP
2002/95/EC
SiR494DP-T1-GE3
18-Jul-08
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FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178
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GP-20)
FSQ510 Equivalent
BTA12 6008
bta16 6008
ZIGBEE interface with AVR ATmega16
Precision triac control thermostat
thyristor t 558 f eupec
gw 5819 diode
transistor a564
A564 transistor
BSM25GP120 b2
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Untitled
Abstract: No abstract text available
Text: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating
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VMN-PT0105-1007
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si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®
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Mediu33-4-9337-2727
VMN-SG2127-1210
si7121
Si4914B
SI-4102
SI4599
Si4483A
sir166
irfd120
si7949
si4459a
SIR836
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Diode SOT-23 marking 15d
Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs
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Diod92
VMN-SG2127-0911
Diode SOT-23 marking 15d
SI4210
si4812b
SI-4102
SI7149DP
SiM400
si4932
si7135
SiB914
SI4477
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