Untitled
Abstract: No abstract text available
Text: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
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SiR802DP
2002/95/EC
SiR802DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
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Original
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PDF
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SiR802DP
2002/95/EC
SiR802DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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8253
Abstract: AN609
Text: SiR802DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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SiR802DP
AN609,
05-Feb-10
8253
AN609
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Untitled
Abstract: No abstract text available
Text: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
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Original
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PDF
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SiR802DP
2002/95/EC
SiR802DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
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Original
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PDF
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SiR802DP
2002/95/EC
SiR802DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
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Original
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PDF
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SiR802DP
2002/95/EC
SiR802DP-T1-GE3
18-Jul-08
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S10031
Abstract: SiR802DP
Text: SPICE Device Model SiR802DP Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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PDF
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SiR802DP
18-Jul-08
S10031
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model SiR802DP www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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PDF
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SiR802DP
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiR802DP Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 20 0.005 at VGS = 10 V 30 0.0057 at VGS = 4.5 V 30 0.0076 at VGS = 2.5 V 30 Qg (Typ.) 15.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21
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Original
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PDF
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SiR802DP
2002/95/EC
SiR802DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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irfh5300
Abstract: PG-TDSON-8 IRFH5304 IRFH6200 SIR80 FDMS7580S
Text: PI2211 Positive Low Voltage 0.9V to 14V Hot Swap Controller and Circuit Breaker with True-SOA Description: Features: The PI2211 hot swap controller and circuit breaker ensures safe system operation during circuit card insertion by limiting
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PI2211
PI2211,
PI2211
irfh5300
PG-TDSON-8
IRFH5304
IRFH6200
SIR80
FDMS7580S
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si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®
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Mediu33-4-9337-2727
VMN-SG2127-1210
si7121
Si4914B
SI-4102
SI4599
Si4483A
sir166
irfd120
si7949
si4459a
SIR836
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inverter 12v to 220 ac mosfet based
Abstract: No abstract text available
Text: LT8710 Synchronous SEPIC/ Inverting/Boost Controller with Output Current Control Description Features Wide Input Range: 4.5V to 80V Rail-to-Rail Output Current Monitor and Control Input Voltage Regulation for High Impedance Inputs C/10 or Power Good Indication Pin
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LT8710
750kHz
20-Lead
LT8710
100kHz
LT3959
LTC3786
QFN-16,
MSOP-16E
inverter 12v to 220 ac mosfet based
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ac-dc voltage regulator using SCR circuit diagram
Abstract: PowerPAK 1212-8 stencil mosfet based circuit breaker
Text: PI2211 Positive Low Voltage 0.9V to 14V Hot Swap Controller and Circuit Breaker with True-SOA Description: Features: The PI2211 hot swap controller and circuit breaker ensures safe system operation during circuit card insertion by limiting
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Original
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PDF
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PI2211
PI2211
ac-dc voltage regulator using SCR circuit diagram
PowerPAK 1212-8 stencil
mosfet based circuit breaker
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