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Vishay Siliconix SIRA00DP-T1-GE3 MOSFET N-CH 30V 100A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIRA00DP-T1-GE3	Digi-Reel	2,601		1	1 $2.91 10 $1.887 100 $2.91 1000 $0.97134 10000 $0.97134	Buy Now
	SIRA00DP-T1-GE3	Cut Tape	2,601		1	1 $2.91 10 $1.887 100 $2.91 1000 $0.97134 10000 $0.97134	Buy Now
	SIRA00DP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.88025	Buy Now
RS	SIRA00DP-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $2.16	Get Quote
Chip 1 Exchange	SIRA00DP-T1-GE3		77,688			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SIRA00DP-T1-RE3 MOSFET N-CH 30V 100A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIRA00DP-T1-RE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.69688	Buy Now
Vishay Intertechnologies SIRA00DP-T1-GE3 N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIRA00DP-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIRA00DP-T1-GE3	Reel		21 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.86618	Buy Now
Mouser Electronics	SIRA00DP-T1-GE3		3,562			1 $2.7 10 $1.83 100 $1.28 1000 $0.955 10000 $0.88	Buy Now
Newark	SIRA00DP-T1-GE3	Cut Tape	2,799		1	1 $2.1 10 $1.75 100 $1.39 1000 $1.29 10000 $1.29	Buy Now
	SIRA00DP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.902	Buy Now
Bristol Electronics	SIRA00DP-T1-GE3		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	SIRA00DP-T1-GE3		51			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SIRA00DP-T1-GE3		2,400			1 $2.6408 10 $2.6408 100 $2.6408 1000 $0.9903 10000 $0.9903	Buy Now
	SIRA00DP-T1-GE3		2,400			1 $2.6408 10 $2.6408 100 $2.6408 1000 $0.9903 10000 $0.9903	Buy Now
	SIRA00DP-T1-GE3		1,160			1 $2.8 10 $2.8 100 $2.8 1000 $0.875 10000 $0.77	Buy Now
	SIRA00DP-T1-GE3		1,160			1 $2.8 10 $2.8 100 $2.8 1000 $0.875 10000 $0.77	Buy Now

TTI	SIRA00DP-T1-GE3	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.88	Buy Now
TME	SIRA00DP-T1-GE3				1	1 $1.79 10 $1.62 100 $1.29 1000 $1.2 10000 $1.2	Get Quote
Avnet Asia	SIRA00DP-T1-GE3			22 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SIRA00DP-T1-GE3			21 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SIRA00DP-T1-RE3 N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIRA00DP-T1-RE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIRA00DP-T1-RE3	Reel		21 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.68573	Buy Now
Mouser Electronics	SIRA00DP-T1-RE3					1 - 10 - 100 - 1000 - 10000 $0.696	Get Quote
TTI	SIRA00DP-T1-RE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.697	Buy Now
EBV Elektronik	SIRA00DP-T1-RE3			13 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay BLH SIRA00DP-T1-GE3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SIRA00DP-T1-GE3		1,450		3	1 - 10 $2.1 100 $1.3125 1000 $0.735 10000 $0.693	Buy Now

SIRA00DP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIRA00DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 100A SO8 PWR PK		Original	PDF

SIRA00DP Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: New Product SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00100 at VGS = 10 V 60 0.00135 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification	Original	PDF	SiRA00DP 2002/95/EC SiRA00DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00100 at VGS = 10 V 100 0.00135 at VGS = 4.5 V 100 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification	Original	PDF	SiRA00DP SiRA00DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: New Product SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00100 at VGS = 10 V 60 0.00135 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification	Original	PDF	SiRA00DP 2002/95/EC SiRA00DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: New Product SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00100 at VGS = 10 V 60 0.00135 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification	Original	PDF	SiRA00DP 2002/95/EC SiRA00DP-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: New Product SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00100 at VGS = 10 V 60 0.00135 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification	Original	PDF	SiRA00DP 2002/95/EC SiRA00DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.00100 at VGS = 10 V 100 0.00135 at VGS = 4.5 V 100 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification	Original	PDF	SiRA00DP SiRA00DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
SiRA00DP Abstract: S12-1009 MOSFET definitions Text: SPICE Device Model SiRA00DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	SiRA00DP 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S12-1009 MOSFET definitions
Untitled Abstract: No abstract text available Text: New Product SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00100 at VGS = 10 V 60 0.00135 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification	Original	PDF	SiRA00DP 2002/95/EC SiRA00DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiRA00DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	SiRA00DP AN609, 2913m 2856u 1699m 7618m 4258m 5983m 7762m 13-Jan-12
Untitled Abstract: No abstract text available Text: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:	Original	PDF	SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402
PowerPAK 1212-8 Abstract: mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip Text: 2005-2012:QuarkCatalogTempNew 9/20/12 4:25 PM Page 2005 25 Rectifiers, MOSFETs and Optocouplers RoHS ᭤ Innovative Products That Represent a Cross Section of Vishays Very Broad Portfolio ᭤ Products Selected for Their Versatility in Several Key Applications	Original	PDF	VT1045BP-M3/4W VBT1045BP-E3/4W VFT1045BP-M3/4W VT2045BP-M3/4W VBT2045BP-E3/4W VFT2045BP-M3/4W VT3045BP-M3/4W VBT3045BP-E3/4W VFT3045BP-M3/4W VT4045BP-M3/4W PowerPAK 1212-8 mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip
v0615a Abstract: No abstract text available Text: Vishay Intertechnology, Inc. Computer Stationary Computing One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer Stationary Computing Servers 4 Embedded Systems 5 Solid-State Discs SSDs 6 UPS 7	Original	PDF	J-STD-020 SC-70 WSL1206 VMN-MS6761-1212 v0615a
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
POWERPAK SO8 Abstract: SIS32 Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Ultra-Low RDS on with Next Generation Technology AND TEC I INNOVAT O L OGY TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V	Original	PDF	SiZ916DT VMN-PT0306-1209 POWERPAK SO8 SIS32

Untitled Abstract: No abstract text available Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - High- and Low-Side MOSFETs in One Compact Package PowerPAIR Co-Packaged MOSFETs Reduce Space, Increase Performance Over Two Discretes Key Benefits APPLICATIONS • High- and low-side MOSFETs in one	Original	PDF	SiZ790DT SiZ914DT VMN-PT0182-1402
N-Channel MOSFETs Abstract: No abstract text available Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in	Original	PDF	SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs

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Vishay Siliconix SIRA00DP-T1-GE3

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SIRA00DP Datasheets (1)

SIRA00DP Datasheets Context Search

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SiRA00DP

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PowerPAK 1212-8

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si7121

POWERPAK SO8

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N-Channel MOSFETs