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    Vishay Siliconix SIS439DNT-T1-GE3

    MOSFET P-CH 30V 50A PPAK1212-8S
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    SIS439DNT Datasheets (1)

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    SIS439DNT-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 50A 1212-8 Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS439DNT www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SiS439DNT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiS439DNT www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)f 0.0110 at VGS = - 10 V - 50e 0.0195 at VGS= - 4.5 V - 43.5 VDS (V) - 30 • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK® Package


    Original     		PDF SiS439DNT SiS439DNT-electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12