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    SIZ920DT Search Results

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    SIZ920DT Price and Stock

    Vishay Siliconix SIZ920DT-T1-GE3

    MOSFET 2N-CH 30V 40A 8POWERPAIR
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    DigiKey SIZ920DT-T1-GE3 Cut Tape
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    SIZ920DT-T1-GE3 Digi-Reel 1
    • 1 $1.69
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    SIZ920DT-T1-GE3 Reel
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    Vishay Intertechnologies SIZ920DT-T1-GE3

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    Bristol Electronics SIZ920DT-T1-GE3 2,820
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    SIZ920DT-T1-GE3 20
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    Quest Components SIZ920DT-T1-GE3 2,256
    • 1 $2.272
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    Vishay Intertechnologies SIZ920DTT1GE3

    DUAL N-CHANNEL 30 V (D-S) MOSFET Power Field-Effect Transistor, 40A I(D), 30V, 0.0071ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SIZ920DTT1GE3 3,000
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    SIZ920DT Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIZ920DT-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 40A PWRPAIR Original PDF

    SIZ920DT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiZ920DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A) 0.0071 at VGS = 10 V 40a 0.0089 at VGS = 4.5 V 40a 0.0030 at VGS = 10 V 40a 0.0035 at VGS = 4.5 V


    Original     		SiZ920DT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    63916

    Abstract: S1209
    Text: New Product SiZ920DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A) 0.0071 at VGS = 10 V 40a 0.0089 at VGS = 4.5 V 40a 0.0030 at VGS = 10 V 40a 0.0035 at VGS = 4.5 V


    Original     		SiZ920DT SiZ920DT-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 63916 S1209 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product SiZ920DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A) 0.0071 at VGS = 10 V 40a 0.0089 at VGS = 4.5 V 40a 0.0030 at VGS = 10 V 40a 0.0035 at VGS = 4.5 V


    Original     		SiZ920DT 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. P owerPAIR MOSFET s PowerPAIR 3 x 3 Provides Best Efficiency in the Industry in Compatible 3 x 3 Footprints PowerPAIR 6 x 3.7 26 % Smaller with Comparable Performance to a 6 x 5 mm2 Device PowerPAIR 6 x 5 Achieves High Efficiency in


    Original     		SiZ340DT SiZ342DT VMN-MS6927-1406 PDF

    sir158

    Abstract: q113 SiZ340DT SiR158DP N3X3
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - High- and Low-Side MOSFETs in One Compact Package AND TEC I INNOVAT O L OGY PowerPAIR N HN POWER MOSFETs O 19 62-2012 Co-Packaged MOSFETs Reduce Space, Increase Performance Over Two Discretes KEY BENEFITS


    Original     		SiZ790DT SiZ914DT VMN-PT0182-1209 sir158 q113 SiZ340DT SiR158DP N3X3 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - High- and Low-Side MOSFETs in One Compact Package PowerPAIR Co-Packaged MOSFETs Reduce Space, Increase Performance Over Two Discretes Key Benefits APPLICATIONS • High- and low-side MOSFETs in one


    Original     		SiZ790DT SiZ914DT VMN-PT0182-1402 PDF