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    SIZ998DT Price and Stock

    Vishay Siliconix SIZ998DT-T1-GE3

    MOSFET 2N-CH 30V 20A 8POWERPAIR
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    DigiKey SIZ998DT-T1-GE3 Cut Tape 790 1
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    SIZ998DT-T1-GE3 Digi-Reel 790 1
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    SIZ998DT-T1-GE3 Reel 3,000
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    Vishay Intertechnologies SIZ998DT-T1-GE3

    DUAL N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIZ998DT-T1-GE3)
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    Avnet Americas SIZ998DT-T1-GE3 Reel 17 Weeks 3,000
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    Mouser Electronics SIZ998DT-T1-GE3 3,088
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    Verical SIZ998DT-T1-GE3 3,000 3,000
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    Arrow Electronics SIZ998DT-T1-GE3 3,000 17 Weeks 3,000
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    Newark SIZ998DT-T1-GE3 Cut Tape 11,748 1
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    SIZ998DT-T1-GE3 Reel 3,000
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    TTI SIZ998DT-T1-GE3 Reel 3,000
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    TME SIZ998DT-T1-GE3 3,000
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    Avnet Asia SIZ998DT-T1-GE3 14 Weeks 6,000
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    EBV Elektronik SIZ998DT-T1-GE3 3,000 13 Weeks 3,000
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    New Advantage Corporation SIZ998DT-T1-GE3 3,000 1
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    SIZ998DT Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIZ998DT-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2 N-CH 30V 8-POWERPAIR Original PDF

    SIZ998DT Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SiZ998DT www.vishay.com Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel1 30 Channel2 30 ID (A) a, g Qg (TYP.) RDS(on) (Ω) (MAX.) 0.0067 at VGS = 10 V 20 0.0100 at VGS = 4.5 V 20 0.0028 at VGS = 10 V 60 0.0038 at VGS = 4.5 V


    Original
    PDF SiZ998DT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiZ998DT_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original
    PDF SiZ998DT AN609, 03-Sep-14