SKM200GAL12T4 Search Results

SKM200GAL12T4 Price and Stock

Filter by Manufacturer


SEMIKRON SKM200GAL12T4 Igbt Module, Single, 1.2Kv, 313A; Continuous Collector Current:313A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:-; Operating Temperature Max:125°C; Igbt Termination:Stud; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes \|Semikron SKM200GAL12T4
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SKM200GAL12T4	Bulk			12	1 - 10 $138.52 100 $126.65 1000 $126.65 10000 $126.65	Buy Now
Richardson RFPD	SKM200GAL12T4				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
SEMIKRON SKM200GAL12T4 22892320 Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SKM200GAL12T4 22892320				1	1 $181.16 10 $160.09 100 $144.29 1000 $144.29 10000 $144.29	Get Quote

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SKM200GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 313 A Tc = 80 °C 241 A 200 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules SKM200GAL12T4 VGES tpsc Tj ICRM = 3xICnom VCC = 800 V VGE ≤ 15 V	Original	PDF	SKM200GAL12T4
SKM200GAL12T4 Abstract: No abstract text available Text: SKM200GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 314 A Tc = 80 °C 242 A 200 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	PDF	SKM200GAL12T4 Isol009 SKM200GAL12T4
Untitled Abstract: No abstract text available Text: SKM200GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 314 A Tc = 80 °C 242 A 200 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	PDF	SKM200GAL12T4
SKM200GAL12T4 Abstract: diode 331 Text: SKM200GAL12T4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 1200 V Tc = 25 °C 314 A Tc = 80 °C 242 A 200 A ICnom ICRM SEMITRANS 3 Fast IGBT4 Modules ICRM = 3xICnom 600 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C	Original	PDF	SKM200GAL12T4 SKM200GAL12T4 diode 331