SVI 3104 c
Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or
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AN83301-1
NE24615
AN83302
AN83303-1
NE71083
NE70083
AN83901
AN85301
11/86-LN
AN86104
SVI 3104 c
UPC1678G
ne333
stb 1277 TRANSISTOR equivalent
transistor bf 175
NE85635 packaging schematic
NE72000 VC
svi 3104
NE9000
NE720
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LORB
Abstract: NE2720 NE334S01
Text: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18
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NE23300
NE24200
NE27200
NE67400
NE32400
NE32500
NE32900
NE33200
NE325S01
NE329S01
LORB
NE2720
NE334S01
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KGF1522
Abstract: No abstract text available
Text: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0019-38-71 ¡ electronic components KGF1522 ¡ electronic components KGF1522 Small-Signal Amplifier GENERAL DESCRIPTION The KGF1522 is a high performance GaAs FET small-signal amplifier for L-band frequencies that
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E2Q0019-38-71
KGF1522
KGF1522
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KGF1521
Abstract: TA 7286
Text: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0018-38-71 ¡ electronic components KGF1521 ¡ electronic components KGF1521 Small-Signal Amplifier GENERAL DESCRIPTION The KGF1521 is a high-performance GaAs FET small-signal amplifier for L-band frequencies that
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E2Q0018-38-71
KGF1521
KGF1521
TA 7286
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Untitled
Abstract: No abstract text available
Text: electronic components OKI KGF1531_ Small-Signal Amplifier for UHF-Band and P C S Frequencies GENERAL DESCRIPTION The KGF1531 is a high-performance GaAs FET small-signal dual-gate mixer for L band frequencies that features low-voltage operation, low-current dissipation, high conversion gain,
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KGF1531_
KGF1531
KGF1531
DD22B44
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Untitled
Abstract: No abstract text available
Text: O K I electronic components KGF1521 Small-Signal Amplifier for JHF-Band and PCS Freqencies GENERAL DESCRIPTION The KGF1521 is a high-perform ance GaAs FET small-signal amplifier for L band frequencies that features low -voltage operation, low -current dissipation, low noise, and low distortion. The
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KGF1521
KGF1521
24E40
0022flEb
D022f
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Untitled
Abstract: No abstract text available
Text: O K I electronic components KGF1522_ Small-Signal Amplifier for UHF-Band and PC S Frequencies GENERAL DESCRIPTION The KGF1522 is a high-performance GaAs FET small-signal amplifier for L band frequencies that features low-voltage operation, low-current dissipation, low noise, and low distortion. The
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KGF1522_
KGF1522
and-28
0D22A34
KGF1522
L724240
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KGF1531
Abstract: 0948
Text: ¡ electronic components KGF1531 ¡ electronic components KGF1531 Small-Signal Amplifier for UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF1531 is a high-performance GaAs FET small-signal dual-gate mixer for L band frequencies that features low-voltage operation, low-current dissipation, high conversion gain,
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KGF1531
KGF1531
0948
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Untitled
Abstract: No abstract text available
Text: Small Signal GaAs FETs ^.*• ji.' 4 ' * * A * r* * I B It- «fc - • Selection G u id e . 1-2 Alphanumeric Index. 1-4
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po111
Abstract: KGF1521
Text: ¡ electronic components KGF1521 ¡ electronic components KGF1521 Small-Signal Amplifier for UHF-Band and PCS Freqencies GENERAL DESCRIPTION The KGF1521 is a high-performance GaAs FET small-signal amplifier for L band frequencies that features low-voltage operation, low-current dissipation, low noise, and low distortion. The
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KGF1521
FEATUR21
po111
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po111
Abstract: KGF1522 CB 0925
Text: ¡ electronic components KGF1522 ¡ electronic components KGF1522 Small-Signal Amplifier for UHF-Band and PCS Frequencies GENERAL DESCRIPTION The KGF1522 is a high-performance GaAs FET small-signal amplifier for L band frequencies that features low-voltage operation, low-current dissipation, low noise, and low distortion. The
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KGF1522
po111
CB 0925
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SMD M05 sot
Abstract: NESG303100G SMD transistor M05 transistor NEC D 882 p m33 tf 130 H02 SOT-363 SMD M05 sot23 UPC8236 T6N 700 NE68000 s-parameters
Text: NEC XXXXXXXXXX NEC RF & Wireless Semiconductors 2008 NEC CEL & NEC CONTENTS California Eastern Laboratories serves designers, OEMs GaAs RFIC Switches 3 and contract manufacturers in the RF & Wireless, Mobile- Small Signal GaAs FETs 4 comm, Multimedia, Broadband Communications, Industrial
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SMD M05 sot
NESG303100G
SMD transistor M05
transistor NEC D 882 p
m33 tf 130
H02 SOT-363
SMD M05 sot23
UPC8236
T6N 700
NE68000 s-parameters
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MGF1323
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> ! MGF1323 I SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING The MGF1323, low-noise GaAs F E T with an N-channel Schottky gate, is designed for use in S to Ku band ampli Umt millimeters inches 4 M IN . 1.85 ± 0.2 4 M l N.
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MGF1323
MGF1323,
13dBm
30rnA
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transistor marking E39
Abstract: E1491 E407 transistor E391 E308 E138 e696 E302 e798 marking E72
Text: GaAs GaAs FIELD EFFECT TRANSISTOR Small Signal FETs XMFS Series XMFS Series are designed for low noise applications up to C-band to 6GHz . These devices are supplied in the plastic packages. (SOT-143) cFEATURES 1. Low Noise Figure. 2. High Associated Gain.
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OT-143)
transistor marking E39
E1491
E407 transistor
E391
E308
E138
e696
E302
e798
marking E72
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0805A L & S BAND / 4.5W SMD non - matched DESCRIPTION The MGF0805A, GaAs FET with an N-channel schottky gate, is designed for MMDS/UMTS/WiMAX applications. FEATURES • High output power Po=36.5dBm(TYP.)
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MGF0805A
MGF0805A,
400mA
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0905A L & S BAND / 2.5W non - matched DESCRIPTION OUTLINE DRAWING The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. Unit : m illim eters FEATURES APPLICATION
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MGF0905A
MGF0905A,
65GHz
26dBm
800mA
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0904A L & S BAND / 0.6W non - matched DESCRIPTION OUTLINE DRAWING The MGF0904A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. Unit : m illim eters FEATURES APPLICATION
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MGF0904A
MGF0904A,
65GHz
15dBm
200mA
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Untitled
Abstract: No abstract text available
Text: 0017072 MITSUBISHI SEMICONDUCTOR <GaAs FET> 1S7 MGF1923 TAPE CARRIER SMALL SIGNAL GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters linches The M G F 1 9 2 3 , low noise GaAs FET with an N-channel 4 .0 ± 0 .2 Schottky gate, is designed for use in S to Ku band ampli
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MGF1923
13dBm
12GHz
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> ! MGF1923 ! i TAPE CARRIER SMALL SIGNAL GaAs FET DESCRIPTION The M G F1923, low noise GaAs FET w ith an N-channel Schottky gate, is designed fo r use in S to Ku band ampli fiers. The M G F1923 is mounted in the super 12 tape.
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MGF1923
F1923,
F1923
12GHz
13dBm
12GHz
10rnA
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TA 70/04
Abstract: No abstract text available
Text: O K I electronic com ponents KGF1521_ Small-Signal Amplifier for UHF-Band and PCS Freqencies GEN ER A L D ES C R IPTIO N The KGF1521 is a high-performance GaAs FET small-signal amplifier for L band frequencies that features low-voltage operation, low-current dissipation, low noise, and low distortion. The
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KGF1531
Abstract: D 471 MARKING 3773
Text: This version: Jul. 1998 Previous version: Jan. 1998 E2Q0020-38-71 ¡ electronic components KGF1531 ¡ electronic components KGF1531 Small-Signal Amplifier GENERAL DESCRIPTION The KGF1531 is a high-performance GaAs FET small-signal dual-gate mixer for L-band frequencies that features low voltage operation, low current operation, high conversion gain, and low
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KGF1531
KGF1531
D 471
MARKING 3773
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MGF0905A
Abstract: IDS800
Text: < High-power GaAs FET small signal gain stage > MGF0905A L & S BAND / 2.5W non - matched DESCRIPTION OUTLINE DRAWING The MGF0905A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. Unit : m illim eters FEATURES ① 4.4+0/-0.3
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MGF0905A
MGF0905A,
65GHz
26dBm
800mA
MGF0905A
IDS800
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0912A L & S BAND / 14W non - matched DESCRIPTION OUTLINE DRAWING The MGF0912A, GaAs FET with an N-channel schottky gate, is designed for use in L/S band amplifiers. Unit : m illim eters FEATURES 2.2 2MIN
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MGF0912A
MGF0912A,
33dBm
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MGF0909A
Abstract: MGF0909a application
Text: < High-power GaAs FET small signal gain stage > MGF0909A L & S BAND / 6W non - matched DESCRIPTION OUTLINE DRAWING The MGF0909A GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. Unit : m illim eters FEATURES ① 4.4+0/-0.3
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MGF0909A
MGF0909A
MGF0909a application
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