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    SMD DIODE MARKING T2 Search Results

    SMD DIODE MARKING T2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SMD DIODE MARKING T2 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    A82 SMD

    Abstract: marking code jg SMD diode smd diode marking jg smd diode A82 marking code JG SMD d1875 smd A82 smd code A82 BAV70-184 smd diode code F3
    Text: SMD Switching Diodes Three Terminals Part No. Peak Reverse Marking Voltage Code Max. Forward Voltage Drop @ IF VRRM (V) VF (V) IF (mA) SMD Diodes Max. Max. Diode Max. Reverse Reverse CapaciPackCurrent Recov- tance Pinout age @ VR ery Time @1MHz Diag. 0V


    Original     		TWT4148S-221F5 TWT4148A-120F5 TWT4148C-121F5 TWT4148S-221WT TWT4148A-120WT TWT4148C-121WT A82 SMD marking code jg SMD diode smd diode marking jg smd diode A82 marking code JG SMD d1875 smd A82 smd code A82 BAV70-184 smd diode code F3 PDF

    smd diode A82

    Abstract: smd diode marking A3 smd code A82 DIODE smd marking A3 marking code JG SMD TWT4148A-120F5 diode SMD MARKING CODE A6
    Text: SMD Switching Diodes Three Terminals Part No. Peak Reverse Marking Voltage Code Max. Forward Voltage Drop @ IF VRRM (V) VF (V) IF (mA) SMD Diodes Max. Max. Diode Max. Reverse Reverse CapaciPackCurrent Recov- tance Pinout age @ VR ery Time @1MHz Diag. 0V


    Original     		TWT4148S-221F5 TWT4148A-120F5 TWT4148C-121F5 TWT4148S-221WT TWT4148A-120WT TWT4148C-121WT smd diode A82 smd diode marking A3 smd code A82 DIODE smd marking A3 marking code JG SMD TWT4148A-120F5 diode SMD MARKING CODE A6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Comchip ESD Protection Array SMD Diode Specialist CSRS065V0-G RoHS Device Working Voltage: 5Volts SO T2 3- 6 Features - Fast Reverse Recovery Time. - Fast Turn on Time. - Low Capacitance SMD Packages. - 16kV IEC61000-4-2 capable. SOT-23-6 .122(3.10) .107(2.70)


    Original     		CSRS065V0-G IEC61000-4-2 OT-23-6 OT-23-6 MILSTD-750D, QW-BP013 PDF

    4N0406

    Abstract: IPB70N04S4-06 d70a IPI70N04S4-06 gs 32 IPP70N04S4-06 PG-TO263-3-2
    Text: IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4-06 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 6.2 mΩ ID 70 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0406 IPI70N04S4-06 4N0406 IPB70N04S4-06 d70a IPI70N04S4-06 gs 32 IPP70N04S4-06 PG-TO263-3-2 PDF

    4N03L04

    Abstract: iPP80n03S4L-04 4N03L03 4n03
    Text: IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max (SMD version) 3.3 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB80N03S4L-03 IPI80N03S4L-04, IPP80N03S4L-04 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI80N03S4L-04 PG-TO263-3-2 4N03L04 iPP80n03S4L-04 4N03L03 4n03 PDF

    4N03L15

    Abstract: DIODE smd marking Ag diode smd marking T2 ANPS071E IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 PG-TO263-3-2
    Text: IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 OptiMOS -T2 Power-Transistor Product Summary V DS 30 R DS on ,max (SMD version) 14.6 ID Features PG-TO263-3-2 • N-channel - Enhancement mode 22 PG-TO262-3-1 V mΩ A PG-TO220-3-1 • Automotive AEC Q101 qualified


    Original     		IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N03L15 IPI22N03S4L-15 4N03L15 DIODE smd marking Ag diode smd marking T2 ANPS071E IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 PG-TO263-3-2 PDF

    4N04L04

    Abstract: DIODE smd marking Ag IPI80N04S4L-04 IPP80N04S4L-04 PG-TO262-3-1 m9120 IPB80N04S4L-04 4N04 SMD DIODE 681
    Text: IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 4.0 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI80N04S4L-04 PG-TO263-3-2 4N04L04 DIODE smd marking Ag IPP80N04S4L-04 m9120 4N04 SMD DIODE 681 PDF

    4N06L05

    Abstract: DIODE smd marking Ag IPP80N06S4L-05 smd diode PG 120 IPB80N06S4L-05 IPI80N06S4L-05 PG-TO263-3-2 C2406 6V 100 smd diode
    Text: IPB80N06S4L-05 IPI80N06S4L-05, IPP80N06S4L-05 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 4.8 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow


    Original     		IPB80N06S4L-05 IPI80N06S4L-05, IPP80N06S4L-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06L05 IPI80N06S4L-05 4N06L05 DIODE smd marking Ag IPP80N06S4L-05 smd diode PG 120 IPB80N06S4L-05 IPI80N06S4L-05 PG-TO263-3-2 C2406 6V 100 smd diode PDF

    4N06L08

    Abstract: 71A marking IPB45N06S4L-08 IPI45N06S4L-08 IPP45N06S4L-08 PG-TO263-3-2 smd8050 C12140
    Text: IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 7.9 mΩ ID 45 A Features • N-channel - Enhancement mode PG-TO263-3-2 • AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB45N06S4L-08 IPI45N06S4L-08, IPP45N06S4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06L08 IPI45N06S4L-08 4N06L08 71A marking IPB45N06S4L-08 IPI45N06S4L-08 IPP45N06S4L-08 PG-TO263-3-2 smd8050 C12140 PDF

    4N06L07

    Abstract: smd diode UM 07 DIODE smd marking 82a DIODE smd marking Ag E 6 smd diode IPB80N06S4L-07 IPI80N06S4L-07 IPP80N06S4L-07 PG-TO263-3-2 C2809
    Text: IPB80N06S4L-07 IPI80N06S4L-07, IPP80N06S4L-07 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 6.4 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow


    Original     		IPB80N06S4L-07 IPI80N06S4L-07, IPP80N06S4L-07 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06L07 IPI80N06S4L-07 4N06L07 smd diode UM 07 DIODE smd marking 82a DIODE smd marking Ag E 6 smd diode IPB80N06S4L-07 IPI80N06S4L-07 IPP80N06S4L-07 PG-TO263-3-2 C2809 PDF

    4N04L08

    Abstract: DIODE smd marking Ag F45A smd diode marking DD IPI45N04S4L-08 IPB45N04S4L IPB45N04S4L-08 PG-TO263-3-2 D-22A GD25Q
    Text: IPB45N04S4L-08 IPI45N04S4L-08, IPP45N04S4L-08 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 7.6 mΩ ID 45 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		IPB45N04S4L-08 IPI45N04S4L-08, IPP45N04S4L-08 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N04L08 IPI45N04S4L-08 4N04L08 DIODE smd marking Ag F45A smd diode marking DD IPI45N04S4L-08 IPB45N04S4L IPB45N04S4L-08 PG-TO263-3-2 D-22A GD25Q PDF

    4N06L04

    Abstract: IPI90N06S4L-04 DIODE smd marking Ag IPB90N06S4L-04 IPP90N06S4L-04 PG-TO263-3-2 t 04 27 smd c2804
    Text: IPB90N06S4L-04 IPI90N06S4L-04, IPP90N06S4L-04 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 3.4 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow


    Original     		IPB90N06S4L-04 IPI90N06S4L-04, IPP90N06S4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06L04 IPI90N06S4L-04 4N06L04 IPI90N06S4L-04 DIODE smd marking Ag IPB90N06S4L-04 IPP90N06S4L-04 PG-TO263-3-2 t 04 27 smd c2804 PDF

    4n04l04

    Abstract: IPB80N04S4L-04 PG-TO263-3-2 IPI80N04S4L-04
    Text: IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 4.0 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		IPB80N04S4L-04 IPI80N04S4L-04, IPP80N04S4L-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N04L04 IPI80N04S4L-04 4n04l04 IPB80N04S4L-04 PG-TO263-3-2 IPI80N04S4L-04 PDF

    ANPS071E

    Abstract: IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 PG-TO263-3-2 4N03L15 smd d22 4n03
    Text: IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 OptiMOS -T2 Power-Transistor Product Summary V DS 30 R DS on ,max (SMD version) 14.6 ID Features PG-TO263-3-2 • N-channel - Enhancement mode 22 PG-TO262-3-1 V mΩ A PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original     		IPB22N03S4L-15 IPI22N03S4L-15, IPP22N03S4L-15 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N03L15 IPI22N03S4L-15 ANPS071E IPB22N03S4L-15 IPI22N03S4L-15 IPP22N03S4L-15 PG-TO263-3-2 4N03L15 smd d22 4n03 PDF

    4n0602

    Abstract: 4N060 marking 206a IPB120N06S4-02 IPP120N06S4-02 SMD BR 32 IPI120N06S4-02 PG-TO263-3-2
    Text: IPB120N06S4-02 IPI120N06S4-02, IPP120N06S4-02 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 2.4 mΩ ID 120 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		IPB120N06S4-02 IPI120N06S4-02, IPP120N06S4-02 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0602 IPI120N06S4-02 4n0602 4N060 marking 206a IPB120N06S4-02 IPP120N06S4-02 SMD BR 32 IPI120N06S4-02 PG-TO263-3-2 PDF

    4N0604

    Abstract: 4N06 d90a smd marking t 152a IPB90N06S4-04 IPI90N06S4-04 IPP90N06S4-04 PG-TO263-3-2 diode smd marking T2
    Text: IPB90N06S4-04 IPI90N06S4-04, IPP90N06S4-04 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 3.7 mΩ ID 90 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		IPB90N06S4-04 IPI90N06S4-04, IPP90N06S4-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0604 IPI90N06S4-04 4N0604 4N06 d90a smd marking t 152a IPB90N06S4-04 IPI90N06S4-04 IPP90N06S4-04 PG-TO263-3-2 diode smd marking T2 PDF

    4N0402

    Abstract: IPB120N04S4-02 IPP120N04S4-02 IPI120N04S4-02 PG-TO263-3-2
    Text: IPB120N04S4-02 IPI120N04S4-02, IPP120N04S4-02 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 1.8 mΩ ID 120 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		IPB120N04S4-02 IPI120N04S4-02, IPP120N04S4-02 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0402 IPI120N04S4-02 4N0402 IPB120N04S4-02 IPP120N04S4-02 IPI120N04S4-02 PG-TO263-3-2 PDF

    4N0402

    Abstract: IPB90N04S4-02 IPP90N04S4-02 PG-TO263-3-2 D-90A ipi90n04s4-02 d90a
    Text: IPB90N04S4-02 IPI90N04S4-02, IPP90N04S4-02 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 2.1 mΩ ID 90 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		IPB90N04S4-02 IPI90N04S4-02, IPP90N04S4-02 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0402 IPI90N04S4-02 4N0402 IPB90N04S4-02 IPP90N04S4-02 PG-TO263-3-2 D-90A ipi90n04s4-02 d90a PDF

    4N0401

    Abstract: IPB120N04S4-01 IPI120N04S4-01 IPP120N04S4-01 PG-TO263-3-2
    Text: IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 1.5 mΩ ID 120 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		IPB120N04S4-01 IPI120N04S4-01, IPP120N04S4-01 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0401 IPI120N04S4-01 4N0401 IPB120N04S4-01 IPI120N04S4-01 IPP120N04S4-01 PG-TO263-3-2 PDF

    4N04H2

    Abstract: diode marking H2 IPB100N04S4-02 IPB100N04S4-H2 IPP100N04S4-H2 marking .H2 Marking H2 SMD TRANSISTOR MARKING DD IPI100N04S4-H2 IPI100N04S4-02
    Text: IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS -T2 Power-Transistor Product Summary Features V DS 40 V R DS on ,max (SMD version) 2.4 mΩ ID 100 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original     		IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB100N04S4-02 4N04H2 IPI100N04S4-02 4N04H2 diode marking H2 IPB100N04S4-02 IPB100N04S4-H2 IPP100N04S4-H2 marking .H2 Marking H2 SMD TRANSISTOR MARKING DD IPI100N04S4-H2 IPI100N04S4-02 PDF

    4n0603

    Abstract: 4N06 4N060 IPB120N06S4-03 IPI120N06S4-03 IPP120N06S4-03 PG-TO263-3-2
    Text: IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 2.8 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow


    Original     		IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0603 IPI120N06S4-03 4n0603 4N06 4N060 IPB120N06S4-03 IPI120N06S4-03 IPP120N06S4-03 PG-TO263-3-2 PDF

    4n0609

    Abstract: F45A IPB45N06S4-09 IPI45N06S4-09 IPP45N06S4-09 PG-TO263-3-2 4N06
    Text: IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 9.2 mΩ ID 45 A Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 PG-TO263-3-2 4N0609 IPI45N06S4-09 PG-TO262-3-1 4n0609 F45A IPB45N06S4-09 IPI45N06S4-09 IPP45N06S4-09 PG-TO263-3-2 4N06 PDF

    4N03L03

    Abstract: 4n03l02 IPB80N03S4L-02 4n03L
    Text: IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary Features V DS 30 V R DS on ,max 2.4 mΩ ID 80 A PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		IPB80N03S4L-02 IPI80N03S4L-03, IPP80N03S4L-03 PG-TO262-3-1 PG-TO263-3-2 PG-TO220-3-1 IPI80N03S4L-03 PG-TO263-3-2 4N03L03 4n03l02 4n03L PDF

    4N06H1

    Abstract: IPP120N06S4-H1 marking H1 IPB120N06S4-H1 IPI120N06S4-H1 PG-TO263-3-2
    Text: IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 2.1 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow


    Original     		IPB120N06S4-H1 IPI120N06S4-H1, IPP120N06S4-H1 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N06H1 IPI120N06S4-H1 4N06H1 IPP120N06S4-H1 marking H1 IPB120N06S4-H1 IPI120N06S4-H1 PG-TO263-3-2 PDF