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    SMD TRANSISTOR RR Search Results

    SMD TRANSISTOR RR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLM15PX121BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 120ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX181SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 180ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM21HE802SN1L Murata Manufacturing Co Ltd FB SMD 0805inch 8000ohm NONAUTO Visit Murata Manufacturing Co Ltd
    BLM15PX330BH1D Murata Manufacturing Co Ltd FB SMD 0402inch 33ohm POWRTRN Visit Murata Manufacturing Co Ltd
    BLM15PX600SH1D Murata Manufacturing Co Ltd FB SMD 0402inch 60ohm POWRTRN Visit Murata Manufacturing Co Ltd

    SMD TRANSISTOR RR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: CHIP PHOTO-TRANSISTOR CmSENSOR mum • Features 1. Developed as a chip type SMD photo-transistor for both right-angle and upright uses 2. Small and square size, dimensions : 3.2 L x 2.4(W)x2.4(H)mm 3. Automatic mounting by chip mounter avail­ able 4. Reflow soldering available


    OCR Scan     		CPT-181 950nmlR3tCttSSSHSH CL-200IRt CL-200IR L-2001R PDF

    transistor ft 960

    Abstract: smd transistor 2x5 tj3b 3b BLT81
    Text: N AMER PHILIPS/DISCRETE fc.'ìE D bbS3^31 □ÜSÖ7S'i E71 B i APX _ rro u u m apwiHwm ivn i-iiiiip» ovm iconauciors BLT81 UHF power transistor FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. QUICK REFERENCE DATA


    OCR Scan     		BLT81 OT223 OT223 MBA451 MRC089 transistor ft 960 smd transistor 2x5 tj3b 3b BLT81 PDF

    transistor A25 SMD

    Abstract: transistor smd ZR tic 126 TRANSISTOR SMD I-314 transistor smd ZR 22 i314
    Text: ü iä H W S & ' y y y * h VzjyVTs^ C P T - 2 9 5 / U — X _ Surface Mountable Chip Photo-transistor CPT-290 Series Features 1. f Ä 7 D f R ] ^ ö ' p ZJj - h 1. Developed as a chip type SMD photo­ transistor for both reverse and top


    OCR Scan     		CPT-290 100ST2 L-201IR CL-201 transistor A25 SMD transistor smd ZR tic 126 TRANSISTOR SMD I-314 transistor smd ZR 22 i314 PDF

    transistor tt 2222

    Abstract: smd 809 x transistor transistor SMD S33
    Text: N AUER PHILIPS/DISCRETE •. b'lE T> m bbSBSBl 0DSfl737 bOfl « A P X jg iiiiw n o u cto Kroouci specification BLT50 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures


    OCR Scan     		0DSfl737 BLT50 OT223 bbS3R31 0DS87M3 transistor tt 2222 smd 809 x transistor transistor SMD S33 PDF

    2SA1579

    Abstract: smd transistor rr
    Text: Transistors SMD Type High-Voltage Amplifier Transistor 2SA1579 Features High breakdown voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -120 V Collector-emitter voltage VCEO -120


    Original     		2SA1579 -100V -10mA, 100MHz 2SA1579 smd transistor rr PDF

    smd code HF transistor

    Abstract: TRANSISTOR SMD MARKING CODE KF transistor SMD t30 SMD Transistor t30 TRANSISTOR SMD MARKING CODE 5b TRANSISTOR SMD MARKING CODE LK TRANSISTOR SMD MARKING CODE XI smd transistor marking K7 transistor SMD MARKING CODE HF smd transistor marking L6 NPN
    Text: Philips Semiconductors 7 1 1 DflE?b O D b ^ T ? 743 • P H I N Product specification BLU86 UHF power transistor FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile • Gold metallization ensures excellent reliability.


    OCR Scan     		71IDflgb BLU86 OT223 OT223 smd code HF transistor TRANSISTOR SMD MARKING CODE KF transistor SMD t30 SMD Transistor t30 TRANSISTOR SMD MARKING CODE 5b TRANSISTOR SMD MARKING CODE LK TRANSISTOR SMD MARKING CODE XI smd transistor marking K7 transistor SMD MARKING CODE HF smd transistor marking L6 NPN PDF

    Untitled

    Abstract: No abstract text available
    Text: N AMER P H ILIP S /D IS C R E T E b'lE T> • bbSB'iai D0Sfl7ST B7T » A P X rm n p o rro u u m s p w m w u u n BLT81 UHF pow er transistor FEATURES • SMD encapsulation • Gold metallization ensures


    OCR Scan     		BLT81 OT223 PDF

    TLP121-4

    Abstract: tlp120 smd TLP112A
    Text: Mini Flat Photocouplers SMD Photocouplers Transistor Output_ F7 Collector Breakdown Votage V(BR)CEO(V) Current Transfer Ratio Type No. Pin Configuration Features TLP121 4 ch Type TLP120 AC input £ TLP120-4 GB BV (mA) (V) 80 100 600 100 1200 200


    OCR Scan     		TLP121 TLP121-4 TLP124 TLP124-4 TLP120 TLP120-4 TLP126 TLP621 TLP621-4 TLP624 tlp120 smd TLP112A PDF

    04n03la

    Abstract: 04N03 IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO252-3-11 Q67042-S4177
    Text: OptiMOS 2 Power-Transistor IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A


    Original     		IPD04N03LA IPS04N03LA IPF04N03LA IPU04N03LA P-TO252-3-11 P-TO252-3-23 04n03la 04N03 IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA P-TO252-3-11 Q67042-S4177 PDF

    transistor MAR 819

    Abstract: transistor MAR 543 sl2 357 BFS17
    Text: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4


    OCR Scan     		BFS17/BFS17R BFS17 BFS17R 26-Mar-97 transistor MAR 819 transistor MAR 543 sl2 357 PDF

    smd transistor 331

    Abstract: TRANSISTOR SMD m3a philips capacitor 16v smd transistor w J 3 58 smd transistor 54 JI SMD Transistor 1f 4312 020 36640 I5 smd transistor ptfe trimmer philips 100 pf smd transistor ats
    Text: N AMER PHILIPS/DISCRETE bRE T> • bb53T31 002ÖÖM7 M3Ö MARX Philios Semiconductors Data sheet Product specification status BLU56 UHF power transistor date of issue January 1991 FEATURES • SMD encapsulation • Emitter-ballasting resistors for optimum temperature profile


    OCR Scan     		BLU56 bb53T31 OT223 OT223 MC3027 smd transistor 331 TRANSISTOR SMD m3a philips capacitor 16v smd transistor w J 3 58 smd transistor 54 JI SMD Transistor 1f 4312 020 36640 I5 smd transistor ptfe trimmer philips 100 pf smd transistor ats PDF

    A1502

    Abstract: smd diode code GS Q67065-A7009 SMD CODE G13
    Text: Preliminary Data Sheet IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 2.7 mΩ ID


    Original     		IPB100N06S3L-03 IPI100N06S3L-03, IPP100N06S3L-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB100N06S3L-03 IPI100N06S3L-03 PG-TO263-3-2 A1502 smd diode code GS Q67065-A7009 SMD CODE G13 PDF

    09N03LA

    Abstract: IPS09N03LA 09N03 diode marking 321 09N03LA datasheet IPD09N03LA 09N03LA equivalent IPF09N03LA IPU09N03LA P-TO251-3-1
    Text: IPD09N03LA G IPS09N03LA G OptiMOS 2 Power-Transistor IPF09N03LA G IPU09N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 8.6 mΩ ID


    Original     		IPD09N03LA IPS09N03LA IPF09N03LA IPU09N03LA IPD09N03LA IPF09N03LA IPS09N03LA IPU09N03LA P-TO252-3-11 P-TO252-3-23 09N03LA 09N03 diode marking 321 09N03LA datasheet 09N03LA equivalent P-TO251-3-1 PDF

    070N06L

    Abstract: PG-TO-220-3 PG-TO220-3 g2ns 070N0 D53A
    Text: IPB070N06L G IPP070N06L G OptiMOS Power-Transistor Product Summary Features V DS • For fast switching converters and sync. rectification R DS on ,max • N-channel enhancement - logic level SMD version ID 60 V 6.7 m: 80 A • 175 °C operating temperature


    Original     		IPB070N06L IPP070N06L PG-TO263-3 PG-TO220-3 070N06L 070N06L PG-TO-220-3 PG-TO220-3 g2ns 070N0 D53A PDF

    05N03LA

    Abstract: IPF05N03LA 05n03l IPD05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11
    Text: IPD05N03LA G IPS05N03LA G OptiMOS 2 Power-Transistor IPF05N03LA G IPU05N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 5.1 mΩ ID


    Original     		IPD05N03LA IPS05N03LA IPF05N03LA IPU05N03LA IPD05N03LA IPF05N03LA IPS05N03LA IPU05N03LA P-TO252-3-11 05N03LA 05n03l P-TO252-3-11 PDF

    09N03LA

    Abstract: IPS09N03LA IPD09N03LA 09N03 09N03LA datasheet 09N03LA equivalent IPU09N03LA equivalent IPF09N03LA IPU09N03LA P-TO252-3-11
    Text: IPD09N03LA G IPS09N03LA G OptiMOS 2 Power-Transistor IPF09N03LA G IPU09N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 8.6 mΩ ID


    Original     		IPD09N03LA IPS09N03LA IPF09N03LA IPU09N03LA IPD09N03LA IPF09N03LA IPS09N03LA IPU09N03LA P-TO252-3-11 P-TO252-3-23 09N03LA 09N03 09N03LA datasheet 09N03LA equivalent IPU09N03LA equivalent P-TO252-3-11 PDF

    09N03

    Abstract: 09n03lb 09n03l IPD09N03LB PG-TO252-3-11
    Text: IPD09N03LB G IPF09N03LB G IPS09N03LB G IPU09N03LB G OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 30 V R DS on),max (SMD version) 9.1 mΩ


    Original     		IPD09N03LB IPF09N03LB IPS09N03LB IPU09N03LB PG-TO252-3-11 PG-TO252-3-23 09N03 09n03lb 09n03l PG-TO252-3-11 PDF

    2N0807

    Abstract: Q67060-S6082 Q67040-S4263 2n08 spp80n08s2-07 Q67040-S4264
    Text: Preliminary data OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated SPI80N08S2-07 SPP80N08S2-07,SPB80N08S2-07 P-TO262-3-1 VDS 75 V RDS on max. SMD version 7.1 mΩ ID


    Original     		SPI80N08S2-07 SPP80N08S2-07 SPB80N08S2-07 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPB80N08S2-07 SPI80N08S2-07 P-TO220-3-1 2N0807 Q67060-S6082 Q67040-S4263 2n08 Q67040-S4264 PDF

    IPS09N03LA

    Abstract: IPD09N03LA
    Text: IPD09N03LA G IPS09N03LA G OptiMOS 2 Power-Transistor IPF09N03LA G IPU09N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target application V DS 25 V R DS on),max (SMD version) 8.6 mΩ


    Original     		IPD09N03LA IPS09N03LA IPF09N03LA IPU09N03LA PG-TO252-3-11 Q67042-S4268 PDF

    Q67065-A7014

    Abstract: IPI80N06S3L06
    Text: Preliminary Data Sheet IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 OptiMOS -T Power-Transistor Product Summary Features • N-channel - Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 5.6 mΩ ID 80


    Original     		IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 IPB80N06S3L-06 IPI80N06S3L-06 PG-TO263-3-2 Q67065-A7014 IPI80N06S3L06 PDF

    06n03la

    Abstract: IPD06N03LA
    Text: OptiMOS 2 Power-Transistor IPD06N03LA G IPF06N03LA G IPS06N03LA G IPU06N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target application V DS 25 V R DS on),max (SMD version) 5.7 mΩ


    Original     		IPD06N03LA IPS06N03LA IPF06N03LA IPU06N03LA PG-TO252-3-11 Q67042-S4278 06n03la PDF

    IPS04N03LA G

    Abstract: max5199
    Text: OptiMOS 2 Power-Transistor IPD04N03LA IPF04N03LA IPS04N03LA IPU04N03LA Product Summary Features • Ideal for high-frequency dc/dc converters 1 • Qualified according to JEDEC for target applications V DS 25 V R DS on),max (SMD version) 3.8 mΩ ID 50 A


    Original     		IPD04N03LA IPS04N03LA IPF04N03LA IPU04N03LA IPD04N03LA IPF04N03LA P-TO252-3-11 Q67042-S4177 IPS04N03LA G max5199 PDF

    H6N03LA

    Abstract: H6N03 PG-TO252-3-11 to251 IPDH6N03LA H6N03L
    Text: OptiMOS 2 Power-Transistor IPDH6N03LA G IPFH6N03LA G IPSH6N03LA G IPUH6N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 6 mΩ ID


    Original     		IPDH6N03LA IPSH6N03LA IPFH6N03LA IPUH6N03LA PG-TO252-3-11 PG-TO252-3-23 H6N03LA H6N03 PG-TO252-3-11 to251 H6N03L PDF

    09n03la

    Abstract: IPS09N03LA IPD09N03LA 09n03
    Text: IPD09N03LA G IPS09N03LA G OptiMOS 2 Power-Transistor IPF09N03LA G IPU09N03LA G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target application V DS 25 V R DS on),max (SMD version) 8.6 mΩ ID


    Original     		IPD09N03LA IPS09N03LA IPF09N03LA IPU09N03LA PG-TO252-3-11 Q67042-S4268 09n03la 09n03 PDF