17428
Abstract: max 17428
Text: GMDA05-6 VISHAY Vishay Semiconductors ESD Protection Diode Array Features • Transient protection for data lines as per IEC 61000-4-2 ESD 15 kV (air) 8 kV (contact) IEC 61000-4-5 (Lightning) 12 A (tp = 8/ 20 µs) • Small SO-8 surface mount package • 6-line unidirectional protection
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GMDA05-6
RS-232
RS-422
MIL-STD-750,
D-74025
03-Jun-04
17428
max 17428
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GMDA05-6
Abstract: max 17428
Text: GMDA05-6 VISHAY Vishay Semiconductors ESD Protection Diode Array Features • Transient protection for data lines as per IEC 61000-4-2 ESD 15 kV (air) 8 kV (contact) IEC 61000-4-5 (Lightning) 12 A (tp = 8/ 20 µs) • Small SO-8 surface mount package • 6-line unidirectional protection
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GMDA05-6
RS-232
RS-422
D-74025
16-Jul-03
GMDA05-6
max 17428
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Application Note AN821
Abstract: 71622
Text: VISHAY SILICONIX www.vishay.com Power MOSFETs Application Note AN821 PowerPAK SO-8 Mounting and Thermal Considerations by Wharton McDaniel MOSFETs for switching applications are now available with die on resistances around 1 m and with the capability to
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AN821
16-Mai-13
Application Note AN821
71622
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Untitled
Abstract: No abstract text available
Text: Si7852ADP Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 80 0.017 at VGS = 10 V 30 0.021 at VGS = 8 V 30 Qg (Typ.) 30.5 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si7852ADP
Si7852ADP-T1-E3
Si7852ADP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si7852ADP Vishay Siliconix N-Channel 80-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 80 0.017 at VGS = 10 V 30 0.021 at VGS = 8 V 30 Qg (Typ.) 30.5 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET
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Si7852ADP
Si7852ADP-T1-E3
Si7852ADP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: Si7392DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.00975 at VGS = 10 V 15 0.01375 at VGS = 4.5 V 13 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 G 4 D 8 D • High-Side DC/DC Conversion
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Si7392DP
2002/95/EC
Si7392DP-T1-E3
Si7392DP-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si7392DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) (Ω) ID (A) 0.00975 at VGS = 10 V 15 0.01375 at VGS = 4.5 V 13 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 G 4 D 8 D • High-Side DC/DC Conversion
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Si7392DP
2002/95/EC
Si7392DP-T1-E3
Si7392DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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SiR474DP
Abstract: SIR474
Text: SiR474DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 20 0.012 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 8 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Notebook CPU Core - High-Side Switch
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SiR474DP
SiR474DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SIR474
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Untitled
Abstract: No abstract text available
Text: SiR474DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0095 at VGS = 10 V 20 0.012 at VGS = 4.5 V 20 VDS (V) 30 Qg (Typ.) 8 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 3 G • Notebook CPU Core - High-Side Switch
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SiR474DP
SiR474DP-T1-GE3
11-Mar-11
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vishay so-8 pin dimensions
Abstract: PowerPAK SO-8 vishay power pak SO-8 package dimension so-8 vishay weight an821 Application Note SO8 Exposed PowerPAK 1212-8 Si4874DY Si7446DP
Text: AN821 Vishay Siliconix PowerPAK SO-8 Mounting and Thermal Considerations Wharton McDaniel MOSFETs for switching applications are now available with die on resistances around 1 mΩ and with the capability to handle 85 A. While these die capabilities represent a major advance over what was available
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AN821
28-Feb-06
vishay so-8 pin dimensions
PowerPAK SO-8
vishay power pak SO-8 package dimension
so-8 vishay weight
an821
Application Note SO8 Exposed
PowerPAK 1212-8
Si4874DY
Si7446DP
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Untitled
Abstract: No abstract text available
Text: New Product Si7190DP Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)g 0.118 at VGS = 10 V 18.4 0.124 at VGS = 6 V 18.0 VDS (V) 250 Qg (Typ.) 32 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 G 4 D 8 D • Primary Side Switch
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Si7190DP
2002/95/EC
Si7190DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiRA04DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00215 at VGS = 10 V 40 0.00310 at VGS = 4.5 V 40 VDS (V) 30 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8
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SiRA04DP
SiRA04DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiR492DP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0038 at VGS = 4.5 V 40 0.0047 at VGS = 2.5 V 40 VDS (V) 12 Qg (Typ.) 41 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Secondary Synchronous Rectification
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SiR492DP
SiR492DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: Si7382DP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.0047 at VGS = 10 V 24 0.0062 at VGS = 4.5 V 21 PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • Low-Side DC/DC Conversion
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Si7382DP
Si7382DP-T1-E3
Si7382DP-T1-GE3
11-Mar-11
|
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marking 7200 so8
Abstract: No abstract text available
Text: New Product SiR401DP Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A)d 0.0032 at VGS = - 10 V - 50 0.0042 at VGS = - 4.5 V - 50 0.0077 at VGS = - 2.5 V - 50 Qg (Typ.) 97 nC APPLICATIONS PowerPAK SO-8
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SiR401DP
2002/95/EC
SiR401DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
marking 7200 so8
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sira
Abstract: No abstract text available
Text: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.0020 at VGS = 10 V 50 0.0027 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8
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SiRA02DP
2002/95/EC
SiRA02DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
sira
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Untitled
Abstract: No abstract text available
Text: New Product Si7633DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0033 at VGS = - 10 V - 60 0.0055 at VGS = - 4.5 V - 60 VDS (V) - 20 Qg (Typ.) 85 nC APPLICATIONS • Adaptor Switch PowerPAK SO-8 S 6.15 mm
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Si7633DP
Si7633DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.0020 at VGS = 10 V 50 0.0027 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8
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SiRA02DP
2002/95/EC
SiRA02DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: New Product SiRA06DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0025 at VGS = 10 V 40 0.0035 at VGS = 4.5 V 40 Qg (Typ.) 22.5 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8
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SiRA06DP
SiRA06DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: New Product SiRA02DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, g RDS(on) () (Max.) 30 0.0020 at VGS = 10 V 50 0.0027 at VGS = 4.5 V 50 Qg (Typ.) 34.3 nC APPLICATIONS • Synchronous Rectification PowerPAK SO-8
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SiRA02DP
2002/95/EC
SiRA02DP-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
Untitled
Abstract: No abstract text available
Text: Si7390DP Vishay Siliconix N-Channel 30 V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.0095 at VGS = 10 V 15 0.0135 at VGS = 4.5 V 13 APPLICATIONS PowerPAK SO-8 S 6.15 mm • High-Side DC/DC Conversion - Notebook - Server
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Si7390DP
2002/95/EC
Si7390DP-T1-E3
Si7390DP-T1-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: New Product SiR492DP Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e 0.0038 at VGS = 4.5 V 40 0.0047 at VGS = 2.5 V 40 VDS (V) 12 Qg (Typ.) 41 nC APPLICATIONS PowerPAK SO-8 S 6.15 mm • Secondary Synchronous Rectification
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SiR492DP
SiR492DP-T1-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: Si7898DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 150 RDS(on) (Ω) ID (A) 0.085 at VGS = 10 V 4.8 0.095 at VGS = 6.0 V 4.5 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs
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Si7898DP
Si7898DP-T1-E3
Si7898DP-T1-GE3
11-Mar-11
|
Untitled
Abstract: No abstract text available
Text: New Product Si7159DP Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.007 at VGS = - 10 V - 30d 0.0105 at VGS = - 4.5 V - 30d • • • • Qg (Typ.) 63 nC PowerPAK SO-8 COMPLIANT • Notebook Battery Charging
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Si7159DP
Si7159DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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