LPC2000
Abstract: LPC908 P89LPC908 measurement of power using 8051 microcontroller schematic usb flash
Text: DB-SO8-LPC908 USB-Dongle and Derivative Boards The DB-SO8-LPC908 is the Derivative Board for the P89LPC908 microcontroller in an 8 pin SO package. The DB-SO8-LPC908 requires the use of the USB-Dongle for power and a programming interface. The USB-Dongle and DB-SO8-LPC908 allow quick and easy ICP
|
Original
|
DB-SO8-LPC908
DB-SO8-LPC908
P89LPC908
P89LPC908.
LPC908
LPC2000
P89LPC908
measurement of power using 8051 microcontroller
schematic usb flash
|
PDF
|
LPC2000
Abstract: LPC908 P89LPC908 622-1015-ND
Text: DB-SO8-LPC908 USB-Dongle and Derivative Boards The DB-SO8-LPC908 is the Derivative Board for the P89LPC908 microcontroller in an 8 pin SO package. The DB-SO8-LPC908 requires the use of the USB-Dongle for power and a programming interface. The USB-Dongle and DB-SO8-LPC908 allow quick and easy ICP
|
Original
|
DB-SO8-LPC908
DB-SO8-LPC908
P89LPC908
P89LPC908.
LPC908
622-1015-ND
1-800-DIGI-KEY
LPC2000
P89LPC908
622-1015-ND
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STEVAL-CCA036V1 Demonstration board for single channel op-amp in SO8 package Data brief Description The STEVAL-CCA036V1 demonstration board is designed to help characterize single operational amplifiers in SO8 packages. With this board, the most common op-amp based
|
Original
|
STEVAL-CCA036V1
STEVAL-CCA036V1
DocID024760
|
PDF
|
Untitled
Abstract: No abstract text available
Text: NXP transistors in LFPAK56 – the true power package for smart efficiency Full power in half the footprint First bipolar transistors in LFPAK/Power-SO8 These high-power bipolar transistors, housed in LFPAK56 Power-SO8 packages, deliver DPAK-like thermal and electrical performance in just half the footprint. Offering reliable,
|
Original
|
LFPAK56
AEC-Q101
OT223,
com/group/12466
|
PDF
|
VFQFPN8* footprint
Abstract: so8 pcb pattern VFQFPN8 MLP8 FOOTPRINT mlp8 land pattern VFQFPN land pattern M25PXX SO8 NARROW so8 footprint AN1579
Text: AN1579 APPLICATION NOTE Compatibility between the SO8 Package and the MLP Package for the M25Pxx in Your Application CONTENTS • FITTING MORE IN THE SAME AREA – Cross sections of the MLP and SO8 ■ ■ The new MicroLeadframe Package MLP is the ideal solution
|
Original
|
AN1579
M25Pxx
150mil
16Mbit,
150mil)
VFQFPN8* footprint
so8 pcb pattern
VFQFPN8
MLP8 FOOTPRINT
mlp8 land pattern
VFQFPN land pattern
SO8 NARROW
so8 footprint
AN1579
|
PDF
|
npn transistor footprint
Abstract: PBLS2002D PBLS4003V PBLS2003D S 170 MOSFET TRANSISTOR PBLS4003D PBLS1503V PBSS2515YPN PBSS3515VS PBLS2003S
Text: Double low VCEsat BISS transistors in SO8 2.7 A double low VCEsat (BISS) transistors to reduce board space NXP Semiconductors‘ latest double Breakthrough In Small-Signal (BISS) transistors, housed in the industry standard package SO8, deliver performance and board space benefits to a variety of
|
Original
|
|
PDF
|
so8 footprint
Abstract: sot669 package SO8 package PSMN026-80YS sot669 PSMN012-100YS PSMN1R2-25YL PSMN1R3-30YL PSMN1R5-25YL PSMN1R7-30YL
Text: New Trench 6 MOSFETs in a Power-SO8 package 25 V to 100 V MOSFETs in Power-SO8 We’ve extended our range of Trench 6 MOSFETs with new devices at 60 V and 100 V in the LFPAK SOT669 package. NXP leads the way with its range of Trench 6 MOSFETs in LFPAK (Loss Free PAcKage). By combining Trench 6 silicon
|
Original
|
OT669)
PSMN5R5-60YS)
so8 footprint
sot669 package
SO8 package
PSMN026-80YS
sot669
PSMN012-100YS
PSMN1R2-25YL
PSMN1R3-30YL
PSMN1R5-25YL
PSMN1R7-30YL
|
PDF
|
SOT1023
Abstract: lfpak sot1023 sot669 footprint LFPAK footprint so8 footprint PSMN7R0-30YL PSMN1R2-25YL PSMN1R3-30YL PSMN3R0-30YL PSMN3R5-30YL
Text: Nine new Trench 6 MOSFETs in a Power-SO8 package The world’s first < 1 mΩ Power-SO8 MOSFETs at 25 V We’ve extended our range of Trench 6 MOSFETs with nine new devices at 25 V, 30 V, 40 V and 80 V in the LFPAK SOT669 and SOT1023 package. NXP leads the way with its range of Trench 6 MOSFETs in
|
Original
|
OT669
OT1023)
PSMN1R2-25YL)
high-efficien84
SOT1023
lfpak sot1023
sot669 footprint
LFPAK footprint
so8 footprint
PSMN7R0-30YL
PSMN1R2-25YL
PSMN1R3-30YL
PSMN3R0-30YL
PSMN3R5-30YL
|
PDF
|
91/157/AET
Abstract: No abstract text available
Text: STM8T143 Single-channel capacitive sensor for touch and proximity detection Datasheet - production data Applications • Ear-face proximity detection for smart phone devices SO8 narrow • Companion device for navigation joystick/optical track pad UFDFPN8
|
Original
|
STM8T143
DocID18315
91/157/AET
|
PDF
|
ufdfpn8 footprint
Abstract: dfn8 tray ufdfpn8 ufdfpn8 thermal resistance 91/157/AET
Text: STM8T143 Single-channel capacitive sensor for touch and proximity detection Datasheet - production data Applications • Ear-face proximity detection for smart phone devices SO8 narrow • Companion device for navigation joystick/optical track pad UFDFPN8
|
Original
|
STM8T143
DocID18315
ufdfpn8 footprint
dfn8 tray
ufdfpn8
ufdfpn8 thermal resistance
91/157/AET
|
PDF
|
PHM21NQ15T
Abstract: No abstract text available
Text: PHM21NQ15T TrenchMOS standard level FET Rev. 02 — 11 September 2003 Product data M3D879 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • SOT96 SO8 footprint compatible
|
Original
|
PHM21NQ15T
M3D879
OT685-1
PHM21NQ15T
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Wave soldering footprint Footprint information for wave soldering of SO8 package SOT96-1 1.20 2x enlarged solder land 0.3 (2×) 0.60 (6×) 1.30 4.00 6.60 7.00 1.27 (6×) 5.50 preferred transport direction during soldering solder land solder resist occupied area
|
Original
|
OT96-1
sot096-1
|
PDF
|
LM2903
Abstract: STMicroelectronics st+2903Y
Text: LM2903 Low-power dual voltage comparator Datasheet - production data • TTL, DTL, ECL, MOS, CMOS compatible outputs • Automotive qualification N DIP8 plastic package D SO8 (plastic micropackage) Related products • See LM2903W for similar device with higher
|
Original
|
LM2903
LM2903W
LM2903H
DocID2470
LM2903
STMicroelectronics
st+2903Y
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Features and Benefits Integrated transmitter-receiver for 120kHz ASK transponders tags Unique Parallel Antenna concept for maximum power efficiency. No external quartz reference required. No zero modulation problems. SO8 package and high level of integration for compact reader design
|
Original
|
120kHz
FDX-B20.
QS9000,
ISO14001
|
PDF
|
|
|
transistor BP 109
Abstract: Si4420DY
Text: Si4420DY N-channel enhancement mode field-effect transistor Rev. 01 — 28 May 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4420DY in SOT96-1 SO8 .
|
Original
|
Si4420DY
M3D315
OT96-1
OT96-1,
transistor BP 109
|
PDF
|
MS-012AA
Abstract: Si4410DY
Text: Si4410DY N-channel enhancement mode field-effect transistor Rev. 02 — 05 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4410DY in SOT96-1 SO8 .
|
Original
|
Si4410DY
M3D315
OT96-1
OT96-1,
MS-012AA
|
PDF
|
Si4416DY
Abstract: SOT96- 1
Text: Si4416DY N-channel enhancement mode field-effect transistor Rev. 01 — 05 June 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4416DY in SOT96-1 SO8 .
|
Original
|
Si4416DY
M3D315
OT96-1
OT96-1,
SOT96- 1
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V
|
Original
|
ITF86182SK8T
MS-012AA)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si4410DY N-channel enhancement mode field-effect transistor Rev. 01 — 20 Feb 2001 M3D315 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4410DY in SOT96-1 SO8 .
|
Original
|
Si4410DY
M3D315
OT96-1
OT96-1,
MBK187
|
PDF
|
MS-012AA
Abstract: PHK12NQ03LT
Text: PHK12NQ03LT TrenchMOS logic level FET Rev. 01 — 22 March 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1technology. Product availability: PHK12NQ03LT in SOT96-1 SO8 .
|
Original
|
PHK12NQ03LT
M3D315
PHK12NQ03LT
OT96-1
OT96-1,
MS-012AA
|
PDF
|
Si9410DY
Abstract: No abstract text available
Text: Si9410DY N-channel enhancement mode field-effect transistor Rev. 02 — 05 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9410DY in SOT96-1 SO8 .
|
Original
|
Si9410DY
M3D315
OT96-1
OT96-1,
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si9410DY N-channel enhancement mode field-effect transistor Rev. 01 — 15 May 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9410DY in SOT96-1 SO8 .
|
Original
|
Si9410DY
M3D315
OT96-1
OT96-1,
MBK187
MBB076
|
PDF
|
ITF86182SK8T
Abstract: MS-012AA TB370
Text: ITF86182SK8T Data Sheet 11A, 30V, 0.0115 Ohm, P-Channel, Logic Level, Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH File Number 4797.2 Features • Ultra Low On-Resistance - rDS(ON) = 0.0115Ω, VGS = −10V - rDS(ON) = 0.016Ω, VGS = −4.5V
|
Original
|
ITF86182SK8T
MS-012AA)
ITF86182SK8T
MS-012AA
TB370
|
PDF
|
03ac29
Abstract: HZG336 MS-012AA PHN103T
Text: PHN103T N-channel enhancement mode field-effect transistor Rev. 01 — 28 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHN103T in SOT96-1 SO8 .
|
Original
|
PHN103T
PHN103T
OT96-1
OT96-1,
03ac29
HZG336
MS-012AA
|
PDF
|
