Untitled
Abstract: No abstract text available
Text: ZC2812E ZC2813E SOT23 DUAL SCHOTTKY BARRIER DIODES ISSUE 3 -NOVEMBER 1995_ Q_ L . . . 1 •fr 2 3 3 2 SOT23 ZC2813E ZC2812E Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS. PARAMETER
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ZC2812E
ZC2813E
lplt-20m
ZC2811E
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Untitled
Abstract: No abstract text available
Text: Obsolete. Alternative is BSS123. ZXM41N10F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL SOT23 VALUE UNIT Drain-source voltage
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BSS123.
ZXM41N10F
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BAL74
Abstract: MARKING SOT23 jbs BAR74 SOT23 BAL74 BCW66
Text: BAL74/BAR74. Silicon Switching Diode • For high-speed switching applications BAL74 BAR74 ! ! Type BAL74 BAR74 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol
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BAL74/BAR74.
BAL74
BAR74
BAL74,
BAL74
MARKING SOT23 jbs
BAR74
SOT23 BAL74
BCW66
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ZXM41N0F
Abstract: No abstract text available
Text: ZXM41N0F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL SOT23 VALUE UNIT Drain-source voltage V DS 100 V Drain-gate voltage V DGR
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ZXM41N0F
ZXM41N0F
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ZXM41N0F
Abstract: ZXM41N10F
Text: ZXM41N10F SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET FEATURES • BVDSS = 100V • Low Threshold DEVICE MARKING • 410 ABSOLUTE MAXIMUM RATINGS PINOUT TOP VIEW PARAMETER SYMBOL SOT23 VALUE UNIT Drain-source voltage V DS 100 V Drain-gate voltage V DGR
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ZXM41N10F
ZXM41N0F
ZXM41N10F
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PDF
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BAL74
Abstract: BAR74 sot23 marking code 74
Text: BAL74/BAR74. Silicon Switching Diode For high-speed switching applications BAL74 BAR74 3 1 3 2 1 Type BAL74 BAR74 2 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol
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BAL74/BAR74.
BAL74
BAR74
BAL74
BAL74,
BAR74
sot23 marking code 74
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PDF
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BAL74
Abstract: BAR74
Text: BAL74/BAR74. Silicon Switching Diode For high-speed switching applications BAL74 BAR74 3 1 3 2 1 Type BAL74 BAR74 2 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol
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BAL74/BAR74.
BAL74
BAR74
BAL74
BAL74,
BAR74
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PXTA14
Abstract: mark a7 sot23 PMBZ52227B marking CODE M10 SOT89 dc/SOT89 MARKING CODE 3D 2PB710AR BST60 PMBTA14 PMBT4401
Text: Philips Semiconductors Surface Mounted Semiconductors Marking MARKING LIST Types in SOT23, SOT89, SOT143, SOT323, SOD123 and SOD323 envelopes are marked with a code as listed in the following tables. The actual type number and data code are on the packing.
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OT143,
OT323,
OD123
OD323
BZV49
BAW56W
BSR40
2PB709AR
BAW56
BSR41
PXTA14
mark a7 sot23
PMBZ52227B
marking CODE M10 SOT89
dc/SOT89 MARKING CODE 3D
2PB710AR
BST60
PMBTA14
PMBT4401
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marking 54 sot23
Abstract: ZC2812
Text: ZC2812E ZC2813E SOT23 DUAL SCHOTTKY BARRIER DIODES IS S U E 3 -NOVEMBER 1995_ Q _ 1. 1 1 3 3 - i XX XX 2 ' 2 SOT23 ZC2813E ZC2812E Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS, PA RA M ETER SYM BO L
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ZC2812E
ZC2813E
ZC2811E
marking 54 sot23
ZC2812
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sot23 DIODE marking AV
Abstract: marking D58 FLLD258 FLLD261 FLLD263 330 marking diode DSA003688
Text: SOT23 SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR FLLD258 ISSUE 2 SEPTEMBER 1995 ✪ 1 2 1 3 2 3 SOT23 PART MARKING DETAIL D58 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Repetitive Peak Reverse Voltage VRRM VALUE 100 UNIT V Average Rectified Forward Current
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FLLD258
400mA
-200mA
sot23 DIODE marking AV
marking D58
FLLD258
FLLD261
FLLD263
330 marking diode
DSA003688
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330 marking diode
Abstract: FLLD263 marking SOT23 V 4 diode NA MARKING SOT23 FLLD258 FLLD261 diode 100V 80 A IR 50 DSA003689 marking d63
Text: FLLD258 FLLD261 FLLD263 SOT23 SILICON PLANAR LOW LEAKAGE COMMON ANODE DIODE PAIR ISSUE 2 JANUARY 1996 FLLD263 ✪ DIODE PIN CONNECTION 1 2 1 TYPICAL CHARACTERISTICS 25 3 20 2 15 SOT23 PART MARKING DETAIL D63 10 5 3 ABSOLUTE MAXIMUM RATINGS. 20 40 60
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FLLD258
FLLD261
FLLD263
400mA
-200mA
330 marking diode
FLLD263
marking SOT23 V 4 diode
NA MARKING SOT23
FLLD258
FLLD261
diode 100V 80 A
IR 50
DSA003689
marking d63
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330 marking diode
Abstract: marking SOT23 V 4 diode FLLD258 FLLD261 FLLD263 MARKING P8A DSA003670
Text: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 SEPTEMBER 1995 ✪ DIODE PIN CONNECTION 2 1 3 3 2 1 SOT23 PART MARKING DETAIL P8A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Repetitive Peak Reverse Voltage VRRM VALUE 100 UNIT V Average Rectified Forward Current
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FLLD261
400mA
-200mA
330 marking diode
marking SOT23 V 4 diode
FLLD258
FLLD261
FLLD263
MARKING P8A
DSA003670
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PDF
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BAL74
Abstract: BAR74 BCW66
Text: BAL74/BAR74. Silicon Switching Diode • For high-speed switching applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAL74 BAR74 ! ! Type BAL74 BAR74 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified
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BAL74/BAR74.
BAL74
BAR74
BAL74
BAR74
BCW66
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SOT-143 MARKING 550
Abstract: S852T S868 T0-50 TEMIC S868T BFP183T
Text: Temic Semiconductors TOSO 4 Marking T050 (3) Part Number SOT23 Ibias(niA) Vd(V) SOT143 Gp(dB) (50 Q) BiPMICs (Bipolar Monolithic Integrated Circuit) S858TA1 S858TA3 S868T S860T S872T Marking Part Number 858 TA3 868 860 * VcEO V 30 30 45 3 85 5 3.6 5 1.8
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OT143
S858TA1
S858TA3
S868T
S860T
S872T
OT143
BFP67
BFP92A
BFP93A
SOT-143 MARKING 550
S852T
S868
T0-50
TEMIC S868T
BFP183T
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BAT18
Abstract: ASS infineon
Text: BAT18. Silicon RF Switching Diode Low-loss VHF / UHF switch above 10 MHz PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 D 1 1 2 1 D 2 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS nH Marking
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BAT18.
BAT18-04
BAT18-05
BAT18-04
BAT18-04,
BAT18
ASS infineon
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BAT18
Abstract: BAT18-05 BAT18-04
Text: BAT18. Silicon RF Switching Diode Low-loss VHF / UHF switch above 10 MHz PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 D 1 1 2 1 D 2 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS nH Marking
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BAT18.
BAT18-04
BAT18-05
BAT18-04,
Jan-07-2003
100MHz
BAT18
BAT18-05
BAT18-04
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Untitled
Abstract: No abstract text available
Text: SMBD7000/MMBD7000. Silicon Switching Diode Array • For high-speed switching applications SMBD7000/MMBD7000 ! , , Type SMBD7000/MMBD7000 Package SOT23 Configuration series Marking s5C Maximum Ratings at TA = 25°C, unless otherwise specified Parameter
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SMBD7000/MMBD7000.
SMBD7000/MMBD7000
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BC858C
Abstract: 65 marking sot23
Text: BC858C SOT23 PNP Transistors Features: • Silicon Planar Epitaxial Transistors. • PNP Transistors. Pin Configuration: 1. Base 2. Emitter 3. Collector Marking BC858C = 3L Dimensions : Millimetres Absolute Maximum Ratings - Symbol Collector-Emitter Voltage +VBE = 1V
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BC858C
BC858C
65 marking sot23
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Untitled
Abstract: No abstract text available
Text: SMBD7000/MMBD7000. Silicon Switching Diode Array • For high-speed switching applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 SMBD7000/MMBD7000 ! , , Type SMBD7000/MMBD7000 Package SOT23 Configuration series Marking
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SMBD7000/MMBD7000.
SMBD7000/MMBD7000
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design ideas
Abstract: FMMT591A 91A SOT23 FMMT491A TS16949 ZETEX complementary transistor PRODUCT LINE
Text: A Product Line of Diodes Incorporated FMMT591A SOT23 PNP silicon planar medium power transistor Features Low equivalent on resistance RCE sat = 350m⍀ at 1A Part Marking Detail -91A Complementary type -FMMT491A Absolute maximum ratings. Parameter Symbol
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FMMT591A
-FMMT491A
D-81541
TX75248,
design ideas
FMMT591A
91A SOT23
FMMT491A
TS16949
ZETEX complementary transistor PRODUCT LINE
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Untitled
Abstract: No abstract text available
Text: SMBD914/MMBD914. Silicon Switching Diode • For high-speed switching applications SMBD914/MMBD914 ! Type SMBD914/MMBD914 Package SOT23 Configuration single Marking s5D Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage
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SMBD914/MMBD914.
SMBD914/MMBD914
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BAV170
Abstract: BCW66
Text: BAV170. Silicon Low Leakage Diode Array • Low-leakage applications • Medium speed switching times • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAV170 ! , , Type Package Configuration Marking BAV170 SOT23 common cathode
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BAV170.
BAV170
BAV170
BCW66
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FMMTA42
Abstract: FMMTA92 TS16949 semiconductors 3E
Text: FMMTA42 SOT23 NPN Silicon planar high voltage transistor Device marking FMMTA42 - 3E Complementary types FMMTA92 Absolute maximum ratings Parameter Collector-base voltage Symbol VCBO FMMTA42 300 Unit V Collector-emitter voltage VCEO 300 V Emitter-base voltage
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FMMTA42
FMMTA42
FMMTA92
D-81541
FMMTA92
TS16949
semiconductors 3E
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PDF
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Untitled
Abstract: No abstract text available
Text: SMBD914/MMBD914. Silicon Switching Diode • For high-speed switching applications SMBD914/MMBD914 3 1 2 Type SMBD914/MMBD914 Package SOT23 Configuration single Marking s5D Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value
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SMBD914/MMBD914.
SMBD914/MMBD914
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PDF
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