BAL74
Abstract: MARKING SOT23 jbs BAR74 SOT23 BAL74 BCW66
Text: BAL74/BAR74. Silicon Switching Diode • For high-speed switching applications BAL74 BAR74 ! ! Type BAL74 BAR74 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol
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BAL74/BAR74.
BAL74
BAR74
BAL74,
BAL74
MARKING SOT23 jbs
BAR74
SOT23 BAL74
BCW66
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PDF
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BAS20 SOT23
Abstract: bas21 jss BAS19 BAS20 BAS21
Text: BAS19.BAS21 3 Silicon Switching Diodes High-speed, high-voltage switching applications 2 1 1 VPS05161 3 EHA07002 Type Marking Pin Configuration Package BAS19 JPs 1=A 2 = n.c. 3=C SOT23 BAS20 JRs 1=A 2 = n.c. 3=C SOT23 BAS21 JSs 1=A 2 = n.c. 3=C SOT23 Maximum Ratings
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Original
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BAS19.
BAS21
VPS05161
EHA07002
BAS19
BAS20
BAS20 SOT23
bas21 jss
BAS19
BAS20
BAS21
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PDF
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BAL74
Abstract: BAR74 sot23 marking code 74
Text: BAL74/BAR74. Silicon Switching Diode For high-speed switching applications BAL74 BAR74 3 1 3 2 1 Type BAL74 BAR74 2 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol
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Original
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BAL74/BAR74.
BAL74
BAR74
BAL74
BAL74,
BAR74
sot23 marking code 74
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PDF
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BAL74
Abstract: BAR74
Text: BAL74/BAR74. Silicon Switching Diode For high-speed switching applications BAL74 BAR74 3 1 3 2 1 Type BAL74 BAR74 2 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol
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Original
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BAL74/BAR74.
BAL74
BAR74
BAL74
BAL74,
BAR74
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PDF
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sot23 DIODE marking AV
Abstract: marking D58 FLLD258 FLLD261 FLLD263 330 marking diode DSA003688
Text: SOT23 SILICON PLANAR LOW LEAKAGE COMMON CATHODE DIODE PAIR FLLD258 ISSUE 2 SEPTEMBER 1995 ✪ 1 2 1 3 2 3 SOT23 PART MARKING DETAIL D58 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Repetitive Peak Reverse Voltage VRRM VALUE 100 UNIT V Average Rectified Forward Current
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Original
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FLLD258
400mA
-200mA
sot23 DIODE marking AV
marking D58
FLLD258
FLLD261
FLLD263
330 marking diode
DSA003688
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PDF
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330 marking diode
Abstract: FLLD263 marking SOT23 V 4 diode NA MARKING SOT23 FLLD258 FLLD261 diode 100V 80 A IR 50 DSA003689 marking d63
Text: FLLD258 FLLD261 FLLD263 SOT23 SILICON PLANAR LOW LEAKAGE COMMON ANODE DIODE PAIR ISSUE 2 JANUARY 1996 FLLD263 ✪ DIODE PIN CONNECTION 1 2 1 TYPICAL CHARACTERISTICS 25 3 20 2 15 SOT23 PART MARKING DETAIL D63 10 5 3 ABSOLUTE MAXIMUM RATINGS. 20 40 60
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Original
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FLLD258
FLLD261
FLLD263
400mA
-200mA
330 marking diode
FLLD263
marking SOT23 V 4 diode
NA MARKING SOT23
FLLD258
FLLD261
diode 100V 80 A
IR 50
DSA003689
marking d63
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PDF
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Untitled
Abstract: No abstract text available
Text: SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3 High collector current High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage
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Original
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SMBTA63,
SMBTA64
SMBTA63
VPS05161
EHP00364
EHP00215
EHP00415
EHP00365
Aug-20-2001
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PDF
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S2V 80
Abstract: SMBTA63 SMBTA64
Text: SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3 High collector current High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage
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Original
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SMBTA63,
SMBTA64
SMBTA63
VPS05161
EHP00364
EHP00215
EHP00415
EHP00365
Nov-30-2001
S2V 80
SMBTA63
SMBTA64
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PDF
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Untitled
Abstract: No abstract text available
Text: BAL74/BAR74. Silicon Switching Diode • For high-speed switching applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAL74 BAR74 ! ! Type BAL74 BAR74 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified
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Original
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BAL74/BAR74.
BAL74
BAR74
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PDF
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Untitled
Abstract: No abstract text available
Text: SMBTA63, SMBTA64 PNP Silicon Darlington Transistors 3 High collector current High DC current gain 2 1 Type Marking Pin Configuration SMBTA63 s2U 1=B 2=E 3=C SOT23 SMBTA64 s2V 1=B 2=E 3=C SOT23 VPS05161 Package Maximum Ratings Parameter Symbol Collector-emitter voltage
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Original
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SMBTA63,
SMBTA64
VPS05161
SMBTA63
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PDF
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330 marking diode
Abstract: marking SOT23 V 4 diode FLLD258 FLLD261 FLLD263 MARKING P8A DSA003670
Text: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 SEPTEMBER 1995 ✪ DIODE PIN CONNECTION 2 1 3 3 2 1 SOT23 PART MARKING DETAIL P8A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Repetitive Peak Reverse Voltage VRRM VALUE 100 UNIT V Average Rectified Forward Current
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Original
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FLLD261
400mA
-200mA
330 marking diode
marking SOT23 V 4 diode
FLLD258
FLLD261
FLLD263
MARKING P8A
DSA003670
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PDF
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BAL74
Abstract: BAR74 BCW66
Text: BAL74/BAR74. Silicon Switching Diode • For high-speed switching applications • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAL74 BAR74 ! ! Type BAL74 BAR74 Package SOT23 SOT23 Configuration single single Marking JCs JBs Maximum Ratings at TA = 25°C, unless otherwise specified
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Original
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BAL74/BAR74.
BAL74
BAR74
BAL74
BAR74
BCW66
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PDF
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Untitled
Abstract: No abstract text available
Text: SMBTA13, SMBTA14 NPN Silicon Darlington Transistors 3 High DC current gain High collector current Low collector-emitter saturation voltage 2 1 Type Marking Pin Configuration SMBTA13 s1M 1=B 2=E 3=C SOT23 SMBTA14 s1N 1=B 2=E 3=C SOT23 VPS05161 Package
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Original
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SMBTA13,
SMBTA14
VPS05161
SMBTA13
SMBTA14
EHP00826
EHP00827
EHP00828
EHP00829
Nov-30-2001
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PDF
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Untitled
Abstract: No abstract text available
Text: SOT23 SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR FLLD261 ISSUE 2 - SEPTEMBER 1995 O '- DIODE PIN CO NNECTION — N r^H 1 3 SOT23 PART MARKING DETAIL - P8A A BSO LU TE M A X IM U M RATINGS. PARAM ETER SYM BO L Repetitive Peak Reverse Voltage
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OCR Scan
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FLLD261
f100V,
-200m
FLLD263
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: BCV27, BCV47 NPN Silicon Darlington Transistors 3 For general AF applications High collector current High current gain Complementary types: BCV26, BCV46 PNP 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23
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Original
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BCV27,
BCV47
BCV26,
BCV46
VPS05161
BCV27
BCV47
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PDF
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Untitled
Abstract: No abstract text available
Text: BCV26, BCV46 PNP Silicon Darlington Transistors 3 For general AF applications High collector current High current gain Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23
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Original
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BCV26,
BCV46
BCV27,
BCV47
VPS05161
BCV26
BCV46
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PDF
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Marking Code FGs
Abstract: No abstract text available
Text: BCV27, BCV47 NPN Silicon Darlington Transistors 3 For general AF applications High collector current High current gain Complementary types: BCV26, BCV46 PNP 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23
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Original
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BCV27,
BCV47
BCV26,
BCV46
VPS05161
BCV27
BCV47
Marking Code FGs
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PDF
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MV SOT23
Abstract: ZC2812E NA MARKING SOT23 test SOt23 ZC2811E NA SOT23 sot23 1V ZC2813E marking 54 sot23
Text: SOT23 DUAL SCHOTTKY BARRIER DIODES ISSUE 3 - NOVEMBER 1995 ZC2812E ZC2813E ✪ 1 1 2 1 3 2 3 3 2 ZC2813E ZC2812E SOT23 Device Common Anode Series Type 13E 12E Part Marking ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Power Dissipation at Tamb = 25°C Ptot Operating and Storage Temperature Range
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Original
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ZC2812E
ZC2813E
ZC2811E
MV SOT23
ZC2812E
NA MARKING SOT23
test SOt23
NA SOT23
sot23 1V
ZC2813E
marking 54 sot23
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PDF
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BCV26
Abstract: BCV27 BCV46 BCV47
Text: BCV26, BCV46 PNP Silicon Darlington Transistors 3 For general AF applications High collector current High current gain Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23
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Original
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BCV26,
BCV46
BCV27,
BCV47
BCV26
VPS05161
EHP00295
BCV26
BCV27
BCV46
BCV47
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PDF
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Untitled
Abstract: No abstract text available
Text: BCV26, BCV46 PNP Silicon Darlington Transistors 3 For general AF applications High collector current High current gain Complementary types: BCV27, BCV47 NPN 2 1 Type Marking Pin Configuration BCV26 FDs 1=B 2=E 3=C SOT23 BCV46 FEs 1=B 2=E 3=C SOT23
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Original
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BCV26,
BCV46
BCV27,
BCV47
VPS05161
BCV26
BCV46
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PDF
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fgs npn
Abstract: BCV26 BCV27 BCV46 BCV47
Text: BCV27, BCV47 NPN Silicon Darlington Transistors 3 For general AF applications High collector current High current gain Complementary types: BCV26, BCV46 PNP 2 1 Type Marking Pin Configuration BCV27 FFs 1=B 2=E 3=C SOT23 BCV47 FGs 1=B 2=E 3=C SOT23
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Original
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BCV27,
BCV47
BCV26,
BCV46
BCV27
VPS05161
EHP00304
fgs npn
BCV26
BCV27
BCV46
BCV47
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PDF
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BAT18
Abstract: ASS infineon
Text: BAT18. Silicon RF Switching Diode Low-loss VHF / UHF switch above 10 MHz PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 D 1 1 2 1 D 2 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS nH Marking
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Original
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BAT18.
BAT18-04
BAT18-05
BAT18-04
BAT18-04,
BAT18
ASS infineon
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PDF
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BAT18
Abstract: ASS infineon
Text: BAT18. Silicon RF Switching Diode Low-loss VHF / UHF switch above 10 MHz PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 D 1 1 2 1 D 2 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS nH Marking
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Original
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BAT18.
BAT18-04
BAT18-05
BAT18-04
BAT18-04,
BAT18
ASS infineon
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PDF
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BAT18
Abstract: BAT18-05 BAT18-04
Text: BAT18. Silicon RF Switching Diode Low-loss VHF / UHF switch above 10 MHz PIN diode with low forward resistance BAT18-04 BAT18-05 3 3 D 1 D 2 D 1 1 2 1 D 2 2 Type BAT18-04 BAT18-05 Package SOT23 SOT23 Configuration series common cathode LS nH Marking
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Original
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BAT18.
BAT18-04
BAT18-05
BAT18-04,
Jan-07-2003
100MHz
BAT18
BAT18-05
BAT18-04
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PDF
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