irfb4115
Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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element-14
F155-6A
F155-10A
F165-15A
F175-25A
irfb4115
BTY79 equivalent
diode skn 21-04
marking CODE W04 sot-23
bbc 598 479 DIODE
mw 137 600g
TFK 401 S 673
Vishay Telefunken tfk transistor
INFINEON transistor marking W31
JYs marking transistor
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Untitled
Abstract: No abstract text available
Text: Product specification DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed
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DMN3112S
AEC-Q101
J-STD-020
MIL-STD-202,
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Untitled
Abstract: No abstract text available
Text: TSM2306 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(m) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 57 @ VGS =10V 3.5 94 @ VGS =4.5V 2.8 Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance
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TSM2306
OT-23
TSM2306CX
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TSM2306
Abstract: TSM2306CX IDA57 n-channel mosfet transistor n-channel mosfet SOT-23
Text: TSM2306 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 57 @ VGS =10V 3.5 94 @ VGS =4.5V 2.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
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TSM2306
OT-23
TSM2306CX
TSM2306
IDA57
n-channel mosfet transistor
n-channel mosfet SOT-23
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Untitled
Abstract: No abstract text available
Text: TSM2306 30V N-Channel MOSFET SOT-23 PRODUCT SUMMARY VDS V RDS(on)(mΩ) Pin Definition: 1. Gate 2. Source 3. Drain 30 Features ID (A) 57 @ VGS = 10V 3.5 94 @ VGS = 4.5V 2.8 Block Diagram ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance
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TSM2306
OT-23
TSM2306CX
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DS3920
Abstract: XG-PON 10G-EPON MAX4007 Photodiode apd current mirror XGPON ONU
Text: 19-5797; Rev 1; 8/11 DS3920 Fast Current Mirror General Description The DS3920 precision current mirror is designed for avalanche photodiode APD and PIN photodiode biasing and monitoring applications. The device offers a current clamp to limit current through the APD and a current mirror output that produces a signal proportional (5:1) to the
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DS3920
DS3920
250nA
XG-PON
10G-EPON
MAX4007
Photodiode apd
current mirror
XGPON ONU
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Untitled
Abstract: No abstract text available
Text: DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • Mechanical Data Low On-Resistance: • 57mΩ @ VGS = 10V • 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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DMN3112S
AEC-Q101
J-STD-020
DS31445
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Untitled
Abstract: No abstract text available
Text: DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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PDF
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DMN3112S
AEC-Q101
J-STD-020
MIL-STD-202,
DS31445
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Untitled
Abstract: No abstract text available
Text: DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • • • • • • • • Mechanical Data • • Low On-Resistance: 57m @ VGS = 10V 112m @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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DMN3112S
AEC-Q101
J-STD-020
MIL-STD-202,
DS31445
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Untitled
Abstract: No abstract text available
Text: 19-5797; Rev 2; 12/11 DS3920 Fast Current Mirror General Description Features The DS3920 precision current mirror is designed for avalanche photodiode APD and PIN photodiode biasing and monitoring applications. The device offers a current clamp to limit current through the APD and a current mirror output that produces a signal proportional (5:1) to the
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DS3920
DS3920
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XG-PON
Abstract: avalanche photodiode bias DS3920 current mirror XG-PON OLT 100-FA
Text: 19-5797; Rev 2; 12/11 DS3920 Fast Current Mirror General Description The DS3920 precision current mirror is designed for avalanche photodiode APD and PIN photodiode biasing and monitoring applications. The device offers a current clamp to limit current through the APD and a current mirror output that produces a signal proportional (5:1) to the
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DS3920
DS3920
250nA
XG-PON
avalanche photodiode bias
current mirror
XG-PON OLT
100-FA
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current mirror
Abstract: XG-PON XG-PON OLT XGPON ONU
Text: 19-5797; Rev 0; 3/11 DS3920 Fast Current Mirror General Description The DS3920 precision current mirror is designed for avalanche photodiode APD and PIN photodiode biasing and monitoring applications. The device offers a current clamp to limit current through the APD and a current mirror output that produces a signal proportional (5:1) to the
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DS3920
current mirror
XG-PON
XG-PON OLT
XGPON ONU
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Untitled
Abstract: No abstract text available
Text: NOT RECOMMENDED FOR NEW DESIGN USE DMN3110S DMN3112S N-CHANNEL ENHANCEMENT MODE MOSFET Features • Mechanical Data Low On-Resistance: • 57mΩ @ VGS = 10V • 112mΩ @ VGS = 4.5V Low Gate Threshold Voltage Low Input Capacitance
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DMN3110S
DMN3112S
AEC-Q101
J-STD-020
DS31445
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DMN3112S
Abstract: marking ANs J-STD-020D
Text: DMN3112S N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: 57mΩ @ VGS = 10V 112mΩ @ VGS = 4.5V
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DMN3112S
AEC-Q101
OT-23
J-STD-020D
MIL-STD-202,
DS31445
DMN3112S
marking ANs
J-STD-020D
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3K14
Abstract: N-CHANNEL MOSFET 30V 2A SOT-23 2A MARKING SOT23
Text: CYStech Electronics Corp. Spec. No. : C427N3 Issued Date : 2008.05.16 Revised Date : Page No. : 1/7 30V N-CHANNEL Enhancement Mode MOSFET MTN3K14N3 Features • VDS=30V RDS ON =39mΩ@VGS=10V, ID=2A RDS(ON)=57mΩ@VGS=4.5V, ID=2A • Low on-resistance • High speed : ton=24ns(typ.), toff=19ns(typ.)
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C427N3
MTN3K14N3
OT-23
UL94V-0
3K14
N-CHANNEL MOSFET 30V 2A SOT-23
2A MARKING SOT23
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marking code SS SOT23
Abstract: marking N03
Text: PJS50N03 30V N-CHANNEL ENHANCEMENT MODE MOSFET VOLTAGE 30 Volts CURRENT 2.9 Amperes FEATURES • RDS ON , VGS@10V,[email protected]< 57 mΩ • RDS(ON), [email protected],[email protected]< 94 mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance
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PJS50N03
2002/95/EC
IEC61249
OT-23
MIL-STD-750
0084grams
2012-REV
RB500V-40
PJS50N03
marking code SS SOT23
marking N03
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Untitled
Abstract: No abstract text available
Text: PJS50N03 30V N-CHANNEL ENHANCEMENT MODE MOSFET VOLTAGE 30 Volts CURRENT 2.9 Amperes FEATURES • RDS ON , VGS@10V,[email protected]< 57 mΩ • RDS(ON), [email protected],[email protected]< 94 mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance
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PJS50N03
2002/95/EC
IEC61249
OT-23
MIL-STD-750
0084grams
2012-REV
RB500V-40
PJS50N03
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Untitled
Abstract: No abstract text available
Text: PJA94N03 30V N-CHANNEL ENHANCEMENT MODE MOSFET VOLTAGE 30 Volts CURRENT 2.9 Amperes FEATURES • RDS ON , VGS@10V,[email protected]< 57 mΩ • RDS(ON), [email protected],[email protected]< 94 mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance
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PJA94N03
2002/95/EC
IEC61249
OT-23
MIL-STD-750
0084grams
2011-REV
RB500V-40
PJA94N03
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Untitled
Abstract: No abstract text available
Text: PJA94N03 30V N-CHANNEL ENHANCEMENT MODE MOSFET VOLTAGE 30 Volts CURRENT 2.9 Amperes FEATURES • RDS ON , VGS@10V,[email protected]< 57 mΩ • RDS(ON), [email protected],[email protected]< 94 mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance
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PJA94N03
2002/95/EC
IEC61249
OT-23
MIL-STD-750
0084grams
2011-REV
RB500V-40
PJA94N03
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Untitled
Abstract: No abstract text available
Text: PJA94N03 30V N-CHANNEL ENHANCEMENT MODE MOSFET VOLTAGE 30 Volts CURRENT 2.9 Amperes FEATURES • RDS ON , VGS@10V,[email protected]< 57 mΩ • RDS(ON), [email protected],[email protected]< 94 mΩ • Advanced Trench Process Technology • High Density Cell Design For Ultra Low On-Resistance
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PJA94N03
2002/95/EC
IEC61249
OT-23
MIL-STD-750
0084grams
2011-REV
RB500V-40
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c639
Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05
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3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
c33840
transistor C639
c33725
c877
C63716
marking code 67a sot23 6
c878
c33740
F423
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transistor C639
Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W
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3-02W
3-03W
3-04W
3-05W
3-06W
4-02W
4-03W
4-04W
4-05W
4-06W
transistor C639
c639
transistor f423
F423
transistor f422
transistor f422 equivalent
cx59
C640-10
f422
c640 transistor
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68w11
Abstract: marking code 27E SOT 23 sot23 marking code tab MARKING 27E marking code 27e 000012a kn sot23 68-W11 sot-23 Marking yr F 7389
Text: 3 i a m a b ooooizfi 4 • 57E D ELECTRO-FILMS INC The Electro-Films, Inc. Micro Divider provides the optim um in precision, stability, and size for all surface m ount potential divider applications. It is molded in an SOT-23 style package with total resistor
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OCR Scan
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OT-23
OT-23.
000012a
-520ppm
-25ppm
68w11
marking code 27E SOT 23
sot23 marking code tab
MARKING 27E
marking code 27e
kn sot23
68-W11
sot-23 Marking yr
F 7389
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c639
Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04
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OCR Scan
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3-03W
4-03W
5-03W
OD-123
OD-323
OT-23
c639
C63716
C337 40
sot-23 MARKING 636
MARKING 68W SOT-23
C-639
F959
sot143 Marking code 5B
B304A
sot-89 MARKING CODE BN
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