Untitled
Abstract: No abstract text available
Text: Package outline Earless flanged balanced ceramic package; 4 leads SOT539B D A F 5 D1 D U1 H1 w2 1 c D 2 E1 U2 H E L 3 4 w3 b Q e 5 10 mm scale Dimensions Unit 1 A b 4.7 11.81 4.2 11.56 w2 w3 0.25 0.25 max 0.185 0.465 0.007 1.242 1.241 0.374 0.375 0.069 0.674 1.005 0.137 0.089 1.275 0.405
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OT539B
50nsions
sot539b
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sot539bpo
Abstract: No abstract text available
Text: Package outline Earless flanged balanced ceramic package; 4 leads SOT539B D A F 5 D1 D U1 H1 w2 1 c D 2 E1 U2 H E L 3 4 w3 b Q e 5 10 mm scale Dimensions Unit 1 A b 4.7 11.81 4.2 11.56 c D D1 E E1 0.18 31.55 31.52 9.5 9.53 0.10 30.94 30.96 9.3 9.27 e F H
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OT539B
OT539B
sot539b
sot539bpo
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sot539b
Abstract: philips h1
Text: PDF: 1999 Dec 17 Philips Semiconductors Package outline Earless flanged balanced LDMOST package; 4 leads SOT539B Package under development Philips Semiconductors reserves the right to make changes without notice. D A F D D1 U1 w2 M D M H1 1 c 2 E1 H U2 E 5
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OT539B
sot539b
philips h1
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sot1244c
Abstract: RF Power blf8g10 BLF8G10LS sot1242 how to test transistor "RF Power Transistor" sot539b RF power transistor
Text: RF Power Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth Factsheet 001 — July 2012 Factsheet 1. Gen8 LDMOS RF power transistor with Video Bandwidth VBW The proliferation of standards in the cellular base-station market has triggered power
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70MHz.
60MHz
sot1244c
RF Power
blf8g10
BLF8G10LS
sot1242
how to test transistor
"RF Power Transistor"
sot539b
RF power transistor
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150P
Abstract: BLF7G27LS-150P ACPR1980 ACPR885
Text: BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor Rev. 1 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance
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BLF7G27L-150P;
BLF7G27LS-150P
IS-95
ACPR885k
IS-95
BLF7G27L-150P
7G27LS-150P
150P
BLF7G27LS-150P
ACPR1980
ACPR885
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BLF6G20(S)-45
Abstract: No abstract text available
Text: BLF6G20-230PRN; BLF6G20S-230PRN Power LDMOS transistor Rev. 02 — 9 February 2010 Product data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF6G20-230PRN;
BLF6G20S-230PRN
BLF6G20-230PRN
20S-230PRN
BLF6G20(S)-45
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Untitled
Abstract: No abstract text available
Text: BLF8G24L-200P; BLF8G24LS-200P Power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance
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BLF8G24L-200P;
BLF8G24LS-200P
BLF8G24L-200P
LS-200P
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Untitled
Abstract: No abstract text available
Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF888A;
BLF888AS
narrow15
BLF888A
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SMD EZ 648
Abstract: smd transistor l32 smd transistor L33 smd transistor l31 J2151 J15-12
Text: BLF988; BLF988S Power LDMOS transistor Rev. 1 — 9 October 2012 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF988;
BLF988S
BLF988
SMD EZ 648
smd transistor l32
smd transistor L33
smd transistor l31
J2151
J15-12
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BLF888B
Abstract: smd transistor L33 Technical Specifications of DVB-T2 Transmitter
Text: BLF888B; BLF888BS UHF power LDMOS transistor Rev. 1 — 17 October 2011 Product data sheet 1. Product profile 1.1 General description A 650 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog
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BLF888B;
BLF888BS
BLF888B
smd transistor L33
Technical Specifications of DVB-T2 Transmitter
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Untitled
Abstract: No abstract text available
Text: BLF8G20LS-260A Power LDMOS transistor Rev. 2 — 9 November 2012 Preliminary data sheet 1. Product profile 1.1 General description 260 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz.
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BLF8G20LS-260A
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Untitled
Abstract: No abstract text available
Text: BLF2425M6L180P; BLF2425M6LS180P Power LDMOS transistor Rev. 2 — 20 September 2012 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz.
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BLF2425M6L180P;
BLF2425M6LS180P
2002/95/EC,
BLF2425M6L180P
25M6LS180P
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Untitled
Abstract: No abstract text available
Text: BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance
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BLF7G20L-250P;
BLF7G20LS-250P
BLF7G20L-250P
7G20LS-250P
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J37 transistor
Abstract: No abstract text available
Text: BLF8G20LS-260A Power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1.
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BLF8G20LS-260A
J37 transistor
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Untitled
Abstract: No abstract text available
Text: BLF2425M7L250P; BLF2425M7LS250P Power LDMOS transistor Rev. 3 — 26 February 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.
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BLF2425M7L250P;
BLF2425M7LS250P
BLF2425M7L250P
BLF2425M7LS250P
2425M7LS250P
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Untitled
Abstract: No abstract text available
Text: BLF2425M6L180P; BLF2425M6LS180P Power LDMOS transistor Rev. 1 — 7 February 2012 Objective data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for various applications such as ISM and industrial heating at frequencies from 2400 MHz to 2500 MHz.
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BLF2425M6L180P;
BLF2425M6LS180P
BLF2425M6L180P
25M6LS180P
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j353 transistor
Abstract: BLF7G20LS-250P transistor j353 800B JESD625-A RF35
Text: BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Rev. 3 — 1 March 2011 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance
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BLF7G20L-250P;
BLF7G20LS-250P
BLF7G20L-250P
7G20LS-250P
j353 transistor
BLF7G20LS-250P
transistor j353
800B
JESD625-A
RF35
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Untitled
Abstract: No abstract text available
Text: BLF6G10L-260PRN; BLF6G10LS-260PRN Power LDMOS transistor Rev. 2 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 260 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance
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BLF6G10L-260PRN;
BLF6G10LS-260PRN
BLF6G10L-260PRN
LS-260PRN
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BLF188XR NXP
Abstract: No abstract text available
Text: BLF188XR; BLF188XRS Power LDMOS transistor Rev. 2 — 12 July 2013 Objective data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1.
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BLF188XR;
BLF188XRS
BLF188XR
BLF188XR NXP
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Untitled
Abstract: No abstract text available
Text: BLA6H0912L-1000; BLA6H0912LS-1000 LDMOS avionics power transistor Rev. 1 — 4 November 2013 Objective data sheet 1. Product profile 1.1 General description 1000 W LDMOS pulsed power transistor intended for TCAS and IFF applications at 1030 MHz. Table 1. Test information
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BLA6H0912L-1000;
BLA6H0912LS-1000
BLA6H0912L-1000
0912LS-1000
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BLF188XR NXP
Abstract: blf188
Text: BLF188XR; BLF188XRS Power LDMOS transistor Rev. 5 — 12 November 2013 Product data sheet 1. Product profile 1.1 General description A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band. Table 1.
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BLF188XR;
BLF188XRS
BLF188XR
BLF188XR NXP
blf188
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BFG591 amplifier
Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
Text: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP
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TFF1007HN
TFF11070HN
TFF11073HN
TFF11077HN
TFF11080HN
TFF11084HN
TFF11088HN
TFF11092HN
TFF11096HN
TFF11101HN
BFG591 amplifier
5.8GHz Analog RF mmic
MRF6Vp3450
nxp Standard Marking BLF6G21-10G
FET 2N5459
RF LNB C band chipset
radar 77 ghz sige
82 sot363-6
Dect antenna
smd code marking ft sot23
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Untitled
Abstract: No abstract text available
Text: BLS7G2729L-350P; BLS7G2729LS-350P LDMOS S-band radar power transistor Rev. 5 — 16 May 2014 Product data sheet 1. Product profile 1.1 General description 350 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz.
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BLS7G2729L-350P;
BLS7G2729LS-350P
BLS7G2729L-350P
LS-350P
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QUBiC4X
Abstract: BGX7300 power amplifier NXP BLF7G20LS-90P BGA7202 printed antenna dcs 1800 BLP7G10S-140P BLF578XR qubic4 BGU705 Thin Film Resistors SiCr
Text: Your partner in mobile communication infrastructure design High Performance RF for wireless infrastructure Looking for a partner who can help you meet the challenges of wireless infrastructure base station design? As a global leader in RF technology and component design, NXP Semiconductors offers
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12x12
LQFP48
QUBiC4X
BGX7300
power amplifier NXP BLF7G20LS-90P
BGA7202
printed antenna dcs 1800
BLP7G10S-140P
BLF578XR
qubic4
BGU705
Thin Film Resistors SiCr
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