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    SPN2302S23RG Datasheets (1)

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    SPN2302S23RG SYNC Power N-Channel Enhancement Mode MOSFET Original PDF

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    SPN2302

    Abstract: SPN2302S23RG
    Text: SPN2302 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		SPN2302 SPN2302 SPN2302S23RG PDF

    SPN2302

    Abstract: MOSFET SPN2302S23RG sot 26 N-Channel MOSFET
    Text: SPN2302 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		SPN2302 SPN2302 MOSFET SPN2302S23RG sot 26 N-Channel MOSFET PDF

    SPN2302

    Abstract: SPN2302S23RG
    Text: SPN2302 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2302 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		SPN2302 SPN2302 SPN2302S23RG PDF