SPP46N03 Search Results

SPP46N03 Datasheets (9)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SPP46N03		Infineon Technologies	SIPMOS Power Transistor		Original	PDF
SPP46N03		Siemens			Original	PDF
SPP46N03		Siemens			Original	PDF
SPP46N03		Siemens			Original	PDF
SPP46N03		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF
SPP46N03L		Infineon Technologies	SIPMOS Power Transistor		Original	PDF
SPP46N03L		Siemens			Original	PDF
SPP46N03L		Siemens			Original	PDF
SPP46N03L		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF

SPP46N03 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Q67040-S4145-A3 Abstract: Q67040-S4742-A2 SPB46N03 SPP46N03 Text: SPP46N03 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.015 Ω Continuous drain current ID Enhancement mode • Avalanche rated 30 V 46 A • dv/dt rated • 175°C operating temperature	Original	SPP46N03 P-TO220-3-1 Q67040-S4742-A2 SPB46N03 P-TO263-3-2 Q67040-S4145-A3 SPB46N03 SPP46N03	PDF
SPB46N03 Abstract: SPP46N03 Text: SPP46N03 SPB46N03 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • dv/dt rated • 175°C operating temperature Type VDS ID RDS on SPP46N03 30 V 46 A 0.015 Ω Pin 1 Pin 2 Pin 3 G D S Package Ordering Code	Original	SPP46N03 SPB46N03 P-TO220-3-1 Q67040-S4145-A2 P-TO263-3-2 Q67040-S4742-A3 SPB46N03 SPP46N03	PDF
SPB46N03L Abstract: SPP46N03L WA11-0 Text: SPP46N03L SPB46N03L Preliminary data SIPMOS  Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175°C operating temperature Type VDS ID SPP46N03L 30 V 46 A SPB46N03L RDS on @ VGS 0.018 Ω VGS = 4.5 V	Original	SPP46N03L SPB46N03L P-TO220-3-1 Q67040-S4147-A2 P-TO263-3-2 Q67040-S4743-A3 SPB46N03L SPP46N03L WA11-0	PDF
46n03l Abstract: 46N03 SPB46N03L SPP46N03L Text: SPP 46N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.012 Ω Continuous drain current ID Enhancement mode • Avalanche rated 30 V 46 A • Logic Level • dv/dt rated	Original	46N03L SPP46N03L P-TO220-3-1 Q67040-S4147-A2 SPB46N03L P-TO263-3-2 Q67040-S4743-A2 46n03l 46N03 SPB46N03L SPP46N03L	PDF
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620	PDF
BUZ MOSFET Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D Text: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package	Original	615NV OT-223 20iemens B152-H6493-G5-X-7600 BUZ MOSFET mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D	PDF
46N03 Abstract: Q67040-S4145-A3 Q67040-S4742-A2 SPB46N03 SPP46N03 Text: SPP 46N03 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS on 0.015 Ω Continuous drain current ID Enhancement mode • Avalanche rated 30 V 46 A • dv/dt rated • 175˚C operating temperature	Original	46N03 SPP46N03 P-TO220-3-1 Q67040-S4742-A2 SPB46N03 P-TO263-3-2 Q67040-S4145-A3 46N03 SPB46N03 SPP46N03	PDF
smd code 46n Abstract: SPB46N03L smd diode 46A 46n03l Text: SIEMENS SPP46N03L SPB46N03L Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated • Logic Level • dv/df rated • 175°C operating temperature Type SPP46N03L Vfes 30 V b f lDS on @ VGS 46 A SPB46N03L 0.018 Q	OCR Scan	SPP46N03L SPB46N03L SPB46N03L P-T0220-3-1 P-T0263-3-2 Q67040-S4147-A2 Q67040-S4743-A3 smd code 46n smd diode 46A 46n03l	PDF
transistor SMD 1gs Abstract: 46n03l smd 1Gs SD-46 Diode Text: , • - SPP 46N03L Inf ineon technology SIPMOS Power Transistor Product Summary Features Drain source voltage • N channel ^D S Drain-Source on-state resistance . Enhancement mode f l D S o n Continuous drain current • Avalanche rated 30 V 0 .0 1 2	OCR Scan	46N03L SPP46N03L P-T0220-3-1 Q67040-S4147-A2 SPB46N03L P-T0263-3-2 Q67040-S4743-A2 S35bQ5 Q133777 SQT-89 transistor SMD 1gs 46n03l smd 1Gs SD-46 Diode	PDF
BUZ MOSFET Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S Text: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8	OCR Scan	615NV BSP318S BUZ MOSFET mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S	PDF
Untitled Abstract: No abstract text available Text: SPP 46N03 Infineon technologias SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance • Avalanche rated Continuous drain current ^DS on 0.015 n A 46 b V 30 • d v/df rated	OCR Scan	46N03 -T0220-3-1 67040-S 742-A 145-A 0235bG5 Q133777 SQT-89 B535bQ5	PDF