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    SQ2389ES Price and Stock

    Vishay Siliconix SQ2389ES-T1_BE3

    MOSFET P-CH 40V 4.1A SOT23-3
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    DigiKey SQ2389ES-T1_BE3 Cut Tape 64,804 1
    • 1 $1.06
    • 10 $0.663
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    SQ2389ES-T1_BE3 Digi-Reel 64,804 1
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    SQ2389ES-T1_BE3 Reel 63,000 3,000
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    New Advantage Corporation SQ2389ES-T1_BE3 3,000 1
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    Vishay Intertechnologies SQ2389ES-T1_BE3

    Transistor MOSFET P-Channel 40V 4.1A Automotive 3-Pin SOT-23 - Tape and Reel (Alt: SQ2389ES-T1_BE3)
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    Avnet Americas SQ2389ES-T1_BE3 Reel 6,000 3,000
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    Mouser Electronics SQ2389ES-T1_BE3 539,721
    • 1 $0.57
    • 10 $0.496
    • 100 $0.369
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    Newark SQ2389ES-T1_BE3 Reel 3,000
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    SQ2389ES-T1_BE3 Cut Tape 3,000
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    Vishay Intertechnologies SQ2389ES-T1_GE3

    MOSFETs -40V Vds +/-20V Vgs AEC-Q101 Qualified
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    Mouser Electronics SQ2389ES-T1_GE3 32,123
    • 1 $0.56
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    Verical SQ2389ES-T1_GE3 1,095 27
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    Arrow Electronics SQ2389ES-T1_GE3 Cut Strips 1,095 15 Weeks 1
    • 1 $0.316
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    Newark SQ2389ES-T1_GE3 Cut Tape 7,729 1
    • 1 $0.279
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    Bristol Electronics SQ2389ES-T1_GE3 2,689
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    Quest Components SQ2389ES-T1_GE3 17
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    TME SQ2389ES-T1_GE3 2,936 1
    • 1 $0.798
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    Chip 1 Exchange SQ2389ES-T1_GE3 7,800
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    Vishay BLH SQ2389ES-T1_GE3

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    Bristol Electronics SQ2389ES-T1_GE3 22 9
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    Vishay Intertechnologies SQ2389ES-T1-BE3

    MOSFETs SOT23 P CHAN 40V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI SQ2389ES-T1-BE3 Reel 21,000 3,000
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    SQ2389ES Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SQ2389ES-T1_GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHAN 40V SO23 Original PDF

    SQ2389ES Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SQ2389ES www.vishay.com Vishay Siliconix P-Channel 40 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original
    SQ2389ES 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQ2389ES_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original
    SQ2389ES AN609, 3018u 8484m 2622m 8030m 5907m 4038m 03-Feb-15 PDF

    Untitled

    Abstract: No abstract text available
    Text: SQ2389ES www.vishay.com Vishay Siliconix Automotive P-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET power MOSFET -40 RDS(on) (Ω) at VGS = -10 V 0.094 RDS(on) (Ω) at VGS = -4.5 V 0.188 ID (A) • AEC-Q101 qualified • 100 % Rg and UIS tested


    Original
    SQ2389ES AEC-Q101 OT-23 O-236) SQ2389ES-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF