SRM20W116LLTT2 Search Results

SRM20W116LLTT2 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SRM20W116LLTT2		EPSON	1M-BIT STATIC RAM		Original	PDF
SRM20W116LLTT2		S-MOS Systems	1M-Bit Static RAM		Original	PDF
SRM20W116LLTT2		EPSON	1 M-Bit Static RAM		Scan	PDF

SRM20W116LLTT2 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
PF869-03 Abstract: No abstract text available Text: PF869-03 SRM20W116LLTT2/7 1M-Bit Static RAM ge olta wV r Lo n e p Su eratio Op ducts Pro ● Super Low Voltage Operation and Low Current Consumption ● Access Time 120ns 1.8V / 70ns(2.7V) ● 65,536 Words X16-Bit Asynchtonous ● Wide Temperature Range • DESCRIPTION	Original	PDF	PF869-03 SRM20W116LLTT2/7 120ns X16-Bit SRM20W116LLTT2/7 PF869-03
Untitled Abstract: No abstract text available Text: SRM20W116LLTT2/7 1M-BIT STATIC RAM ● ● ● ● Super Low Voltage Operation and Low Current Consumption Access Time 120ns 1.8V /70ns (2.7V) 65,536 Words x 16-Bit Asynchronous Industrial Temperature Range • DESCRIPTION The SRM20W116LLTT2/7 is a 65,536 words x 16-bit asynchronous, random access memory on a	Original	PDF	SRM20W116LLTT2/7 120ns /70ns 16-Bit SRM20W116LLTT2/7 -44pin-R1 81max 740max)
upd444c Abstract: SRM2016C12 SRM2264LC10 SRM2264lm10 SRM2B256SLMX55 SRM20100LRMT85 SRM2016C-12 SRM2016C SRM2264LCT10 SRM20100LMT Text: 1997 DATABOOK SRAM PRODUCTS 000-97-MEM-1.0 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: 408 922-0200 • Fax: (408) 922-0238 1 THIS PAGE INTENTIONALLY BLANK 2 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: (408) 922-0200 • Fax: (408) 922-0238	Original	PDF	000-97-MEM-1 SRM2016C10/12 16K-Bit SRM2016C/MT12 SRM2264L10/12 64K-Bit -44pin-R1 81max upd444c SRM2016C12 SRM2264LC10 SRM2264lm10 SRM2B256SLMX55 SRM20100LRMT85 SRM2016C-12 SRM2016C SRM2264LCT10 SRM20100LMT
SRM20W116LLTT2 Abstract: SRM20W116LLTT7 Text: EPSON PF869-03 SRM20W116 LLTT2/7 1M-Bit Static RAM • • • • Super Low Voltage Operation and Low Current Consumption Access Time 120ns 1.8V / 70ns(2.7V) 65,536 Words X16-Bit Asynchtonous Wide Temperature Range DESCRIPTION The SRM20W116LLTT2/7 is a 65,536 words x16-bit asynchronous, random access memory on a monolithic	OCR Scan	PDF	PF869-03 SRM20W116LLTT2/7 120ns X16-Bit SRM20W116LLTT2/7 -44pin 740ma> 125toos SRM20W116LLTT2 SRM20W116LLTT7
Untitled Abstract: No abstract text available Text: SRM20W116LLTT2/7 1M-BIT STATIC RAM • • Super Low Voltage Operation and Low Current Consum ption • Access Tim e 120ns 1.8V /70ns (2.7V) • 65,536 W ords x 16-Bit Asynchronous • Industrial Tem perature Range DESCRIPTION The SRM20W 116LLTT2/7 is a 65,536 words x 16-bit asynchronous, random access m em ory on a	OCR Scan	PDF	SRM20W116LLTT2/7 120ns /70ns 16-Bit SRM20W 116LLTT2/7
UPD444C Abstract: SRM2264LC10 hm6116 SRM2264LCT10 Text: Short Form Matrix Static Memory Line-Up The static nature of the memory requires no external clock or refreshing circuit and its very low power consumption makes it ideal for applications requiring non-volatile storage with back-up batteries. S-MOS Systems, Inc. •150 RlverOaks Parkway • San Jose, CA 95134 *Tel: 408 922-0200 • Fax: (408) 922-0238	OCR Scan	PDF	DIP-24pin OP2-24pin DIP-24pln OP-24pin DIP-28pin OP-28pin UPD444C SRM2264LC10 hm6116 SRM2264LCT10
DIP28pin Abstract: sop6 Text: Memories S tatic H A M s CMOS Static RAMs Wide temperature operation: —25 to +85°C P a rt n u m b e r C a p a c ity O ^ a r t a t o n Power s u p p ly (V ) C urre n t consum ption Operating S tandby (mA, Max.) i ^ A , Max.) Am bient te n $ d ra lu re	OCR Scan	PDF	SRM2A256LLMX70 SRM2A256LLMX85 SRM2A256LLMX10 SRM2A1256LLMT DIP-28pin, OP2-28pin, -28pin -28pin-R1 -28pin, DIP28pin sop6
SRM2B256SLMX55 Abstract: SRM2016C Text: Table of Contents Table of Contents SRAM Products Short Form M atrix. 5 SRM2016C10/12.16K-Bit Static RAM. 7 SRM2016C/MT12.16K-Bit Static	OCR Scan	PDF	SRM2016C10/12. 16K-Bit SRM2016C/MT12. SRM2264L10 64K-Bit SRM2264LCT10/12. SRM2B256SLMX55/70/10. 256K-Bit SRM2B256SLMX55 SRM2016C
Untitled Abstract: No abstract text available Text: EPSON PF869-01 SRM20W116 LLTT2/7 1M-Bit Static RAM •S u p e r Low Voltage Operation and Low Current Consumption •A c c e s s Time 120ns 1.8V / 70ns(2.7V) •6 5 ,5 3 6 Words X16-Bit Asynchtonous •W id e Temperature Range I DESCRIPTION The SR M 20W 1 16 LLTT 2/7 is a 65,536 words x16-bit asynchronous, random access memory on a monolithic	OCR Scan	PDF	PF869-01 SRM20W116 120ns X16-Bit SRM20W116LLTT2/7