Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SSM03N70 Search Results

    SSM03N70 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SSM03N70H,J N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Dynamic dv/dt rating D Repetitive-avalanche rated Fast switching G Simple drive requirement BVDSS 600V R DS ON 3.6Ω ID 3.3A S Description The SSM03N70H is in the TO-252 package, which is widely preferred for


    Original
    PDF SSM03N70H O-252 SSM03N70J) O-252 O-251

    700v 5A mosfet

    Abstract: marking codes transistors SSs ssm03n70gp-h 03n7
    Text: SSM03N70GP-H N-channel Enhancement-mode Power MOSFET PRODUCT SUMMARY BVDSS 700V R DS ON 4.4Ω ID 2.5A DESCRIPTION The SSM03N70GP-H achieves fast switching performance with low gate charge without a complex drive circuit. It is suitable for high voltage applications such as AC/DC


    Original
    PDF SSM03N70GP-H SSM03N70GP-H O-220 O-220 700v 5A mosfet marking codes transistors SSs 03n7

    Untitled

    Abstract: No abstract text available
    Text: SSM03N70P,R N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Dynamic dv/dt rating BV DSS 600/650/700V D Repetitive-avalanche rated Fast switching G Simple drive requirement R DS ON 3.6Ω ID 3.3A S Description The SSM03N70 series are specially designed as main switching devices for


    Original
    PDF SSM03N70P 600/650/700V SSM03N70 265VAC O-220 O-262

    Untitled

    Abstract: No abstract text available
    Text: SSM03N70F,I N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Dynamic dv/dt rating D Repetitive-avalanche rated Fast switching G Simple drive requirement BVDSS 600/650/700V R DS ON 3.6Ω ID 3.3A S Description The SSM03N70 series are specially designed as main switching devices for universal


    Original
    PDF SSM03N70F 600/650/700V SSM03N70 265VAC O-220FM T0-220CFM O-220CFM SSM03N70I

    N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V

    Abstract: No abstract text available
    Text: SSM03N70GH/GJ N-CHANNEL ENHANCEMENT MODE POWER MOSFET PRODUCT SUMMARY D Repetitive Avalanche Rated Fast Switching Speed Simple Drive Requirement G BVDSS 600V RDS ON 3.6Ω ID 3.3A S DESCRIPTION G D The TO-252 package is universally preferred for all commercialIndustrial surface mount applications and suited for AC/DC converters.


    Original
    PDF SSM03N70GH/GJ O-252 SSM03N70GH/GJ) O-251 10eliness N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS 30V