SSS6N55 Search Results

SSS6N55 Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SSS6N55		Unknown	FET Data Book		Scan	PDF
SSS6N55		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)		Short Form	PDF
SSS6N55		Samsung Electronics	V(ds): 550V I(on): 3.2A N-channel power MOSFET		Scan	PDF
SSS6N55A		Samsung Electronics	N-Channel Power MOSFETS		Scan	PDF

SSS6N55 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SSS6N60 Abstract: ADE 443 TI MOSFET 6n60 6n60 K300 SSS6N55 Text: N-CHANNEL POWER MOSFETS SSS6N55/6N60 FEATU RES • A • • 9 • • • TO-270* Low er Ros com* 1im ffMp ro /Nvo hiAo<4 a i •«eA ru rn••gAgAeAd n eAsAsA inMdrAu••c tiv F es! s w itc h in g tim e s R ugged p o ly s ilic o n g a te c e il s tru c tu re	OCR Scan	PDF	SSS6N55/6N60 O-270* SSS6N5S6N60 SSS6N55 SSS6N60 SSSSN55 SSSSM60 Tc-25-C Tc-25 ADE 443 TI MOSFET 6n60 6n60 K300
IRFS9620 Abstract: IRFS9522 SSS6N60 IRFS820 Text: FUNCTION GUIDE POWER MOSFETs TO-220 FULL PACKAGE N-CHANNEL Continued BVdss(V) ID(onKA) RDS(onXQ) Part Number 2.20 2.50 4.00 4.50 7.00 8.00 4.000 3.000 2.000 1.500 1.100 0.850 IRFS823 IRFS821 IRFS833 IRFS831 IRFS843 IRFS841 500.00 2.20 2.50 4.00 4.50 7.00	OCR Scan	PDF	O-220 IRFS823 IRFS821 IRFS833 IRFS831 IRFS843 IRFS841 IRFS822 IRFS820 IRFS832 IRFS9620 IRFS9522 SSS6N60
ssp12n10 Abstract: SSP6N60 SSS4N60 SSP5N40 SSP3N70A SSP4N45 SSP4N50 SSP4N55 SSP4N60 SSP4N70 Text: - 313 - f £ ít ft ^ ; £ Vd s or Vd g € ]/ V) Vg s (V) ÍS (Ta=25'C) Ig s s Id Pd * /CH * /CH (W) (A) V g s th) Id s s (nA) Vg s (V) (\|í A) Vd s (V) (V) (V) F d s (on) Vd s = Vg s Id <mA) tí (Ta=25°C) Mon) Ciss g fs Coss Crss ft & m n V g s =0 (max)	OCR Scan	PDF	SSP3N70A T0-220 SSP4N45 O-220 SSP4N50 SSP4N55 SSP10N10 ssp12n10 SSP6N60 SSS4N60 SSP5N40 SSP4N60 SSP4N70
SSS6N60 Abstract: n-channel 600 volts 250M SS64N55 SSS6N55 ca8a Text: N-CHANNEL POWER MOSFETS SSS6N60/55 FEATURES T O -2 2 0 F • Lower R ds <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability	OCR Scan	PDF	SSS6N60/55 SSS6N60 SS64N55 to-220 SSS6N55 0RAIN-T040URCE 002047b n-channel 600 volts 250M ca8a
SSS6N60 Abstract: 250M SS64N55 SSS6N55 Text: N-CHANNEL POWER MOSFETS SSS6N60/55 FEATURES • • • • • • • Lower R ds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability	OCR Scan	PDF	SSS6N60/55 SSS6N60 SS64N55 O-220F SSS6N55 250M