STD110 ASIC Search Results

STD110 ASIC Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
DX9773-DLG2A01-A4		Renesas Electronics Corporation	D7Pro Decoder ASIC
DX8773-ELG2A01-A4		Renesas Electronics Corporation	D7Pro Encoder ASIC
DX7753-ULG2B01-A4		Renesas Electronics Corporation	D7Pro Transcoder ASIC
DX0783-ULG2B01-A4		Renesas Electronics Corporation	D7Pro Unified Transcoder/Encoder/Decoder ASIC
DX0793-ELG2B01-A4		Renesas Electronics Corporation	D7Pro Unified Encoder/Decoder ASIC

STD110 ASIC Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
STD110 ASIC		Samsung Electronics	PLL 2013X		Original	PDF
STD110 ASIC		Samsung Electronics	Characteristics		Original	PDF
STD110 ASIC		Samsung Electronics	Book Contents		Original	PDF
STD110 ASIC		Samsung Electronics	About SEC ASIC		Original	PDF
STD110 ASIC		Samsung Electronics	Introduction		Original	PDF

STD110 ASIC Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
PURE SINE WAVE inverter schematic diagram Abstract: sine wave inverter schematic IVT HS 400 inverter PURE SINE WAVE schematic diagram microcontroller 1 phase pure sine wave inverter 1 phase pure sine wave inverter schematic OA32 diode 4558 opamp schematic 13001 TRANSISTOR grid tie inverters circuit diagrams wallace-tree VERILOG Text: Revision History - First Edition: March 1999 - Second Edition: February 2000 • Library name change MDL110 into STD110 • All characteristic values are updated with mass product line characteristics. • Add high density compiled memories to second edition. chapter 5	Original	PDF	MDL110 STD110 PURE SINE WAVE inverter schematic diagram sine wave inverter schematic IVT HS 400 inverter PURE SINE WAVE schematic diagram microcontroller 1 phase pure sine wave inverter 1 phase pure sine wave inverter schematic OA32 diode 4558 opamp schematic 13001 TRANSISTOR grid tie inverters circuit diagrams wallace-tree VERILOG
dl2d Abstract: AO222 AO211 LD1A STD110 Samsung 546 FD2QD2 Text: Revision History - First Edition: March 1999 - Second Edition: February 2000 • Library name change MDL110 into STD110 • All characteristic values are updated with mass product line characteristics. • Add high density compiled memories to second edition. chapter 5	Original	PDF	MDL110 STD110 PLL2013X dl2d AO222 AO211 LD1A STD110 Samsung 546 FD2QD2
inverter PURE SINE WAVE schematic diagram Abstract: sine wave inverter schematic IVT HS 400 PURE SINE WAVE inverter schematic diagram sine wave inverter using pic schematic diagram ac-dc inverter tda 12155 r 4366 1 phase pure sine wave inverter schematic oa31 diode CL-21 capacitor Text: Revision History - First Edition: March 1999 - Second Edition: February 2000 • Library name change MDL110 into STD110 • All characteristic values are updated with mass product line characteristics. • Add high density compiled memories to second edition. chapter 5	Original	PDF	MDL110 STD110 inverter PURE SINE WAVE schematic diagram sine wave inverter schematic IVT HS 400 PURE SINE WAVE inverter schematic diagram sine wave inverter using pic schematic diagram ac-dc inverter tda 12155 r 4366 1 phase pure sine wave inverter schematic oa31 diode CL-21 capacitor
pure sine wave using TL 494 Abstract: verilog code for digital modulation 152935 74950 design pure "sine wave" power inverter KT 839 PH 593 PURE SINE WAVE inverter schematic diagram vhdl coding for analog to digital converter 16C450 Text: Introduction 1 Table of Contents 1.1 Library Description . 1-1 1.2 Features . 1-2	Original	PDF	STD110 pure sine wave using TL 494 verilog code for digital modulation 152935 74950 design pure "sine wave" power inverter KT 839 PH 593 PURE SINE WAVE inverter schematic diagram vhdl coding for analog to digital converter 16C450
20MHZ Abstract: PLL2013X STD110 lf XTAL 20MHz 104 ceramic capacitor samsung electrolytic capacitor Text: PLL 6 Contents PLL2013X . 6-1 PLL2013X General Description Features The PLL2013X is a Phase-Locked Loop PLL Frequency Synthesizer constructed in CMOS on	Original	PDF	PLL2013X PLL2013X 20-170MHz 170MHz STD110 20MHZ STD110 lf XTAL 20MHz 104 ceramic capacitor samsung electrolytic capacitor
DSPG Abstract: Samsung Soc processor STD110 ASIC 16C450 16C550 ARM920T ARM940T IEEE1284 STD110 piler Text: V S MSUNG STD131 ELECTRONICS STD131 Standard Cell 0.18um System-On-Chip ASIC Dec 2000, V2.0 Features 1.8/2.5/3.3V - Leff= 0.15um, Ldrawn = 0.18um Device - Up to 23 million gates - Power dissipation :24nW/MHz 3.3/5.0V - Gate Delay : 48ps @ 1.8V, 1SL Device	Original	PDF	STD131 STD131 24nW/MHz ARM920T/ARM940T, DSPG Samsung Soc processor STD110 ASIC 16C450 16C550 ARM920T ARM940T IEEE1284 STD110 piler
diode b12 Abstract: STD110 Text: Electrical Characteristics 2 Contents DC Electrical Characteristics . 2-1 ELECTRICAL CHARACTERISTICS DC ELECTRICAL CHARACTERISTICS DC ELECTRICAL CHARACTERISTICS VDD = 3.3 ± 0.3V, TA = -40 to 85°C, VEXT = 5 ± 0.25V In case of 5V tolerant	Original	PDF	STD110 diode b12 STD110
samsung service manual Abstract: rm2510 STD110 Text: V SAMSUNG SEC ASIC World Wide Network ELECTRONICS DESIGN CENTERS SSI Samsung Semiconductor Incorporated 3725 North First Street, San Jose, CA95134-1708, U.S.A. TEL 1 -408-544-4545 FAX (1)-408-544-4950 SSINE Samsung Semiconductor, INC. 238 Littleton Road, Suite 201	Original	PDF	CA95134-1708, samsung service manual rm2510 STD110
ARM dual port SRAM compiler Abstract: rm2510 synopsys dc ultra DSPG 16C450 16C550 ARM920T ARM940T IEEE1284 STD110 Text: V S MSUNG STD130 ELECTRONICS STD130 Standard Cell 0.18um System-On-Chip ASIC Dec 2000, V2.0 Features 1.8/2.5/3.3V - Leff= 0.15um, Ldrawn = 0.18um Device - Up to 23 million gates - Power dissipation :24nW/MHz 3.3/5.0V - Gate Delay : 48ps @ 1.8V, 1SL Device	Original	PDF	STD130 STD130 24nW/MHz ARM920T/ARM940T, ARM dual port SRAM compiler rm2510 synopsys dc ultra DSPG 16C450 16C550 ARM920T ARM940T IEEE1284 STD110
20MHZ Abstract: PLL2013X Text: 20MHz ~ 170MHz FSPLL PLL2013X Features General Description The PLL2013X is a Phase-Locked Loop PLL frequency synthesizer constructed in CMOS on single monolithic structure. The PLL macro-functions provide frequency multiplication capabilities. The output clock frequency Fout is related to the input	Original	PDF	20MHz 170MHz PLL2013X PLL2013X 20MHZ VDD25A1 VSS25A1
TAG 8734 Abstract: samsung 922 pinout schematic diagram display samsung transistor equivalent book FOR A 1941 samsung schematics processor samsung inverter board 7429 TTL HERCULES Graphics Controller lem HA 10000 LPG CRT Power Supply Text: Introduction 1 Table of Contents 1.1 Library Description . 1-1 1.2 Features . 1-2	Original	PDF	STD130 TAG 8734 samsung 922 pinout schematic diagram display samsung transistor equivalent book FOR A 1941 samsung schematics processor samsung inverter board 7429 TTL HERCULES Graphics Controller lem HA 10000 LPG CRT Power Supply
top 261 yn Abstract: ARM9TDMI samsung display port verilog code for decimation filter TAG 8952 Bi-Directional P-Channel LPG CRT Power Supply schematic diagram samsung led SK 9080 verilog code for UART with BIST capability Text: Introduction 1 Table of Contents 1.1 Library Description . 1-1 1.2 Features . 1-2	Original	PDF	STD131 top 261 yn ARM9TDMI samsung display port verilog code for decimation filter TAG 8952 Bi-Directional P-Channel LPG CRT Power Supply schematic diagram samsung led SK 9080 verilog code for UART with BIST capability
RISC-Processor s3c2410 Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH	Original	PDF	BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
tl 0741 Abstract: 2062 USB adc 809 lpg 889 TAG 8734 ao21 ND2D2 schematic diagram display samsung TAG 8518 sj 2517 transistor Text: Introduction 1 Table of Contents 1.1 Library Description . 1-1 1.2 Features . 1-2	Original	PDF	STDL130 tl 0741 2062 USB adc 809 lpg 889 TAG 8734 ao21 ND2D2 schematic diagram display samsung TAG 8518 sj 2517 transistor

TDA 3619 Abstract: TDA 9340 Data sheet TDA 3619 tda 2888 0428 ci an 7591 102-060 AN 7591 POWER AMPLIFIER inverter SK 40037 TDA 810 amplifier tda 8841 Text: Revision History - 1’st Edition: October 2000 - 2’nd Edition: April 2003 • Chapter 1: Introduction • Chapter 2: DC Electrical Characteristics Recommended Operating Conditions • Chapter 3: Primitive Cells • Chapter 5: Complied Memories STDL131	Original	PDF	STDL131 TDA 3619 TDA 9340 Data sheet TDA 3619 tda 2888 0428 ci an 7591 102-060 AN 7591 POWER AMPLIFIER inverter SK 40037 TDA 810 amplifier tda 8841
TDA 8369 Abstract: circuit integrate tda 7283 B764E sine wave inverter schematic IVT HS 400 S901E tda 0470 TDA 7277 TDA 9394 tda 7283 CPU 414-2 Processor Module Text: STDM110 0.25µm 2.5V CMOS Standard Cell Library for Pure Logic/MDL Products STDM110 0.25µm 2.5V CMOS Standard Cell Library for Pure Logic/MDL Products Data Book  1999 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior	Original	PDF	STDM110 STDM110 TDA 8369 circuit integrate tda 7283 B764E sine wave inverter schematic IVT HS 400 S901E tda 0470 TDA 7277 TDA 9394 tda 7283 CPU 414-2 Processor Module
TDA 3619 Abstract: Data sheet TDA 3619 TDA 8701 AN star delta FORWARD / REVERSE WIRING CONNECTION tda 9592 OA2222L TDA 810 amplifier sm 4109 TAG 8907 TDA audio power amplifier Text: Revision History Based on Hard Copy . - 1’st Edition(V1.0) : April. 2003 • Chapter 1 : Introduction • Chapter 2 : DC Electrical Characteristics(Recommended Operating Conditions) • Chapter 3 : Primitive Cells • Chapter 5 : Compiled Memories STDL130	Original	PDF	STDL130 TDA 3619 Data sheet TDA 3619 TDA 8701 AN star delta FORWARD / REVERSE WIRING CONNECTION tda 9592 OA2222L TDA 810 amplifier sm 4109 TAG 8907 TDA audio power amplifier