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    marking 53A

    Abstract: diode 53a Dual N-Channel MOSFET SOP8 60V dual N-Channel trench mosfet
    Text: N4900 ST STN4900 Dual N Channel Enhancement Mode MOSFET 5.3A DESCRIPTION The STN4900 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		STN4900 STN4900 marking 53A diode 53a Dual N-Channel MOSFET SOP8 60V dual N-Channel trench mosfet PDF