STP30N05FI Search Results

STP30N05FI Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
STP30N05FI		STMicroelectronics	N - Channel Enhancement Mode Power MOS Transistor		Original	PDF
STP30N05FI		STMicroelectronics	OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN		Original	PDF
STP30N05FI		Toshiba	Power MOSFETs Cross Reference Guide		Original	PDF
STP30N05FI		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF

STP30N05FI Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
STP30N05 Abstract: STP30N05FI Text: STP30N05 STP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP30N05 STP30N05FI • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.05 Ω < 0.05 Ω 30 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	Original	PDF	STP30N05 STP30N05FI 100oC 175oC O-220 ISOWATT220 STP30N05 STP30N05FI
STP30N05 Abstract: STP30N05FI Text: STP30N05 STP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP30N05 STP30N05FI • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.05 Ω < 0.05 Ω 30 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	Original	PDF	STP30N05 STP30N05FI 100oC 175oC O-220 ISOWATT220 STP30N05 STP30N05FI
STP30N05 Abstract: STP30N05FI Text: STP30N05 STP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP30N05 STP30N05FI • ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 50 V 50 V < 0.05 Ω < 0.05 Ω 30 A 19 A TYPICAL RDS(on) = 0.045 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED	Original	PDF	STP30N05 STP30N05FI 100oC 175oC O-220 ISOWATT220 STP30N05 STP30N05FI
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	PDF	2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Untitled Abstract: No abstract text available Text: ¿57 TYP E STP30N05 S TP30N05FI SGS-THOMSON ¡m era « STP30N05 STP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 50 V 50 V < 0.05 Q. < 0.05 Q. 30 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED	OCR Scan	PDF	STP30N05 TP30N05FI STP30N05FI STP30N05/FI ISQWATT220
HI SPEED, HI CURRENT, TO-220, TRANSISTOR Abstract: No abstract text available Text: SGS-THOMSON IIL IIO T *! STP30N05 STP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TP30N 05 S TP30N 05FI V dss RDS on 50 V 50 V 0 .0 5 n 0 .0 5 Q Id ' 30 A 18 A . • . . . . AVALANCHE RU G G EDN ESS TECHNOLOG Y 100% AVALANCHE TESTED	OCR Scan	PDF	STP30N05 STP30N05FI TP30N ATT220 STP30N05/FI HI SPEED, HI CURRENT, TO-220, TRANSISTOR
TDA0161 equivalent Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:	OCR Scan	PDF
TSD45N50V Abstract: TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V Text: SELECTION GUIDE - BY PACKAGE ISOTOP 4 3 ? V BR DSS (V) R DS(on) ( m ax Id (A) Type (12) gis m in (S) Ciss m ax (pF) 7000 7000 7000 8100 18.0 400 310 8.0 8.0 5.0 9.0 9.0 30.0 40.0 400 500 15.0 28.0 8100 12000 * 45.0 45.0 500 500 350 28.0 28.0 28.0 12000	OCR Scan	PDF	STP30N05 BUZ11A STP25N05 BUZ10 STLT29 BUZ71 IRFZ20 BUZ71A STP17N STLT19 TSD45N50V TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V