STP3407
Abstract: STP340 sot-23 P-Channel MOSFET
Text: P Channel Enchancement Mode MOSFET STP3407 -4.1A DESCRIPTION The STP3407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance.
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STP3407
STP3407
OP-23-3L
-30V/-4
52m-ohm
-30V/-3
85m-ohm
on-resis85
OT-23-3L
STP340
sot-23 P-Channel MOSFET
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STP340U
Abstract: thermistor 4k7 ZXLD1360 ZXLD1350 external mosfet application circuit B57621C103J62 ZXLD1360E5TA GRM31CR71H225KA88L Rebel TSOT23-5 ZRA124F01TA
Text: ZXLD1360EV6 ZXLD1360EV6 EVALUATION BOARD USER GUIDE DESCRIPTION The ZXLD1360EV6, Figure 1, is a double sided evaluation board for the ZXLD1360 LED driver with internal switch. The evaluation board is preset to drive a 660mA into a single LED, or an external choice of LEDs. The number of
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ZXLD1360EV6
ZXLD1360EV6
ZXLD1360EV6,
ZXLD1360
660mA
D-81541
STP340U
thermistor 4k7
ZXLD1350 external mosfet application circuit
B57621C103J62
ZXLD1360E5TA
GRM31CR71H225KA88L
Rebel
TSOT23-5
ZRA124F01TA
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A1YA
Abstract: ST3401 STP340 STP3401 sot-23 MARKING CODE 21 rg1014
Text: M ST3401 ST3401M P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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ST3401M
ST3401M
OT-23-3L
-30V/-4
-30V/-3
STP3401M
A1YA
ST3401
STP340
STP3401
sot-23 MARKING CODE 21
rg1014
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Untitled
Abstract: No abstract text available
Text: ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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ST3401M23RG
ST3401M23RG
OT-23-3L
-30V/-4
-30V/-3
STP3401M23RG
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STP3401
Abstract: ST3401 A1YA marking 04 sot-23-3L
Text: ST3401 P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly
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ST3401
ST3401
OT-23-3L
-30V/-4
-30V/-3
-30V/-1
STP3401
A1YA
marking 04 sot-23-3L
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MOSFET P channel SOT-23
Abstract: A1YA MOSFET P-channel SOT-23 32A marking sot-23 MARKING TR SOT23-3 P MOSFET STP3401SRG MOSFET P SOT-23 ST3401SRG mosfet 40a 12v STP340
Text: ST3401SRG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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ST3401SRG
ST3401RSG
OT-23
-30V/-4
-30V/-3
STP3401SRG
OT-23
MOSFET P channel SOT-23
A1YA
MOSFET P-channel SOT-23
32A marking sot-23
MARKING TR SOT23-3 P MOSFET
MOSFET P SOT-23
ST3401SRG
mosfet 40a 12v
STP340
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Untitled
Abstract: No abstract text available
Text: ST3401SRG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401RSG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
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ST3401SRG
ST3401RSG
OT-23
-30V/-4
-30V/-3
STP3401SRG
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