Stanson Technology
Abstract: TH 9437 P channel MOSFET 1A MOSFET 30v sop-8
Text: P943 7 ST STP 9437 P Channel Enhancement Mode MOSFET - 5.7A DESCRIPTION STP9437 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
|
Original
|
STP9437
STP9437
-30V/-5
-30V/-4
Stanson Technology
TH 9437
P channel MOSFET 1A
MOSFET 30v sop-8
|
PDF
|
st9435
Abstract: STP9435 stp943 marking code 8P
Text: STP9435 P Channel Enhancement Mode MOSFET - 5.6A DESCRIPTION ST9435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
|
Original
|
STP9435
ST9435
-30V/-5
-30V/-4
STP9435
stp943
marking code 8P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STP9435 P Channel Enhancement Mode MOSFET - 5.0A DESCRIPTION STP9435 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are
|
Original
|
STP9435
STP9435
-30V/-5
-30V/-4
|
PDF
|
9434
Abstract: STP9434 SOP8 Package 5262m
Text: 9434 STP STP9434 P Channel Enhancement Mode MOSFET - 7.2A DESCRIPTION STP9434 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly
|
Original
|
STP9434
STP9434
-20V/-7
-20V/-5
-20V/-3
9434
SOP8 Package
5262m
|
PDF
|