SU 179 TRANSISTOR Search Results

SU 179 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

SU 179 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
SU 179 transistor Abstract: SU 179 Text: MOTOROLA O rder this docum ent by M RF275L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF275L RF Power F ield -E ffect Transistor N-Channel Enhancement-Mode 1 0 0 W , 28 V, 500 MHz N -C H A N N E L BROADBAND RF POW ER FET Designed for broadband commercial and military applications using single	OCR Scan	RF275L/D SU 179 transistor SU 179	PDF
Mosfet J49 Abstract: MRF171A equivalent SU 179 transistor motorola MRF171a PF 0849 B Nippon capacitors motorola transistor 912 Text: MOTOROLA Order this document by MRF171A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF171A RF Power Field -E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages from 30-200 MHz. •	OCR Scan	MRF171A/D MRF171A Mosfet J49 MRF171A equivalent SU 179 transistor motorola MRF171a PF 0849 B Nippon capacitors motorola transistor 912	PDF
L9181 Abstract: l6262 Nippon capacitors L 0946 Text: MOTOROLA O rder this docum ent by M RF275G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field-Effect Transistor N-Channel Enhancement-Mode Designed primarily for wideband large-signal output and driver stages from 1 0 0 - 5 0 0 MHz. • Guaranteed Performance @ 500 MHz, 28 Vdc	OCR Scan	RF275G/D L9181 l6262 Nippon capacitors L 0946	PDF
SU 179 transistor Abstract: No abstract text available Text: MOTOROLA O rder this docum ent by M RF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N-Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N -C H A N N E L BROADBAND RF POW ER M OSFET Designed for broadband commercial and military applications up to 200 MHz	OCR Scan	RF173/D SU 179 transistor	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF177/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF177 RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFET 100W , 28 V, 400 MHz N-CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 400 MHz	OCR Scan	MRF177/D	PDF
SU 179 transistor Abstract: Motorola ic 1036 Nippon capacitors Text: MOTOROLA O rder this docum ent by M RF141G/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF141G N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this	OCR Scan	RF141G/D SU 179 transistor Motorola ic 1036 Nippon capacitors	PDF
MRF141 Abstract: Nippon capacitors Text: MOTOROLA O rder this docum ent by M RF141/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF141 N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this	OCR Scan	RF141/D MRF141 Nippon capacitors	PDF
IN5343 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF166W/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line Power Field Effect Transistor N-Channel Enhancement-Mode MOSFET Designed primarily for wideband large-signal output and driver stages to 500 MHz. • P ush-P ull Configuration Reduces Even Numbered Harmonics	OCR Scan	MRF166W/D IN5343	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA O rder this docum ent by M RF182/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF182 MRF182S, R1 N-Channel Enhancement-Mode Lateral MOSFETs • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz	OCR Scan	RF182/D MRF182S MRF182 MRF182S,	PDF
of all 74 ic series Abstract: 2SC3140 2SC3139 NEL080525-28 NEL0800 NEL080120-28 NEL080220-28 J279 J430 j6925 Text: N E C / CALIFORNIA NEC SbE 3> • b457Mm Q0QES43 213 *NECC NEL080120-28 NEL080220-28 NEL080525-28 CLASS A, 860 MHz, 24 VOLT POWER TRANSISTOR ABSOLU TE MAXIMUM RATING S FEATURES SYM BOLS • H IGH LIN EA R P O W E R PARAM ETERS Ta = 25°C UNITS R A TIN G S	OCR Scan	Q0QES43 NEL080120-28 NEL080220-28 NEL080525-28 NEL0801 NEL0802 NEL0805: NEL0800 to1000 bMS74m of all 74 ic series 2SC3140 2SC3139 NEL080525-28 J279 J430 j6925	PDF
vk200 choke Abstract: MRF140 motorola MRF140 511 MOSFET TRANSISTOR motorola 2204B J101 VK200-4B MRF140 equivalent Nippon capacitors Text: MOTOROLA O rder this docum ent by M RF140/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF140 N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics	OCR Scan	MRF140/D MRF140 vk200 choke MRF140 motorola MRF140 511 MOSFET TRANSISTOR motorola 2204B J101 VK200-4B MRF140 equivalent Nippon capacitors	PDF
ne46134 Abstract: NE46134 equivalent ne461 Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER FEATURES_ • HIGH DYNAMIC RANGE . LOW IM DISTORTION: -40 dBc • HIGH OUTPUT POWER : 27.5 dBm at TYP . LOW NOISE: 1.5 dB TYP at 500 MHz	OCR Scan	NE46100 NE46134 NE46134 NE461 7100D -12S2L OT-89) NE46134 equivalent	PDF
CT 1975 sam Abstract: transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking Text: DATA SHEET SILICON TRANSISTOR 2SC4570 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION T h e 2S C 4 5 7 0 is a low su p p ly vo lta g e tra n sisto r de sig n e d for UHF PACKAGE DIMENSIONS Units: mm O S C /M IX . 2.1 ±0.1 It is su ita b le fo r a high d e n sity surface m ount asse m bly sin ce the	OCR Scan	2SC4570 2SC4570-T1 CT 1975 sam transistor NEC D 588 NEC 2561 LE 401 zo 607 p 408 NEC 2561 de nec 2561 Q 634 date sheet ic 7483 C4570 CT 1975 - sam T72 marking	PDF
zt113 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF183 MRF183S N-Channe! Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen cies to 1.0 GHz, The high gain and broadband performance of these devices	OCR Scan	MRF183 MRF183S MRF183S zt113	PDF

zt12-9 Abstract: zt129 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF182 MRF182S N-Channel Enhancement-Mode Lateral MOSFETs • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common	OCR Scan	MRF182 MRF182S ts22l RF182S zt12-9 zt129	PDF
Transistoren DDR Abstract: vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369 Text: VT FUNKAMATEUR-Bauelementeinformation Vergleichsliste für Transistoren DDR/international DDR-Typ Vergleichstyp Beschreibung Hinweise SC 237/238/239 SC 307/308/309 SCE 237 SD 335/337/339 BC 237/238/239 BC 307/308/309 BC 847 BCW 71/72 BCX 70 BC 848 BCW 31/32/33/60	OCR Scan	SCE237 SCE238 SCE239 SCE308 Transistoren DDR vergleichsliste TELEFUNKEN bux 127 aktive elektronische bauelemente ddr BUX 127 SF 127 vergleichsliste DDR "vergleichsliste" bauelemente DDR sf 369	PDF
2SC1600 Abstract: NE57510 NE57500 ne575 2SC1042 2SC1642 NE57520 321E S21E 2SC164 Text: NEC/ CALIFORNIA NEC SbE D b4S7414 00053^^ 4TS * N E C C T ^ - o s NE57500 NE57510 NE57520 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • HIGH OSCILLATOR POWER OUTPUT: 700 m W at 1.7 GHz The NE575 series of NPN silicon medium power transistors is	OCR Scan	b4S7414 NE57500 NE57510 NE57520 NE575 2SC1600 2SC1042 2SC1642 NE57520 321E S21E 2SC164	PDF
Motorola MRF183 Abstract: GS -L Capacitor Text: MOTOROLA O rder this docum ent by M RF183/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF183 MRF183S, R1 N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequen	OCR Scan	RF183/D MRF183/D Motorola MRF183 GS -L Capacitor	PDF
Nippon capacitors Abstract: No abstract text available Text: MOTOROLA O rder this docum ent by M RF140/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field -E ffect Transistor MRF140 N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics	OCR Scan	RF140/D MRF140 Nippon capacitors	PDF
SU 179 transistor Abstract: transistors equivalent 0912 bd135 equivalent IrL 1540 N 1000 watts class d amplifier schematic bd136 equivalent IrL 1540 g RF NPN POWER TRANSISTOR 3 GHZ 200 watts Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub-Micron Bipolar Line M RF15060 M RF15060S RF Pow er Bipolar Transistors Designed for broadband commercial and industrial applications at frequen cies from 1400 to 1600 MHz. The high gain and broadband performance of	OCR Scan	IS12I IS22I MRF15060 MRF15060S SU 179 transistor transistors equivalent 0912 bd135 equivalent IrL 1540 N 1000 watts class d amplifier schematic bd136 equivalent IrL 1540 g RF NPN POWER TRANSISTOR 3 GHZ 200 watts	PDF
Untitled Abstract: No abstract text available Text: • rrr 7 ^ 5 3 7 005536^ 3 ■ ^ T - 3 3 - 0 ° l_ sg s-th o m so n b d i 75/77/79 ^ 7# B P 17 6 /78/80 S 6 S-TH0MS0N 30E D MEDIUM POWER LINEAR AND SW ITCHING APPLICATIONS D E S C R IP T IO N The BD175, BD177 and BD179 are silicon epitaxialbase NPN power transistors in Jedec TO-126 plas	OCR Scan	BD175, BD177 BD179 O-126 BD176, BD178 BD180. BD175 BD176 BD177	PDF
PT 2102 ic Abstract: HXTR-41Q1 HXTR-4101TXV 2N6679 HPAC-70GT HXTR-2101 HXTR-4101 hxtr-6105 6105tx BV EI 302 2003 Text: H E W L E T T - P A C K A R D n CMPNTS EOE D £3 44475Û4 m General Purpose Transistors HXTR-2001 Chip Technical Data Features ^ k laert ; LJ Generic Chip HXTR-2001 Recommended Die Attach and Bonding Procedures Eutectic Die Attach at a stage temperature of 410 ± 10°C under	OCR Scan	HXTR-2001 2N6679, HXTR-2101, HXTR-2102, HXTR-4101, HXTR-6105, HXTR-6106, HXTR-6106 MIL-S-19500, PT 2102 ic HXTR-41Q1 HXTR-4101TXV 2N6679 HPAC-70GT HXTR-2101 HXTR-4101 hxtr-6105 6105tx BV EI 302 2003	PDF
ARLON-GX-0300 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field E ffect Transistors N-Channel Enhancement-Mode Lateral MOSFETs • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common	OCR Scan	Charact13 MRF182 ARLON-GX-0300	PDF
2SC3140 Abstract: L0801 Text: CLASS A, 860 MHz, 24 VOLT POWER TRANSISTOR NEL080120-28 NEL080220-28 NEL080525-28 NOT RECOMMENDED FOR NEW DESIGN FEATURES DESCRIPTION HIGH LIN EA R PO W ER NEC's N EL0800 series of NPN epitaxial UHF pow er transis tors is designed fo r linear operation in the 500 to 1000 MHz	OCR Scan	L0801: NEL0802: NEL0805: NEL080120-28 NEL080220-28 NEL080525-28 EL0800 d-179 2SC3140 L0801	PDF

SU 179 TRANSISTOR Search Results

SU 179 TRANSISTOR Result Highlights (5)

SU 179 TRANSISTOR Datasheets Context Search

SU 179 transistor

Mosfet J49

L9181

SU 179 transistor

Untitled

SU 179 transistor

MRF141

IN5343

Untitled

of all 74 ic series

vk200 choke

ne46134

CT 1975 sam

zt113

zt12-9

Transistoren DDR

2SC1600

Motorola MRF183

Nippon capacitors

SU 179 transistor

Untitled

PT 2102 ic

ARLON-GX-0300

2SC3140